ChipFind - документация

Электронный компонент: P0511946H

Скачать:  PDF   ZIP
Features
1.9 GHz frequency band
Typical 39.0 dBm output power
Low power consumption 43 W typ.
Excellent adjacent leakage power
Typical 30 dB power gain
Cost-effective metal package
Low thermal resistance structure
Applications
Final stage power amplifier of base station for PHS
Description
The P0511946H is a high performance 1.9 GHz band power amplifier module capable of
39 dBm output power with a typical 30 dB gain at 1.9 GHz band, housed in a cost effective
metal package. This device features a low power consumption owing to the excellent linear-
ity and high gain of the pulse-doped GaAs MESFET developed by SEI, dissipating 3600 mA
typical. It operates from +12 V and -5 V power supplies.
P0511946H
1.9 GHz band
Power Amplifier Module
03.05.26
Preliminary
Power Amplifier Module
P0511946H
Absolute Maximum Ratings
Case Temperature Tc=35
C
Electrical Specifications
Case Temperature Tc=35
C
Notes: Operating of this device above any one of these parameters may cause permanent damage.
*1:Vg1,Vg2=-5.0 V
*2:Burst Operation (Duty Ratio<=50%)
Parameter
Symbol
Value
Units
DC Supply Voltage
13*1
V
- 6
V
Input Power
Operating Case Temperature
Topt
-20 to + 85*2
C
Storage Temperature
Tstg
-40 to + 90
C
Vd
Vg
Pin
15
dBm
Parameter
Symbol
Test Conditions
Frequency
Supply Current (under operation)
Power Gain
Harmonic Distortion
Gate Current
Input VSWR
ID
f
Ga
2f0
3f0
IG
Value
Min.
Typ.
Max.
Units
1920
MHz
mA
27.0
dB
dBc
1880
30.0
-40
mA
dBc
-40
20
4000
1.8
2.5
Pout=39.0 dBm
Vd1=12V
Vd2=12 V
Vd3=12V
Vg1=-5.0 V
Vg2=-5.0 V
Adjacent Channel Leakage Power
Ratio
Occupied Frequency Bandwidth
ACLR1
ACLR2
-68
dBc
dBc
600 kHz offset
900 kHz offset
-74
kHz
270
3600
Power Amplifier Module
P0511946H


Power Characteristics
Adjacent Channel Leakage Power Ratio
20
25
30
35
40
45
3000
3500
4000
4500
5000
5500
-15
-10
-5
0
5
10
15
Pin (dBm)
Pout
Ga
Id
f=1900MHz
Vd1=Vd2=Vd3=12V
Vg1=Vg2=-5V
Pout (dBm), Ga (dB)
ID (mA)
-80
-75
-70
-65
-60
25
30
35
40
45
-600kHz
+600kHz
-900kHz
+900kHz
Pout (dBm)
f=1900MHz
Vd1=Vd2=Vd3=12V
Vg1=Vg2=-5V
/4DQPSK 384kbps
=0.5 PN9
ACLR (dBc)
Power Amplifier Module
P0511946H
Package Drawings (Dimensions are mm)
Pin Assignment
(1) RFin
(2) GND
(3) Vd1
(4) Vg1
(5) Vd2
(6) Vg2
(7) Vd3
(8) GND
(9) RFout
Case:GND
Note:
(1)Lead Size
: 0.25x0.5
(2)Nominal Variation of Lead Pitch
:
0.3
(3)Nominal Variation of parts undescribed
:
0.3
43.0
48.0
53.0
1.75
8.0
7.5
2.5
2.5
15.0
2.5
2.5
7.5
2.7
18
.
7
2
0
.4
MAX
3.0
.
10.5
0
14
.
0
53.0
2
.
0
6
.2
MAX
2
.
5
(1) (2) (3)
(4) (5) (6)
(8)
(7)
(9)
P0511946H
lot no.
Dimensions are mm (
+/-
0.3mm)
Lead Size : 0.25x0.5
Power Amplifier Module
P0511946H
Evaluation Board Layout (Dimensions are mm)
Electron Device Department
KP004J
60
60
Vd1
Vd2
Vd3
Vg1
Vg2
RFout
RFin
Circuit Board
0.8mm Dielectric Thickness
r=4.0,18
m copper
22
C3
C1
C2
C4
C6
C5
RFin
RFout
Vd1
Vd2
Vg1
Vg2
Vd3
C1
C2
C3
C4
C5
DESIGNATION VALUE
C2,C4
0.1
F
C1,C3,C5,C6
1.0
F
C6
Vd1
Vd2
Vg1
Vd
3
Vg2
RFout
RF
in
52