FEATURES
High Output Power: P1dB = 44.5dBm (Typ.)
High Gain: G1dB = 10.0dB (Typ.)
High PAE:
add = 37% (Typ.)
Low IM3 = -46dBc@Po = 33.5dBm
Broad Band: 5.9 ~ 6.4GHz
Impedance Matched Zin/Zout = 50
Hermetically Sealed Package
1
Edition 1.3
August 2004
FLM5964-25F
C-Band Internally Matched FET
Item
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
Symbol
VDS
VGS
15
-5
93.7
-65 to +175
175
Tc = 25C
V
V
W
C
C
PT
Tstg
Tch
Condition
Unit
Rating
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25
C)
Eudyna recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 64.0 and -11.2 mA respectively with
gate resistance of 25
.
DESCRIPTION
The FLM5964-25F is a power GaAs FET that is internally matched for
standard communication bands to provide optimum power and gain in a
50 ohm system.
Eudyna's stringent Quality Assurance Program assures the highest
reliability and consistent performance.
Item
Saturated Drain Current
Transconductance
Pinch-off Voltage
Gate Source Breakdown Voltage
Power-added Efficiency
3rd Order Intermodulation
Distortion
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
Symbol
IDSS
-
10
15
-
10
-
-0.5
-1.5
-3.0
-5.0
-
-
9.0
10.0
-
-
37
-
43.5
44.5
-
VDS = 5V, IDS = 500mA
VDS = 5V, IDS = 6.5A
VDS = 5V, VGS = 0V
IGS = -500A
VDS =10V,
IDS = 0.65IDSS (Typ.),
f = 5.9 ~ 6.4 GHz,
ZS=ZL= 50 ohm
f = 6.4 GHz,
f = 10 MHz
2-Tone Test
Pout = 33.5dBm S.C.L.
A
S
V
dB
%
-44
-46
-
dBc
dBm
V
gm
Vp
VGSO
P1dB
G1dB
Drain Current
-
6500
7600
mA
Idsr
IM3
add
Gain Flatness
-
-
0.6
dB
G
Test Conditions
Unit
Limit
Typ.
Max.
Min.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25
C)
Channel to Case
Thermal Resistance
-
1.4
1.6
C/W
Rth
G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level
CASE STYLE: IK
10V x Idsr x Rth
Channel Temperature Rise
-
-
100
C
Tch
2
FLM5964-25F
C-Band Internally Matched FET
POWER DERATING CURVE
40
80
100
60
20
0
50
100
150
200
Case Temperature (
C)
Total Power Dissipation (W)
OUTPUT POWER & IM3 vs. INPUT POWER
VDS=10V
f1 = 6.4 GHz
f2 = 6.41 GHz
2-tone test
14
16
18
20
22
24
Input Power (S.C.L.) (dBm)
S.C.L.: Single Carrier Level
26
28
30
32
36
34
24
22
20
-55
-50
-45
-40
-35
-60
Output Power (S.C.L.) (dBm)
IM3
Pout
IM
3
(dBc)
OUTPUT POWER vs. FREQUENCY
Pin=34.0dBm
26.0dBm
28.0dBm
30.0dBm
32.0dBm
5.9
6.0
6.1
6.2
6.3
6.4
Frequency (GHz)
41
40
39
38
37
42
43
44
45
Output Power (dBm)
VDS=10V
P1dB
OUTPUT POWER vs. INPUT POWER
VDS=10V
f = 6.15 GHz
26
24
28
30
32
34
36
Input Power (dBm)
36
38
40
42
44
46
20
10
30
40
Output Power (dBm)
add
Pout
add
(%)
3
FLM5964-25F
C-Band Internally Matched FET
S-PARAMETERS
VDS = 10V, IDS = 6500mA
FREQUENCY
S11
S21
S12
S22
(MHZ)
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
5700
.428 104.1 4.249
-89.0 .085 -144.0 .335 79.6
5800
.369 81.2
4.311
-107.4 .090
-162.3 .356 59.2
5900
.311 55.2
4.347
-126.1 .096
179.4 .371 38.7
6000
.261 24.5
4.354
-144.9 .099
161.1 .378 18.6
6100
.230 -13.9 4.333
-164.2 .103 142.1 .374 -3.1
6200
.240 -55.4 4.272
176.2 .105 123.1 .358 -26.4
6300
.290 -92.9 4.170
156.2 .106 103.7 .333 -53.6
6400
.365 -123.7 3.999 135.8 .103 84.0 .306 -85.1
6500
.451 -148.8 3.756 115.2 .099 63.8 .300 -122.1
6600
.538 -170.8 3.470 94.6 .092 43.7 .327 -159.3
+j250
+j100
+j50
+j25
+j10
0
-j10
-j25
-j50
-j100
-j250
S11
S22
180
+90
0
-90
S21
S12
SCALE FOR |S
12
|
50
25
250
SCALE FOR |S21|
5.8
5.8
5.8
5.9
5.9
6.0
6.0
6.1
6.1
6.2
6.2
5.8
6.3
6.3
6.4
6.4
6.5
6.5
6.6
6.6
5.7GHz
5.7GHz
0.1
0.2
1
2
3
4
5.8
5.8
5.9
5.9
6.0
6.0
6.1
6.1
6.2
6.2
6.3
6.3
6.4
6.4
6.5
6.5
6.6
6.6
5.7GHz
5.7GHz
4
FLM5964-25F
C-Band Internally Matched FET
4-R 1.3
0.15
(0.051)
0.6
(0.024)
14.9
(0.587)
20.4
0.3
(0.803)
24
0.5
(0.945)
5.5 Max.
(0.217)
2.4
0.15
(0.094)
0.1
(0.004)
1.4
(0.055)
17.4
0.3
(0.685)
8.0
0.2
(0.315)
2.0 Min.
(0.079)
2.0 Min.
(0.079)
Case Style "IK"
Metal-Ceramic Hermetic Package
Unit: mm(inches)
1. Gate
2. Source (Flange)
3. Drain
1
3
2
Eudyna Devices Inc. products contain gallium arsenide
(GaAs) which can be hazardous to the human body and the environment.
For safety, observe the following procedures:
CAUTION
Do not put this product into the mouth.
Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-products
are dangerous to the human body if inhaled, ingested, or swallowed.
Observe government laws and company regulations when discarding this
product. This product must be discarded in accordance with methods
specified by applicable hazardous waste procedures.
For further information please contact:
Eudyna Devices USA Inc.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
TEL: (408) 232-9500
FAX: (408) 428-9111
www.us.eudyna.com
Eudyna Devices Europe Ltd.
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
United Kingdom
TEL: +44 (0) 1628 504800
FAX: +44 (0) 1628 504888
Eudyna Devices Asia Pte Ltd.
Hong Kong Branch
Rm. 1101, Ocean Centre, 5 Canton Rd.
Tsim Sha Tsui, Kowloon, Hong Kong
TEL: +852-2377-0227
FAX: +852-2377-3921
Eudyna Devices Inc.
Sales Division
1, Kanai-cho, Sakae-ku
Yokohama, 244-0845, Japan
TEL: +81-45-853-8156
FAX: +81-45-853-8170
Eudyna Devices Inc. reserves the right to change products and specifications
without notice. The information does not convey any license under rights of
Eudyna Devices Inc. or others.
2004 Eudyna Devices USA Inc.
Printed in U.S.A.
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