X-Band Internally Matched FET
FEATURES
High Output Power: P1dB=40.5dBm(Typ.)
High Gain: G1dB=7.0dB(Typ.)
High PAE:
add=25%(Typ.)
Broad Band: 9.5~10.5GHz
Impedance Matched Zin/Zout = 50
Hermetically Sealed Package
ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25
C)
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25
C)
CASE STYLE: IB
Edition 1.2
September 2004
1
FLM0910-12F
Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.5k
)
Item
Symbol
Rating
Unit
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
V
DS
V
GS
PTot
T
stg
15
-5
57.6
-65 to +175
V
V
W
o
C
Channel Temperature
T
ch
175
o
C
Power Gain at 1dB G.C.P.
Limit
Item
Symbol
Test Conditions
Unit
Drain Current
Output Power at 1dB G.C.P.
Gain Flatness
I
DSS
P
1dB
G
A
V
dB
dBm
Min.
Typ.
Max.
Drain Current
I
dsr
mS
V
A
-
5000 -
-0.5 -1.5 -3.0
-5.0 -
-
39.5 40.5 -
6.0 7.0 -
-
3.5 4.5
V
DS
=10V
f=9.5 - 10.5 GHz
I
DS
=0.5Idss (typ.)
Zs=Z
L
=50
Power-added Efficiency
add
%
-
25 -
-
-
1.2
-
6.0 9.0
V
DS
=5V, V
GS
=0V
Transconductance
g
m
V
DS
=5V, I
DS
=3.6A
Pinch-off Voltage
V
p
V
DS
=5V, I
DS
=300mA
Gate-Source Breakdown Voltage
V
GSO
I
GS
=-340uA
G
1dB
dB
Thermal Resistance
R
th
Channel to Case
-
2.3 2.6
o
C/W
Channel Temperature Rise
T
ch
10V X Idsr X Rth
-
-
80
o
C
DESCRIPTION
The FLM0910-12F is a power GaAs FET that is internally matched
for standard communication and radar bands to provide optimum
power and gain in a 50
system.
RECOMMENDED OPERATING CONDITION (Case Temperature Tc=25
C)
Item
Symbol
Condition
Unit
DC Input Voltage
Gate Current
V
DS
I
GS
10
32.0
V
mA
Limit
R
G
=50
Gate Current
I
GR
R
G
=50
-5.6
mA
G.C.P.:Gain Compression Point, S.C.L.:Single Carrier Level
Note:RF-Test is measured with Vgs-Constant Circuit.
ESD
Class
2000V~
FLM0910-12F
X-Band Internally Matched FET
2
OUTPUT POWER , POWER ADDED EFFICIENCY
vs. INPUT POWER
OUTPUT POWER vs. INPUT POWER
POWER DERATING CURVE
Vds=10V, Ids=0.5IDSS
28
30
32
34
36
38
40
42
20
22
24
26
28
30
32
34
36
Input power [dBm]
Output
po
w
e
r
[dBm]
0
10
20
30
40
50
60
70
Po
w
e
r
A
d
d
e
d
Efficien
cy
[
%
}
Vds=10V, Ids=0.5IDSS
28
30
32
34
36
38
40
42
9
9.5
10
10.5
11
Input power[dBm]
Output
po
w
e
r
[dBm]
P1dB
Pin=22dBm
Pin=
26dBm
Pin=30dBm
Pin=33dBm
Pin=35dBm
0
10
20
30
40
50
60
0
50
100
150
200
Case Temperature [degree C]
Total
Power Di
ssi
pati
on [W]
Pout
P.A.E.
FLM0910-12F
X-Band Internally Matched FET
5
For further information please contact :
Eudyna Devices USA Inc.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
TEL: (408) 232-9500
FAX: (408) 428-9111
www.us.eudyna.com
Eudyna Devices Europe Ltd.
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
United Kingdom
TEL: +44 (0) 1628 504800
FAX: +44 (0) 1628 504888
CAUTION
Eudyna Devices Inc. products contain gallium arsenide
(GaAs) which can be hazardous to the human body and the
environment. For safety, observe the following procedures:
Do not put these products into the mouth.
Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-
products are dangerous to the human body if inhaled, ingested, or
swallowed.
Observe government laws and company regulations when
discarding this product. This product must be discarded in
accordance with methods specified by applicable hazardous waste
procedures.
Eudyna Devices Asia Pte. Ltd.
Hong Kong Branch
Rm.1101,Ocean Centre, 5 Canton Road
Tsim Sha Tsui, Kowloon, Hong Kong
TEL: +852-2377-0227
FAX: +852-2377-3921
Eudyna Devices Inc.
1000 Kamisukiahara, showa-cho
Nakakomagun, Yamanashi
409-3883, Japan
(Kokubo Industrial Park)
TEL +81-55-275-4411
FAX +81-55-275-9461
Sales Division
1, Kanai-cho, Sakae-ku
Yokohama,244-0845,Japan
TEL +81-45-853-8156
FAX +81-45-853-8170
Eudyna Devices Inc. reserves the right to change products and
specifications without notice.The information does not convey any
license under rights of Eudyna Devices Inc. or others.
2004 Eudyna Devices USA Inc.
Printed in U.S.A.
PDF 
ZIP
