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Электронный компонент: P0120003P

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Technical Note
P0120003P
800mW GaAs Power FET (Pb-Free Type)
SUMITOMO ELECTRIC
Specifications and information are subject to change without notice. 2003-11
Sumitomo Electric Industries, Ltd. 1,Taya-cho, Sakae-ku, Yokohama, 244-8588 Japan
Phone: +81-45-853-7263 Fax: +81-45-853-1291 e-mail :
GaAsIC-ml@ml.sei.co.jp
Features
4
1
2
3
4
1
2
3
Up to 2.7 GHz frequency band
Web Site:
www.sei.co.jp/GaAsIC/
Beyond +27 dBm output power
Up to +43dBm Output IP3
High Drain Efficiency
12dB Gain at 2.1GHz
SOT-89 SMT Package
Low Noise Figure
Applications
Wireless communication system
Cellular, PCS, PHS, W-CDMA, WLAN
Description
P0120003P is a high performance GaAs MESFET housed in
a low-cost SOT-89 package. Our originally developed
"pulse-doped" channel structure has realized low distortion,
which leads to high IP3. The channel structure also achieved
an extremely low noise figure. The details about pulse-doped
FET channel are described in our products catalog.
Utilization of AuSn die attach has realized a low and stable
thermal resistance. The lead frame is plated with Sn-Bi to
make the device Pb-free.
SEI's long history of manufacturing has cultivated high
device reliability. The estimated MTTF of the FET is longer
than 15years at Tj of 150C. You can see the details in
Reliability and Quality Assurance.
Functional Diagram
Pin No.
Function
1 Input/Gate
2, 4
Ground
3 Output/Drain
Ordering Information
Part No
Description
Number
of devices
Container
P0120003P
GaAs Power FET
1000
7" Reel
KP023J
2.11-2.17GHz
Application Circuit
1
Anti-static
Bag
Absolute Maximum Ratings
(@Tc=25C)
Parameter Symbol
Value
Units
Drain-Source Voltage
Vds
8
V
Gate-Source Voltage
Vgs
- 4
V
Drain Current
Ids
Idss
---
RF Input Power
(continuous)
Pin 20
(*)
dBm
Power Dissipation
Pt 2.2 W
Junction Temperature
Tj
125
C
Storage Temperature
Tstg
- 40 to +125
C
Tc: Case Temperature. Operating the device beyond any of these
values may cause permanent damage.
(*) Measured at 2.1GHz with our test fixture matched to OIP3.
Electrical Specifications (@Tc=25C)
Values
Parameter Symbol
Test
Conditions
Min. Typ. Max.
Units
Saturated Drain Current
Idss
Vds=3V, Vg=0V
---
---
850
mA
Transconductance gm
Vds=6V, Ids=300mA
250
---
---
mS
Pinchoff Voltage
Vp
Vds=6V, Ids=30mA
- 3.0
---
- 1.7
V
Gate-Source Breakdown Voltage
|Vgs0|
Igso= - 30
A
3.0 --- --- V
DC
Thermal Resistance
Rth
Channel-Case
---
--- 45
C/W
Frequency f
2.7
GHz
Output Power
@ 1dB Gain Compression
P1dB
29
---
dBm
Small Signal Gain
G
12
---
dB
Output IP3
OIP3
---
43
---
dBm
RF
Power Added Efficiency
add
Vds=6V
Ids=220mA
f=2.1GHz
---
56 --- %
-1-
Technical Note
P0120003P
800mW GaAs Power FET (Pb-Free Type)
SUMITOMO ELECTRIC
Typical Characteristics



T
o
t
a
l P
o
w
e
r D
i
s
s
ip
a
t
i
o
n
(
W
)
Tc (C)
3
4
2
1
0
0
50
100
150
200
Vgs=0V
-2.0V
-1.5V
-1.0V
-0.5V
D
r
a
i
n C
u
r
r
e
nt
(
m
A
)
Vds (V)
1000
50
100
150
200
Vgs=0V
-2.0V
-1.5V
-1.0V
-0.5V
D
r
a
i
n C
u
r
r
e
nt
(
m
A
)
Vds (V)
1000
750
500
250
0
750
500
250
0
0
2
4
6
8
Transfer Curve
Power Derating Curve
















