Technische Information / Technical Information
IGBT-Module
IGBT-Modules
BSM50GP60
Elektrische Eigenschaften / Electrical properties
Hchstzulssige Werte / Maximum rated values
Diode Gleichrichter/ Diode Rectifier
Periodische Rckw. Spitzensperrspannung
repetitive peak reverse voltage
V
RRM
1600 V
Durchlastrom Grenzeffektivwert
RMS forward current per chip
I
FRMSM
40 A
Dauergleichstrom
DC forward current
T
C
= 80C I
d
50 A
Stostrom Grenzwert t
P
= 10 ms, T
vj
= 25C I
FSM
315 A
surge forward current t
P
= 10 ms, T
vj
= 150C 260 A
Grenzlastintegral
t
P
= 10 ms, T
vj
= 25C I
2
t 500 A
2
s
I
2
t - value
t
P
= 10 ms, T
vj
= 150C 340
A
2
s
Transistor Wechselrichter/ Transistor Inverter
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
V
CES
600 V
Kollektor-Dauergleichstrom Tc = 80 C I
C,nom.
50 A
DC-collector current T
C
= 25 C I
C
70 A
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
t
P
= 1 ms, T
C
= 80 C I
CRM
100 A
Gesamt-Verlustleistung
total power dissipation
T
C
= 25C P
tot
250 W
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
V
GES
+/- 20V V
Diode Wechselrichter/ Diode Inverter
Dauergleichstrom
DC forward current
Tc = 80 C I
F
50 A
Periodischer Spitzenstrom
repetitive peak forw. current
t
P
= 1 ms I
FRM
100 A
Grenzlastintegral
I
2
t - value
V
R
= 0V, t
p
= 10ms, T
vj
= 125C
I
2
t 760 A
2
s
Transistor Brems-Chopper/ Transistor Brake-Chopper
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
V
CES
600 V
Kollektor-Dauergleichstrom T
C
= 80 C I
C,nom.
25 A
DC-collector current T
C
= 25 C I
C
35 A
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
t
P
= 1 ms, T
C
= 80C I
CRM
50 A
Gesamt-Verlustleistung
total power dissipation
T
C
= 25C P
tot
130 W
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
V
GES
+/- 20V V
Diode Brems-Chopper/ Diode Brake-Chopper
Dauergleichstrom
DC forward current
Tc = 80 C I
F
12,5 A
Periodischer Spitzenstrom
repetitive peak forw. current
t
P
= 1 ms I
FRM
25 A
prepared by: Andreas Schulz date of publication:17.09.1999
approved by: M.Hierholzer revision: 4
1(11)
DB-PIM-9.xls
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
BSM50GP60
Modul Isolation/ Module Isolation
Isolations-Prfspannung
insulation test voltage
RMS, f = 50 Hz, t = 1 min.
NTC connected to Baseplate
V
ISOL
2,5
kV
Elektrische Eigenschaften / Electrical properties
Charakteristische Werte / Characteristic values
Diode Gleichrichter/ Diode Rectifier
min.
typ.
max.
Durchlaspannung
forward voltage
T
vj
= 150C, I
F
= 50 A
V
F
-
1,3
1,35
V
Schleusenspannung
threshold voltage
T
vj
= 150C
V
(TO)
-
-
0,8
V
Ersatzwiderstand
slope resistance
T
vj
= 150C
r
T
-
-
10,5
m
Sperrstrom
reverse current
T
vj
= 150C, V
R
= 1600 V
I
R
-
2
-
mA
Modul Leitungswiderstand, Anschlsse-Chip
lead resistance, terminals-chip
T
C
= 25C
R
AA'+CC'
-
5
-
m
Transistor Wechselrichter/ Transistor Inverter
min.
typ.
max.
