X,Ku-Band Internally Matched FET
FEATURES
High Output Power: P1dB=42.5dBm(Typ.)
High Gain: G1dB=6.0dB(Typ.)
High PAE:
add=27%(Typ.)
Broad Band: 13.75~14.5GHz
Impedance Matched Zin/Zout = 50
Hermetically Sealed Package
Edition 1.1
May 2005
1
FLM1314-18F
DESCRIPTION
The FLM1314-18F is a power GaAs FET that is internally matched
for standard communication bands to provide optimum power and
gain in a 50
system.
ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25
o
C)
Item
Symbol
Unit
Drain-Source Voltage
V
D S
V
Gate-Source Voltage
V
GS
V
Total Power Dissipation
P
T
W
Storage Temperature
T
stg
o
C
Channel Temperature
T
ch
o
C
RECOMMENDED OPERATING CONDITION (Case Temperature Tc=25
o
C)
Item
Symbol
Unit
DC Input Voltage
V
D S
V
Forward Gate Current
I
GF
mA
Reverse Gate Current
I
GR
mA
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25
o
C)
Min.
Typ.
Max.
Drain Current
I
DSS
-
9.3
14
A
Trans conductance
g
m
-
6600
-
mS
Pinch-off Voltage
V
p
-0.5
-1.5
-3.0
V
Gate-Source Breakdown Voltage
V
GSO
-5.0
-
-
V
Output Power at 1dB G.C.P.
P
1dB
42.0
42.5
-
dBm
Power Gain at 1dB G.C.P.
G
1dB
5.0
6.0
-
dB
Drain Current
I
dsr
-
5.0
6.0
A
Power-added Efficiency
N
add
-
27
-
%
Gain Flatness
G
-
-
1.2
dB
3rd Order Intermodulation
Distortion
IM
3
-25
-30
-
dBc
Thermal Resistance
R
th
Channel to Case
-
1.8
2.0
o
C/W
Channel Temperature Rise
T
ch
-
-
100
o
C
CASE STYLE : IB
G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level
ESD
Class III
2000V
~
Note : Based on EIAJ ED-4701 C-111A (C=100pF, R=1.5k
)
I
GS
=-390uA
V
DS
=10V
I
DS
DC=4.0A
f= 13.75
~
14.5 GHz
Zs=Z
L
=50 ohm
10V x I
dsr
X R
th
Unit
V
DS
=5V , V
GS
=0V
V
DS
=5V , I
D S
=4.65A
V
DS
=5V , I
D S
=390mA
f=14.5 GHz
f=10MHz
2-tone Test
Pout=36.0dBm (S.C.L.)
R
G
=25 ohm
-9.6
Item
Symbol
Condition
Limit
10
R
G
=25 ohm
44.6
75
Rating
15
-5
Condition
Limit
-65 to +150
175
-52
-50
-48
-46
-44
-42
-40
-38
-36
-34
-32
-30
-28
-26
-24
-22
30
31
32
33
34
35
36
37
38
Output Power (S.C.L.) [dBm]
Intermodulation Distortion [dBc]
IM3
IM5
FLM1314-18F
X,Ku-Band Internally Matched FET
2
0
20
40
60
80
0
50
100
150
200
Case Temperature [
o
C]
Total Power Dissipation [W]
IMD vs OUTPUT POWER
OUTPUT POWER vs. FREQUENCY
POWER DERATING CURVE
Vds=10V, IdsDC=4.0A
Vds=10V, IdsDC=4.0A
32
34
36
38
40
42
44
13.50
13.75
14.00
14.25
14.50
14.75
Frequency [GHz]
Output Power [dBm]
P1dB
27dBm
31dBm
35dBm
38dBm
f1=14.50GHz, f2=14.51GHz
OUTPUT POWER , POWER ADDED EFFICIENCY
v.s. INPUT POWER
34
35
36
37
38
39
40
41
42
43
44
28
30
32
34
36
38
40
Input Power (dBm)
Output Power (dBm)
0
10
20
30
40
50
60
70
80
90
100
Power Added Efficiency (%)
Pout
PAE
Vds=10V IdsDC=4.0A
Freq=14.125GHz
FLM1314-18F
X,Ku-Band Internally Matched FET
5
For further information please contact :
CAUTION
Eudyna Devices Compound Semiconductor Products contain gallium
arsenide (GaAs) which can be hazardous to the human body and the
environment.
For safety, observe the following procedures:
Do not put these products into the mouth.
Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-
products
are dangerous to the human body if inhaled, ingested, or swallowed.
Observe government laws and company regulations when discarding
this product. This product must be discarded in accordance with
methods specified by applicable hazardous waste procedures.
Eudyna Devices USA Inc.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
Phone: (408) 232-9500
FAX: (408) 428-9111
www.fcsi.fujitsu.com
Eudyna Devices Europe Ltd.
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
Phone: +44 (0) 1628 504800
FAX: +44 (0) 1628 504888
Eudyna Devices Asia Pte. Ltd. Hong Kong Branch
Rm.1101,Ocean Centre, 5 Canton Road, Tsim Sha Tsui Kowloon, Hong kong
Tel: +852-2377-0227
Fax: +852-2377-3921
Eudyna Devices Inc.
1000 Kamisukiahara, showa-cho, Nakakomagun, Yamanashi
409-3883, Japan
(Kokubo Industrial Park)
Tel +81-55-275-4411
Fax +81-55-275-9461
Sales Division
1,Kanai-cho,Sakae-ku,Yokohama,244-0845,Japan
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