FEATURES
High Voltage Operation (VDS=28V) GaAs FET
High Gain: 15.5dB(typ.) at Pout=41.8dBm(Avg.)
Broad Frequency Range : 2110 to 2170MHz
High Reliability
DESCRIPTION
The FLL21E060IY is a high power GaAs FET that offers high efficiency,
ease of matching, greater consistency and broad bandwidth for high
power L-band amplifiers. This device is targeted for high voltage, low
current operation in digitally modulated base station amplifiers. This
product is ideally suited for W-CDMA and Multi-carrier PCS base station
amplifiers while offering high gain, long term reliability and ease of use.
Edition 1.1
June 2004
1
FLL21E060IY
L,S-band High Power GaAs FET
ABSOLUTE MAXIMUM RATING
Item
Symbol
Condition
Unit
Drain-Source Voltage
V
DS
V
Gate-Source Voltage
V
GS
V
Total Power Dissipation
P
T
W
Storage Temperature
T
stg
-
o
C
Channel Temperature
T
ch
-
o
C
RECOMMENDED OPERATING CONDITION (Case Temperature Tc=25
o
C)
Item
Symbol
Condition
Unit
DC Input Voltage
V
DS
V
Forward Gate Current
I
GF
R
G
=2
mA
Reverse Gate Current
I
GR
R
G
=2
mA
Channel Temperature
T
ch
o
C
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25
o
C)
Min.
Typ.
Max.
Pinch-Off Voltage
V
P
V
DS
=5V I
DS
=94.3mA
-0.1
-0.2
-0.5
V
Gate-Source Breakdown Voltage
V
GSO
I
GS
=-943uA
-5
-
-
V
3rd Order Intermodulation Distortion
IM
3
-
-33
-31
dBc
Power Gain
G
P
14.5
15.5
-
dB
Drain Efficiency
D
-
26
-
%
Adjacent Channel Leakage Power Ratio
ACLR
-
-35
-
dBc
Themal Resistance
R
th
Channel to Case
-
1.5
1.7
o
C/W
Note 1 : IM
3
, ACLR and Gain test conditions as follows
IM
3
& Gain : f
0
=2.1325GHz, f
1
=2.1475GHz W-CDMA(3GPP3.4 12-0) BS-1 64ch non clipping modulation measured over 3.84MHz at f
0
-15MHz and f
1
+15MHz.
ACLR : f
0
=2.1325GHz W-CDMA (3GPP3.4 12-00) BS-1 64ch non clipping modulation, measured over 3.84MHz at f
0
+/-5MHz
ESD
Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.5k)
CASE STYLE : IY
CLASS III
2000V ~
T
C
=25
o
C
(Case Temperature)
Rating
32
-3
102
Limit
155
65 to +175
200
<28
<113.6
>-22.1
V
DS
=28V
I
DS
(DC)=630mA
P
out
=41.8dBm(Avg.)
Note 1
Unit
Item
Symbol
Condition
Limit
2
Output Power & Drain Efficiency vs. Input Power
V
DS
=28V, I
DS
=630mA, f=2.14GHz
Output Power vs. Frequency
V
DS
=28V, I
DS
=630mA
FLL21E060IY
L,S-band High Power GaAs FET
Two-Carrier IMD(ACLR) vs. Output Power
V
DS
=28V I
DS
=630mA f
0
=2.135, f
1
=2.145GHz
W-CDMA 3-GPP BS-1 64ch Modulation
26
28
30
32
34
36
38
40
42
44
46
48
50
2.04 2.06 2.08
2.1
2.12 2.14 2.16 2.18
2.2
Frequency [GHz]
Ou
t
p
u
t
P
o
we
r
[
d
B
m
]
Pin=15dBm
Pin=20dBm
Pin=25dBm
Pin=30dBm
Pin=35dBm
30
32
34
36
38
40
42
44
46
48
50
15 17 19 21 23 25 27 29 31 33 35 37
Input Pow er[dBm ]
O
u
tput
P
o
w
e
r
[
dB
m]
0
10
20
30
40
50
60
70
80
90
100
D
r
ain
E
f
f
i
ci
en
cy[
%
]
d
P out
-60
-55
-50
-45
-40
-35
-30
-25
24 26 28 30 32 34 36 38 40 42 44 46 48
Output Power[dBm]
IM
D
[
d
B
c
]
0
5
10
15
20
25
30
35
D
r
ai
n
E
f
f
i
ci
e
n
cy
[
%
]
IM3L
IM5L
Drain Efficiency
Single-Carrier ACLR vs. Output Power
V
DS
=28V I
DS
=630mA fo=2.1325GHz
W-CDMA 3GPP BS-1 64ch Modulation
-65
-60
-55
-50
-45
-40
-35
-30
24 26 28 30 32 34 36 38 40 42 44 46 48
Output Power[dBm]
AC
L
R
[
d
B
c
]
0
5
10
15
20
25
30
35
D
r
ai
n
E
f
f
i
ci
en
cy[
%
]
+/-5MHz
+/-10MHz
Drain Efficiency