Kollektor-Emitter Sttigungsspannung
V
GE
= 15V, T
vj
= 25C, I
C
=
50 A
V
CE sat
-
1,95
2,55
V
collector-emitter saturation voltage
V
GE
= 15V, T
vj
= 125C, I
C
=
50 A
-
2,2
-
V
Gate-Schwellenspannung
gate threshold voltage
V
CE
= V
GE
, T
vj
= 25C, I
C
=
1,0 mA
V
GE(TO)
4,5
5,5
6,5
V
Eingangskapazitt
input capacitance
f = 1MHz, T
vj
= 25C
V
CE
= 25 V, V
GE
= 0 V
C
ies
-
2,8
-
nF
Kollektor-Emitter Reststrom
V
GE
= 0V, T
vj
= 25C, V
CE
=
600 V
I
CES
-
1,5
500
A
collector-emitter cut-off current
V
GE
= 0V, T
vj
=125C, V
CE
=
600 V
-
2,0
-
mA
Gate-Emitter Reststrom
gate-emitter leakage current
V
CE
= 0V, V
GE
=20V, T
vj
=25C
I
GES
-
-
300
nA
Einschaltverzgerungszeit (ind. Last)
I
C
= I
Nenn
, V
CC
= 300 V
turn on delay time (inductive load)
V
GE
= 15V, T
vj
= 25C, R
G
=
22 Ohm
t
d,on
-
50
-
ns
V
GE
= 15V, T
vj
= 125C, R
G
=
22 Ohm
-
50
-
ns
Anstiegszeit (induktive Last)
I
C
= I
Nenn
, V
CC
= 300 V
rise time (inductive load)
V
GE
= 15V, T
vj
= 25C, R
G
=
22 Ohm
t
r
-
55
-
ns
V
GE
= 15V, T
vj
= 125C, R
G
=
22 Ohm
-
55
-
ns
Abschaltverzgerungszeit (ind. Last)
I
C
= I
Nenn
, V
CC
= 300 V
turn off delay time (inductive load)
V
GE
= 15V, T
vj
= 25C, R
G
=
22 Ohm
t
d,off
-
260
-
ns
V
GE
= 15V, T
vj
= 125C, R
G
=
22 Ohm
-
275
-
ns
Fallzeit (induktive Last)
I
C
= I
Nenn
, V
CC
=
300 V
fall time (inductive load)
V
GE
= 15V, T
vj
= 25C, R
G
=
22 Ohm
t
f
-
30
-
ns
V
GE
= 15V, T
vj
= 125C, R
G
=
22 Ohm
-
40
-
ns
Einschaltverlustenergie pro Puls
I
C
= I
Nenn
, V
CC
=
300 V
turn-on energy loss per pulse
V
GE
= 15V, T
vj
= 125C, R
G
=
22 Ohm
E
on
-
2,3
-
mWs
L
S
= 75 nH
Abschaltverlustenergie pro Puls
I
C
= I
Nenn
, V
CC
= 300 V
turn-off energy loss per pulse
V
GE
= 15V, T
vj
= 125C, R
G
=
22 Ohm
E
off
-
1,7
-
mWs
L
S
= 75 nH
Kurzschluverhalten
t
P
10s, V
GE
15V, R
G
=
22 Ohm
SC Data
T
vj
125C, V
CC
=
360 V
I
SC
-
200
-
A
dI/dt =
3000 A/s
2(11)
DB-PIM-9.xls
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
BSM50GP60
Elektrische Eigenschaften / Electrical properties
Charakteristische Werte / Characteristic values
min.
typ.
max.
Modulinduktivitt
stray inductance module
L
CE
-
-
100
nH
Modul Leitungswiderstand, Anschlsse-Chip
lead resistance, terminals-chip
T
C
= 25C
R
CC'+EE'
-
7
-
m
Diode Wechselrichter/ Diode Inverter
min.
typ.
max.
Durchlaspannung
V
GE
= 0V, T
vj
= 25C, I
F
=
50 A
V
F
-
1,25
1,7
V
forward voltage
V
GE
= 0V, T
vj
= 125C, I
F
=
50 A
-
1,2
-
V
Rckstromspitze
I
F
=I
Nenn
, - di
F
/dt = 1150A/s
peak reverse recovery current
V
GE
= -10V, T
vj
= 25C, V
R
=
300 V
I
RM
-
35
-
A
V
GE
= -10V, T
vj
= 125C, V
R
=
300 V
-
46
-
A
Sperrverzgerungsladung
I
F
=I
Nenn
, - di
F
/dt = 1150A/s
recovered charge
V
GE
= -10V, T
vj
= 25C, V
R
=
300 V
Q
r
-
3,4
-
As
V
GE
= -10V, T
vj
= 125C, V
R
=
300 V
-
6,2
-
As
Abschaltenergie pro Puls
I
F
=I
Nenn
, - di
F
/dt = 1150A/s
reverse recovery energy
V
GE
= -10V, T
vj
= 25C, V
R
=
300 V
E
RQ
-
0,8
-
mWs
V
GE
= -10V, T
vj
= 125C, V
R
=
300 V
-
1,3
-
mWs
Transistor Brems-Chopper/ Transistor Brake-Chopper
min.
typ.
max.