Load-pull Characteristics (Typical Data)
Tc=25C, Vds=6V, Ids=220mA, Common Source, Zo=50
(Calibrated to device leads)



0
45
90
135
-180
-135
-9
0
-45
0
45
90
135
-180
-135
-9
0
-45
S12
S21
1.2GHz
1.2GHz
2.4GHz
2.4GHz
2.0
6.0
4.0
0
0.02
0.04
0.06
0
Scale for |S12|
Sc
a
l
e
fo
r |
S
2
1
|
0
1.
0
1.
0
-1
.
0
10
.
0
10.0
-10
.0
5.
0
5.0
-5.
0
2.
0
2.
0
-2
.0
3.
0
3.0
-3.
0
4.
0
4.0
-4.
0
0.
2
0.2
-0.2
0.
4
0.4
-0.
4
0.
6
0.
6
-0
.6
0.
8
0.
8
-0
.8
0
1.
0
1.
0
-1
.
0
10
.
0
10.0
-10
.0
5.
0
5.0
-5.
0
2.
0
2.
0
-2
.0
3.
0
3.0
-3.
0
4.
0
4.0
-4.
0
0.
2
0.2
-0.2
0.
4
0.4
-0.
4
0.
6
0.
6
-0
.6
0.
8
0.
8
-0
.8
S11
S22
1.2GHz
1.2GHz
2.4GHz
2.4GHz
















Specifications and information are subject to change without notice. 2003-11
Sumitomo Electric Industries, Ltd. 1,Taya-cho, Sakae-ku, Yokohama, 244-8588 Japan
Phone: +81-45-853-7263 Fax: +81-45-853-1291 e-mail :
GaAsIC-ml@ml.sei.co.jp
-2-
Web Site:
www.sei.co.jp/GaAsIC/
Technical Note
P0120003P
800mW GaAs Power FET (Pb-Free Type)
SUMITOMO ELECTRIC
Tc=25C, Vds=6V, Ids=180mA, Common Source, Zo=50
(Calibrated to device leads)

Specifications and information are subject to change without notice. 2003-11
Sumitomo Electric Industries, Ltd. 1,Taya-cho, Sakae-ku, Yokohama, 244-8588 Japan
Phone: +81-45-853-7263 Fax: +81-45-853-1291 e-mail :
GaAsIC-ml@ml.sei.co.jp
Web Site:
www.sei.co.jp/GaAsIC/
0
0
1.
0
1.
0
-1
.0
10
.
0
10.0
-10
.0
5.
0
5.0
-5.
0
2.0
2.
0
-2
.0
3.
0
3.0
-3.
0
4.0
4.0
-4.
0
0.2
0.2
-0.2
0.4
0.4
-0
.4
0.
6
0.
6
-0
.6
0.
8
0.
8
-0
.8
1.
0
1.
0
-1
.0
10
.
0
10.0
-10
.0
5.
0
5.0
-5.
0
2.0
2.
0
-2
.0
3.
0
3.0
-3.
0
4.0
4.0
-4.
0
0.2
0.2
-0.2
0.4
0.4
-0
.4
0.
6
0.
6
-0
.6
0.
8
0.
8
-0
.8
S11
S22
1.2GHz
1.2GHz
2.4GHz
2.4GHz
0
45
90
13
5
-180
-135
-9
0
-4
5
0
45
90
13
5
-180
-135
-9
0
-4
5
S12
S21
1.2GHz
1.2GHz
2.4GHz
2.4GHz
2.0
6.0
4.0
0
0.02
0.04
0.06
0
Scale for |S12|
S
c
al
e f
o
r
|
S
2
1
|
Ids
Ids
=220mA Freq (GHz) S11 Mag
S11 Ang
S21 Mag
S21 Ang
S12 Mag
S12 Ang
S22 Mag
S22 Ang
1.2
0.760
-161.1
5.548
77.6
0.049
36.8
0.204
-160.1
1.4
0.756
-172.5
4.827
69.3
0.052
34.4
0.212
-166.9
1.6
0.754
178.0
4.263
61.7
0.056
32.3
0.219
-172.7
1.8
0.754
169.6
3.812
54.6
0.060
30.0
0.225
-178.1
2.0
0.755
162.0
3.454
47.9
0.063
27.7
0.229
176.5
2.2
0.755
154.9
3.163
41.3
0.067
25.2
0.233
171.2
2.4
0.754
148.0
2.925
34.8
0.072
22.4
0.238
164.9
=180mA Freq (GHz) S11 Mag
S11 Ang
S21 Mag
S21 Ang
S12 Mag
S12 Ang
S22 Mag
S22 Ang
1.2
0.758
-161.1
5.539
77.7
0.051
35.5
0.215
-161.3
1.4
0.754
-172.5
4.820
69.3
0.054
33.1
0.223
-168.2
1.6
0.753
178.0
4.256
61.8
0.057
30.9
0.229
-174.0
1.8
0.753
169.6
3.805
54.7
0.061
28.6
0.235
-179.5
2.0
0.753
162.0
3.449
48.0
0.065
26.3
0.239
175.0
2.2
0.753
154.9
3.158
41.4
0.069
23.8
0.243
169.6
2.4
0.752
148.0
2.920
34.9
0.073
21.0
0.248
163.4
[Note]
You can download the S-parameter list from our web site:
www.sei.co.jp/GaAsIC
/
-3-
Technical Note
P0120003P
800mW GaAs Power FET (Pb-Free Type)
SUMITOMO ELECTRIC
Ids=220mA Ids=180mA
-100
-80
-60
-40
-20
0
20
40
60
80
Po
u
t
(
d
B
m
)
IM
3
(
d
B
m
)
IP
3
(
d
B
m
)
IM
3
/
P
o
u
t
(
d
B
c
)

