Edition 1.2
September 2004
1
Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.5kW)
ESD
Class III
2000V
~
X,Ku-Band Internally Matched FET
FEATURES
High Output Power: P1dB=43.0dBm(Typ.)
High Gain: G1dB=7.0dB(Typ.)
High PAE: add=27%(Typ.)
Broad Band: 10.711.7GHz
Impedance Matched Zin/Zout = 50
Hermetically Sealed Package
DESCRIPTION
The FLM1011-20F is a power GaAs FET that is internally matched
for standard communication bands to provide optimum power and
gain in a 50
system.
ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25
C)
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25
C)
RECOMMENDED OPERATING CONDITION(Case Temperature Tc=25
C)
FLM1011-20F
Item
Symbol
Condition
Unit
DC Input Voltage
Forward Gate Current
V
DS
I
GF
10
64
V
mA
Limit
R
G
=25
Reverse Gate Current
I
GR
R
G
=25
-11.2
mA
CASE STYLE: IK
G.C.P.:Gain Compression Point, S.C.L.:Single Carrier Level
Item
Symbol
Rating
Unit
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
V
DS
V
GS
P
T
T
stg
15
-5
93.7
-65 to +175
V
V
W
o
C
Channel Temperature
T
ch
175
o
C
Power Gain at 1dB G.C.P.
Limit
Item
Symbol
Test Conditions
Unit
Drain Current
Output Power at 1dB G.C.P.
Gain Flatness
I
DSS
P
1dB
G
A
V
dB
dBm
Min.
Typ.
Max.
Drain Current
I
dsr
S
V
A
-
10 -
-0.5 -1.5 -3.0
-5.0 -
-
42 43 -
6.0 7.0 -
-
6.0 7.2
V
DS
=10V
f=10.7 - 11.7 GHz
I
DS
=0.60I
DSS
(typ)
Zs=Z
L
=50
Power-added Efficiency
add
%
-
27 -
-
-
1.2
-
10.8 16.2
V
DS
=5V, V
GS
=0V
Transconductance
g
m
V
DS
=5V, I
DS
=6480mA
Pinch-off Voltage
V
p
V
DS
=5V, I
DS
=600mA
Gate-Source Breakdown Voltage
V
GSO
I
GS
=-600
A
G
1dB
dB
3rd Order Intermodulation
Distortion
IM
3
f= 11.7 GHz
f=10MHz, 2-tone Test
Pout=31.0dBm (S.C.L.)
Thermal Resistance
-42.0 -45.0 -
dBc
R
th
Channel to Case
-
1.4 1.6
o
C /W
Channel Temperature Rise
T
ch
10V x Idsr X Rth
-
-
100
o
C
FLM1011-20F
X-Band Internally Matched FET
2
POWER DERATING CURVE
0
10
20
30
40
50
60
70
80
90
100
0
50
100
150
200
Case Temperature [oC]
T
o
t
a
l
P
o
we
r
Di
ssa
p
a
t
i
o
n [
W
]
Out Power & P.A.E. vs. Input Power
VDS=10V, IDS(DC)=6A,f=11.2GHz
32
34
36
38
40
42
44
46
24
26
28
30
32
34
36
38
40
Input Power [dBm]
O
u
tp
u
t
P
o
w
e
r
[d
Bm]
0
10
20
30
40
50
60
70
Po
w
e
r
A
d
d
e
d
E
f
f
i
ci
en
cy
[%]
Output Power
P.A.E.
Output Power vs. Frequency
VDS=10V, IDS(DC)=6A
38
39
40
41
42
43
44
45
10.45
10.7
10.95
11.2
11.45
11.7
11.95
Frequency [GHz]
O
utput P
o
w
e
r
[
d
B
m
]
32dBm
34dBm
36dBm
38dBm
P1dB
IMD vs. Output Power
VDS=10V, IDS(DC)=6A
f1=11.7GHz, f2=11.71GHz
-70
-65
-60
-55
-50
-45
-40
-35
-30
-25
-20
23
25
27
29
31
33
35
37
39
Output Power [dBm]
S.C.L. [Single Carrier Level]
I
M
3 &
5 [
d
B
c
]
IM3
IM5
X-Band Internally Matched FET
FLM1011-20F
5
For further information please contact :
Eudyna Devices USA Inc.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
TEL: (408) 232-9500
FAX: (408) 428-9111
www.us.eudyna.com
Eudyna Devices Europe Ltd.
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
United Kingdom
TEL: +44 (0) 1628 504800
FAX: +44 (0) 1628 504888
CAUTION
Eudyna Devices Inc. products contain gallium arsenide
(GaAs) which can be hazardous to the human body and the
environment. For safety, observe the following procedures:
Do not put these products into the mouth.
Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-
products are dangerous to the human body if inhaled, ingested, or
swallowed.
Observe government laws and company regulations when
discarding this product. This product must be discarded in
accordance with methods specified by applicable hazardous waste
procedures.
Eudyna Devices Asia Pte. Ltd.
Hong Kong Branch
Rm.1101,Ocean Centre, 5 Canton Road
Tsim Sha Tsui, Kowloon, Hong Kong
TEL: +852-2377-0227
FAX: +852-2377-3921
Eudyna Devices Inc.
1000 Kamisukiahara, showa-cho
Nakakomagun, Yamanashi
409-3883, Japan
(Kokubo Industrial Park)
TEL +81-55-275-4411
FAX +81-55-275-9461
Sales Division
1, Kanai-cho, Sakae-ku
Yokohama,244-0845,Japan
TEL +81-45-853-8156
FAX +81-45-853-8170
Eudyna Devices Inc. reserves the right to change products and
specifications without notice.The information does not convey any
license under rights of Eudyna Devices Inc. or others.
2004 Eudyna Devices USA Inc.
Printed in U.S.A.
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