Kollektor-Emitter Sttigungsspannung
V
GE
= 15V, T
vj
= 25C, I
C
=
25,0 A
V
CE sat
-
2,2
2,75
V
collector-emitter saturation voltage
V
GE
= 15V, T
vj
= 125C, I
C
=
25,0 A
-
2,5
-
V
Gate-Schwellenspannung
gate threshold voltage
V
CE
= V
GE
, T
vj
= 25C, I
C
=
0,5 mA
V
GE(TO)
4,5
5,5
6,5
V
Eingangskapazitt
input capacitance
f = 1MHz, T
vj
= 25C
V
CE
= 25 V, V
GE
= 0 V
C
ies
-
1,1
-
nF
Kollektor-Emitter Reststrom
V
GE
= 0V, T
vj
= 25C, V
CE
=
600 V
I
CES
-
0,7
500
A
collector-emitter cut-off current
V
GE
= 0V, T
vj
= 125C, V
CE
=
600 V
-
1,0
-
mA
Gate-Emitter Reststrom
gate-emitter leakage current
V
CE
= 0V, V
GE
= 20V, T
vj
= 25C
I
GES
-
-
300
nA
Diode Brems-Chopper/ Diode Brake-Chopper
min.
typ.
max.
Durchlaspannung
T
vj
= 25C, I
F
=
25,0 A
V
F
-
1,6
2,05
V
forward voltage
T
vj
= 125C, I
F
=
25,0 A
-
1,65
-
V
NTC-Widerstand/ NTC-Thermistor
min.
typ.
max.
Nennwiderstand
rated resistance
T
C
= 25C
R
25
-
5
-
k
Abweichung von R
100
deviation of R
100
T
C
= 100C, R
100
= 493
R/R
-5
5
%
Verlustleistung
power dissipation
T
C
= 25C
P
25
20
mW
B-Wert
B-value
R
2
= R
1
exp [B(1/T
2
- 1/T
1
)]
B
25/50
3375
K
3(11)
DB-PIM-9.xls
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
BSM50GP60
Thermische Eigenschaften / Thermal properties
min.
typ.
max.
Innerer Wrmewiderstand
Gleichr. Diode/ Rectif. Diode
R
thJC
-
-
1
K/W
thermal resistance, junction to case
Trans. Wechsr./ Trans. Inverter
-
-
0,5
K/W
Diode Wechsr./ Diode Inverter
-
-
0,8
K/W
Trans. Bremse/ Trans. Brake
-
-
1
K/W
Diode Bremse/ Diode Brake
-
-
2,3
K/W
bergangs-Wrmewiderstand
Gleichr. Diode/ Rectif. Diode
Paste
=1W/m*K
R
thCK
-
0,08
-
K/W
thermal resistance, case to heatsink
Trans. Wechsr./ Trans. Inverter
grease
=1W/m*K
-
0,04
-
K/W
Diode Wechsr./ Diode Inverter
-
0,08
-
K/W
Hchstzulssige Sperrschichttemperatur
maximum junction temperature
T
vj
-
-
150
C
Betriebstemperatur
operation temperature
T
op
-40
-
125
C
Lagertemperatur
storage temperature
T
stg
-40
-
125
C
Mechanische Eigenschaften / Mechanical properties
Innere Isolation
internal insulation
Al
2
O
3
CTI
comperative tracking index
225
Anzugsdrehmoment f. mech. Befestigung
M
3
Nm
mounting torque
10%
Gewicht
weight
G
180
g
4(11)
DB-PIM-9.xls
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
BSM50GP60
I
C
[A]
V
CE
[V]
I
C
[A]
V
CE
[V]
Ausgangskennlinienfeld Wechselr. (typisch) I
C
= f (V
CE
)
Output characteristic Inverter (typical)
V
GE
= 15 V
0
10
20
30
40
50
60
70
80
90
100
0
0,5
1
1,5
2
2,5
3
3,5
4
4,5
5
Tj = 25C
Tj = 125C
0
10
20
30
40
50
60
70
80
90
100
0
0,5
1
1,5
2
2,5
3
3,5
4
4,5
5
VGE = 20V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 9V
Ausgangskennlinienfeld Wechselr. (typisch) I
C
= f (V
CE
)
Output characteristic Inverter (typical)
T
vj
= 125C
5(11)
DB-PIM-9.xls
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