Technische Information / Technical Information
IGBT-Module
IGBT-Modules
BSM 20 GD 60 DLC E3224
Hchstzulssige Werte / Maximum rated values
Elektrische Eigenschaften / Electrical properties
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
V
CES
600
V
T
C
= 80C
I
C,nom.
20
A
T
C
= 25C
I
C
32
A
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
t
P
= 1ms, T
C
= 80C
I
CRM
40
A
Gesamt-Verlustleistung
total power dissipation
T
C
= 25C, Transistor
P
tot
125
W
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
V
GES
+/- 20V
V
Dauergleichstrom
DC forward current
I
F
20
A
Periodischer Spitzenstrom
repetitive peak forw. current
t
P
= 1ms
I
FRM
40
A
Grenzlastintegral der Diode
I
2
t - value, Diode
V
R
= 0V, t
p
= 10ms, T
Vj
= 125C
I
2
t
130
A
2
s
Isolations-Prfspannung
insulation test voltage
RMS, f= 50Hz, t= 1min.
V
ISOL
2,5
kV
Charakteristische Werte / Characteristic values
Transistor / Transistor
min.
typ.
max.
Kollektor-Emitter Sttigungsspannung
I
C
= 20A, V
GE
= 15V, T
vj
= 25C
-
1,95
2,45
V
collector-emitter saturation voltage
I
C
= 20A, V
GE
= 15V, T
vj
= 125C
-
2,20
-
V
Gate-Schwellenspannung
gate threshold voltage
I
C
= 0,5mA, V
CE
= V
GE
, T
vj
= 25C
V
GE(th)
4,5
5,5
6,5
V
Eingangskapazitt
input capacitance
f= 1MHz, T
vj
= 25C, V
CE
= 25V, V
GE
= 0V
C
ies
-
1,1
-
nF
Rckwirkungskapazitt
reverse transfer capacitance
f= 1MHz, T
vj
= 25C, V
CE
= 25V, V
GE
= 0V
C
res
-
0,07
-
nF
Kollektor-Emitter Reststrom
V
CE
= 600V, V
GE
= 0V, T
vj
= 25C
-
1
500
A
collector-emitter cut-off current
V
CE
= 600V, V
GE
= 0V, T
vj
= 125C
-
1
-
mA
Gate-Emitter Reststrom
gate-emitter leakage current
V
CE
= 0V, V
GE
= 20V, T
vj
= 25C
I
GES
-
-
400
nA
prepared by: Andreas Vetter
date of publication: 2000-04-26
approved by: Michael Hornkamp
revision: 1
V
CE sat
I
CES
Kollektor-Dauergleichstrom
DC-collector current
1 (8)
BSM 20 GD 60 DLC E3224
2000-02-08
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
BSM 20 GD 60 DLC E3224
Charakteristische Werte / Characteristic values
Transistor / Transistor
min.
typ.
max.
I
C
= 20A, V
CC
= 300V
V
GE
= 15V, R
G
= 27
, T
vj
= 25C
t
d,on
-
45
-
ns
V
GE
= 15V, R
G
= 27
, T
vj
= 125C
-
47
-
ns
I
C
= 20A, V
CC
= 300V
V
GE
= 15V, R
G
= 27
, T
vj
= 25C
t
r
-
23
-
ns
V
GE
= 15V, R
G
= 27
, T
vj
= 125C
-
24
-
ns
I
C
= 20A, V
CC
= 300V
V
GE
= 15V, R
G
= 27
, T
vj
= 25C
t
d,off
-
107
-
ns
V
GE
= 15V, R
G
= 27
, T
vj
= 125C
-
125
-
ns
I
C
= 20A, V
CC
= 300V
V
GE
= 15V, R
G
= 27
, T
vj
= 25C
t
f
-
18
-
ns
V
GE
= 15V, R
G
= 27
, T
vj
= 125C
-
21
-
ns
Einschaltverlustenergie pro Puls
I
C
= 20A, V
CC
= 300V, V
GE
= 15V
turn-on energy loss per pulse
R
G
= 27
, T
vj
= 125C, L
= 15nH
Abschaltverlustenergie pro Puls
I
C
= 20A, V
CC
= 300V, V
GE
= 15V
turn-off energy loss per pulse
R
G
= 27
, T
vj
= 125C, L
= 15nH
Kurzschluverhalten
t
P
10sec, V
GE
15V
SC Data
T
Vj
125C, V
CC
=360V, V
CEmax
=V
CES
-L
CE
dI/dt
Modulinduktivitt
stray inductance module
L
CE
-
60
-
nH
Modul-Leitungswiderstand, Anschlsse - Chip
lead resistance, terminals - chip
T
C
= 25C
R
CC'+EE'
-
10
-
m
Charakteristische Werte / Characteristic values
Diode / Diode
min.
typ.
max.