FLL21E060IY
L,S-band High Power GaAs FET
3
Board Layout
Circuit Diagram of the Board
V
GS
V
DS
C1
C2
C5
C8
C6
C7
L1
C9
C10x5
R1
C12
C11
C13
C14
C15
R2
C16
C17
C18
C19
C4
C3
r=3.5 t=0.8mm
Z1, Z12 9.00mm x 1.78mm Transmission Line
Z2 16.3mm x 1.78mm Transmission Line
Z3 7.00mm x 1.78mm Transmission Line
Z4 6.00mm x 13.0mm Transmission Line
Z5 3.50mm x 0.50mm Transmission Line
Z6 6.00mm x 13.0mm Transmission Line
Z7 23.0mm x 0.50mm Transmission Line
Z8 6.00mm x 25.0mm Transmission Line
Z9 23.0mm x 1.50mm Transmission Line
Z10 9.50mm x 13.0mm Transmission Line
Z11 23.3mm x 1.78mm Transmission Line
C1,C2 10pF
C3,C7 1.0pF
C4,C6 0.75pF
C5,C9 1.5pF
C8 0.5pF
C10 0.1uF
C11,C16 20pF
C12,C17 100nF
C13,C18 1000pF
C14,C15 10uF
C18 22uF
L1 3.3nF
R1 2.0ohm
R2 51ohm
Board
input size
r=3.5 t=0.8mm
50mm x 50mm
output size
r=3.5 t=0.8mm
50mm x 50mm
Z1
Z2
Z3
Z4
Z5 Z6
Z7
C15C14
Z8
Z9
Z10
Z11
Z12
C1
C2
C3
C4
C5
C6 C7C8
C9
L1
C10x5
C11
C12
C13
C16C17C18C19
R2
R1
FLL21E060IY
L,S-band High Power GaAs FET
4
S-Parameters @ V
DS
=28V, I
DS
=630mA, f=1.0 to 3.0 GHz
S 11
S 22
2.0G H z
2.1
2.0G H z
25
2.2
2.2
2.1
0
+10j
+25j
+50j
+100j
+250j
-10j
-25j
-50j
-100j
-250j
10
S 12
S 21
0.4
0.2
8
180
0
-90
+90
Scale for |S
21
|
S
c
al
e f
o
r
|
S
12
|
2.0GHz
4
2.2
2.1
2.0GHz
2.1
2.2
[GHz]
S11(mag) S11(ang)
S21(mag) S21(ang)
S12(mag) S12(ang)
S22(mag) S22(ang)
1
0.961
-176.42
0.480
4.24
0.002
70.01
0.933
-173.72
1.1
0.957
-176.29
0.468
-0.94
0.003
71.76
0.935
-174.51
1.2
0.953
-176.44
0.479
-5.13
0.003
69.92
0.930
-175.43
1.3
0.949
-176.61
0.512
-10.30
0.005
75.49
0.932
-176.11
1.4
0.943
-177.14
0.571
-16.29
0.005
71.35
0.928
-177.11
1.5
0.933
-178.20
0.665
-22.90
0.007
66.87
0.915
-177.79
1.6
0.911
-179.23
0.830
-31.26
0.009
58.53
0.908
-179.13
1.7
0.881
179.01
1.091
-42.42
0.011
49.89
0.885
178.94
1.8
0.833
177.08
1.532
-57.22
0.015
36.71
0.850
177.15
1.9
0.749
174.48
2.331
-78.13
0.022
17.53
0.829
173.66
2
0.609
171.95
3.889
-108.90
0.034
-13.62
0.815
163.99
2.1
0.263
-172.76
6.931
-165.59
0.052
-71.77
0.654
113.03
2.11
0.242
-156.52
7.194
-174.60
0.053
-80.54
0.599
100.93
2.12
0.252
-140.46
7.389
176.42
0.053
-89.96
0.541
86.80
2.13
0.306
-126.52
7.360
166.64
0.052
-99.95
0.478
69.57
2.14
0.378
-120.67
7.291
156.88
0.051
-110.43
0.419
48.81
2.15
0.457
-119.30
7.041
146.98
0.048
-119.43
0.382
25.67
2.16
0.531
-120.31
6.706
137.94
0.044
-129.46
0.373
1.34
2.17
0.596
-122.55
6.274
129.48
0.041
-137.37
0.388
-20.78
2.18
0.645
-124.52
5.836
121.87
0.037
-146.92
0.421
-39.36
2.19
0.696
-127.28
5.392
114.90
0.035
-152.94
0.461
-53.66
2.2
0.730
-130.24
4.968
108.68
0.030
-159.30
0.503
-65.54
2.3
0.859
-143.77
2.285
69.86
0.012
156.65
0.754
-113.65
2.4
0.894
-148.81
1.271
50.96
0.006
130.95
0.838
-127.60
2.5
0.916
-151.41
0.835
38.99
0.002
108.48
0.884
-134.62
2.6
0.923
-153.20
0.595
29.68
0.001
102.28
0.905
-138.74
2.7
0.927
-154.54
0.459
22.97
0.001
157.08
0.918
-141.00
2.8
0.936
-155.53
0.384
16.60
0.002
118.47
0.925
-143.07
2.9
0.932
-157.09
0.332
11.02
0.003
119.75
0.925
-145.09
3
0.928
-158.33
0.311
6.31
0.003
121.74
0.918
-146.72
FLL21E060IY
L,S-band High Power GaAs FET
5
IY Package Outline
Unit : mm
9.779
34.036
12.7
4.826
4.826
9.98
R1.524
3.251
29.50
1.575
0.152
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