Features
1.9 GHz frequency band
Typical 36 dBm output power
Low power consumption 18 W typ.
Excellent adjacent leakage power
Typical 35 dB power gain
Cost-effective metal package
Low thermal resistance structure
Applications
Final stage power amplifier of base station for PHS
Description
The P0531981H is a high performance 1.9 GHz band power amplifier module capable of
36 dBm output power with a typical 35 dB gain at 1.9 GHz band, housed in a cost effective
metal package. This device features a low power consumption owing to the excellent linear-
ity and high gain of the pulse-doped GaAs MESFET developed by SEI, dissipating 1500 mA
typical. It operates from +12 V and -4.9 V power supplies.
P0531981H
1.9 GHz band
Power Amplifier Module
03.05.08
Preliminary
Power Amplifier Module
P0531981H
Absolute Maximum Ratings
Case Temperature Tc=25
C
Electrical Specifications
Case Temperature Tc=25
C
Notes: Operating of this device above any one of these parameters may cause permanent damage.
*Vg1,Vg2=-4.9V
Parameter
Symbol
Value
Units
DC Supply Voltage
14 *
V
- 7
V
Input Power
Operating Case Temperature
Topt
-25 to + 80
C
Storage Temperature
Tstg
-40 to + 95
C
Vd1, Vd2
Vg1, Vg2
Pin
10
dBm
Parameter
Symbol
Test Conditions
Frequency
Supply Current (under operation)
Power Gain
Harmonic Distortion
Gate Current
Input VSWR
Id
f
Ga
2f0
3f0
Ig
Value
Min.
Typ.
Max.
Units
1920
MHz
mA
34
dB
dBc
--
1880
-35
2.5
--
mA
dBc
-35
-45
15
1650
--
--
8
--
--
1500
1.5
35
--
Pout=36.0 dBm
Vd1=12 V
Vd2=12 V
Vg1=-4.9 V
Vg2=-4.9 V
--
-45
Adjacent Channel Leakage Power
Padj1
Padj2
--
--
-70
-67
dBc
dBc
600 kHz offset
900 kHz offset
-74
-72
in