ad
d
(
%
)
-20
-15
-10
-5
0
5
10
15
20
Pin (dBm)
Pout
Gain
IP3
add
IM3
IM3/Pout
-100
-80
-60
-40
-20
0
20
40
60
80
Po
u
t
(
d
B
m
)
IM
3
(
d
B
m
)
IP
3
(
d
B
m
)
IM
3
/
P
o
u
t
(
d
B
c
)

ad
d
(
%
)
-20
-15
-10
-5
0
5
10
15
20
Pin (dBm)
Pout
Gain
IP3
add
IM3
IM3/Pout
-20
-15
-10
-5
0
5
10
15
20
Pin (dBm)
Pout
Gain
IP3
add
IM3
IM3/Pout
-20
-100
-80
-60
-40
-20
0
20
40
60
80
-15
-10
-5
0
5
10
15
20
Po
u
t
(
d
B
m
)
IM3
(
d
B
m
)
IP
3
(
d
B
m
)
IM
3
/
P
o
u
t
(
d
B
c
)

ad
d
(
%
)
Pin (dBm)
Pout
Gain
IP3
add
IM3
IM3/Pout
-100
-80
-60
-40
-20
0
20
40
60
80
-15
-10
-5
0
5
10
15
20
Po
u
t
(
d
B
m
)
IM3
(
d
B
m
)
IP
3
(
d
B
m
)
IM
3
/
P
o
u
t
(
d
B
c
)

ad
d
(
%
)
Pin (dBm)
Pout
Gain
IP3
add
IM3
IM3/Pout
Device: P0120003P
Frequency: f1=2.1GHz, f2=2.101GHz
Bias: Vds=6V, Ids=220mA
Source Matching: Mag 0.61 Ang -159.3
Load Matching: Mag 0.48 Ang -155.4
Device:P0120003P
Frequency: f1=2.1GHz, f2=2.101GHz
Bias:Vds=6V,Ids=180mA
Source Matching:Mag 0.61 Ang -159.3
Load Matching: Mag 0.437 Ang -160.7



