Durchlaspannung
I
F
= 20A, V
GE
= 0V, T
vj
= 25C
-
1,25
1,6
V
forward voltage
I
F
= 20A, V
GE
= 0V, T
vj
= 125C
-
1,20
-
V
I
F
= 20A, -di
F
/dt= 900A/sec
V
R
= 300V, V
GE
= -10V, T
vj
= 25C
I
RM
-
21
-
A
V
R
= 300V, V
GE
= -10V, T
vj
= 125C
-
25
-
A
I
F
= 20A, -di
F
/dt= 900A/sec
V
R
= 300V, V
GE
= -10V, T
vj
= 25C
Q
r
-
1,4
-
C
V
R
= 300V, V
GE
= -10V, T
vj
= 125C
-
2,4
-
C
I
F
= 20A, -di
F
/dt= 900A/sec
V
R
= 300V, V
GE
= -10V, T
vj
= 25C
E
rec
-
-
-
mJ
V
R
= 300V, V
GE
= -10V, T
vj
= 125C
-
0,43
-
mJ
Einschaltverzgerungszeit (ind. Last)
turn on delay time (inductive load)
Anstiegszeit (induktive Last)
rise time (inductive load)
Abschaltverzgerungszeit (ind. Last)
turn off delay time (inductive load)
Fallzeit (induktive Last)
fall time (inductive load)
E
off
E
on
mJ
-
0,68
-
mJ
-
-
0,38
-
Abschaltenergie pro Puls
reverse recovery energy
A
V
F
Rckstromspitze
peak reverse recovery current
Sperrverzgerungsladung
recoverred charge
I
SC
-
80
2 (8)
BSM 20 GD 60 DLC E3224
2000-02-08
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
BSM 20 GD 60 DLC E3224
Thermische Eigenschaften / Thermal properties
min.
typ.
max.
Innerer Wrmewiderstand
Transistor / transistor, DC
-
-
1,0
K/W
thermal resistance, junction to case
Diode / diode, DC
-
-
1,5
K/W
bergangs-Wrmewiderstand
thermal resistance, case to heatsink
pro Modul / per module
Paste
= 1W/m*K /
grease
= 1W/m*K
R
thCK
-
0,02
-
K/W
Hchstzulssige Sperrschichttemperatur
maximum junction temperature
T
vj
-
-
150
C
Betriebstemperatur
operation temperature
T
op
-40
-
125
C
Lagertemperatur
storage temperature
T
stg
-40
-
125
C
Mechanische Eigenschaften / Mechanical properties
Gehuse, siehe Anlage
case, see appendix
Innere Isolation
internal insulation
Al
2
O
3
CTI
comperative tracking index
225
Anzugsdrehmoment f. mech. Befestigung
mounting torque
M
-15
4
+15
Nm
%
Gewicht
weight
G
180
g
Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert.
Sie gilt in Verbindung mit den zugehrigen Technischen Erluterungen.
This technical information specifies semiconductor devices but promises no characteristics.
It is valid in combination with the belonging technical notes.
R
thJC
3 (8)
BSM 20 GD 60 DLC E3224
2000-02-08
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
BSM 20 GD 60 DLC E3224
I
C
[A]
V
CE
[V]
I
C
[A]
V
CE
[V]
0
5
10
15
20
25
30
35
40
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
Tvj = 25C
Tvj = 125C
Ausgangskennlinie (typisch) I
C
= f (V
CE
)
Output characteristic (typical)
V
GE
= 15V
0
5
10
15
20
25
30
35
40
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
4,5
5,0
VGE = 8V
VGE = 9V
VGE = 10V
VGE = 12V
VGE = 15V
VGE = 20V
Ausgangskennlinienfeld (typisch) I
C
= f (V
CE
)
Output characteristic (typical)
T
vj
= 125C
4 (8)
BSM 20 GD 60 DLC E3224
2000-02-08
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
BSM 20 GD 60 DLC E3224
I
C
[A]
V
GE
[V]
I
F
[A]
V
F
[V]
0
5
10
15
20
25
30
35
40
5
6
7
8
9
10
11
12
13
Tvj = 25C
Tvj = 125C
bertragungscharakteristik (typisch) I
C
= f (V
GE
)
Transfer characteristic (typical)
V
CE
= 20V
0
5
10
15
20
25
30
35
40
0,0
0,2
0,4
0,6
0,8
1,0
1,2
1,4
1,6
Tvj = 25C
Tvj = 125C
Durchlakennlinie der Inversdiode (typisch) I
F
= f (V
F
)
Forward characteristic of inverse diode (typical)
5 (8)
BSM 20 GD 60 DLC E3224
2000-02-08
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