[Note] P
out
and
add
are measured by one signal.
The data for the figures above were measured with the load impedance matched to IP3.
Id=220mA
Pin
(dBm)
Pout
(dBm)
Gain
(dB)
IM3
(dBm)
IM3/Pout
(dBc)
IP3
(dBm)
Id
(mA)
add
(%)
-15.0
-2.0
13.0
-75.0
-73.0
34.5
220.5
0.0
-10.0
3.2
13.2
-70.2
-73.3
39.9
219.1
0.2
-5.0
8.1
13.1
-59.5
-67.7
42.1
216.4
0.5
0.0
13.1
13.1
-46.0
-59.0
42.6
212.0
1.5
5.0
18.0
13.0
-28.5
-46.5
41.0
205.3
4.9
10.0
23.1
13.1
-2.5
-25.7
35.2
207.5
15.7
15.0
27.6
12.6
11.1
-16.5
33.8
252.6
35.8
Id=180mA
Pin
(dBm)
Pout
(dBm)
Gain
(dB)
IM3
(dBm)
IM3/Pout
(dBc)
IP3
(dBm)
Id
(mA)
add
(%)
-15.0
-1.7
13.3
-75.4
-73.7
35.1
178.2
0.1
-10.0
3.5
13.5
-68.7
-72.2
39.6
177.1
0.2
-5.0
8.4
13.4
-56.1
-64.5
40.7
174.8
0.6
0.0
13.4
13.4
-41.3
-54.7
40.7
171.2
2.0
5.0
18.4
13.4
-23.0
-41.3
39.0
165.1
6.6
10.0
23.4
13.4
0.6
-22.8
33.9
173.1
20.1
15.0
27.6
12.6
11.1
-16.5
34.0
216.4
41.9





















Specifications and information are subject to change without notice. 2003-11
Sumitomo Electric Industries, Ltd. 1,Taya-cho, Sakae-ku, Yokohama, 244-8588 Japan
Phone: +81-45-853-7263 Fax: +81-45-853-1291 e-mail :
GaAsIC-ml@ml.sei.co.jp
-4-
Web Site:
www.sei.co.jp/GaAsIC/
Specifications and information are subject to change without notice. 2003-11
Sumitomo Electric Industries, Ltd. 1,Taya-cho, Sakae-ku, Yokohama, 244-8588 Japan
Phone: +81-45-853-7263 Fax: +81-45-853-1291 e-mail :
GaAsIC-ml@ml.sei.co.jp
Web Site:
www.sei.co.jp/GaAsIC/
-5-
Technical Note
P0120003P
800mW GaAs Power FET (Pb-Free Type)
SUMITOMO ELECTRIC
Tc=25C, Vds=6V, Ids=220mA, Pin=0d Bm
[Pout-Lstate]
f = 2.1GHz
pout
: 0.46
135.5
Source : 0.76
-166.1
Pout max : 14.4d Bm
[IP3-Lstate]
f1 = 2.1GHz
f2 = 2.101GHz
IP3
: 0.52
-155.9
Source : 0.73
-170.1
IP3 max : 40.45d Bm
Tc=25C, Vds=6V, Ids=180mA, Pin=0d Bm
[Pout-Lstate]
f = 2.1GHz
pout
: 0.46
138.7
Source : 0.76
-166.1
Pout max : 14.4d Bm
[IP3-Lstate]
f1 = 2.1GHz
f2 = 2.101GHz
IP3
: 0.42
-160.2
Source : 0.73
-170.1
IP3 max : 39.3d Bm
+j50
13.15
14.4
+j25
+j100
-j100
-j50
-j25
25
50
100
+j50
13.15
14.4
+j25
+j100
-j100
-j50
-j25
25
50
100
39.2
+j25
+j50
+j100
-j100
-j50
-j25
25
50
100
40.45
39.2
+j25
+j50
+j100
-j100
-j50
-j25
25
50
100
40.45
+j50
36.8
+j25
+j100
-j100
-j50
-j25
25
50
100
39.3
36.8
+j25
+j100
-j100
-j50
-j25
25
50
100
39.3
13.9
+j25
+j50
+j100
-j100
-j50
-j25
25
50
100
14.4
13.9
+j25
+j50
+j100
-j100
-j50
-j25
25
50
100
14.4