Technische Information / Technical Information
IGBT-Module
IGBT-Modules
BSM 75 GB 60 DLC
Hchstzulssige Werte / Maximum rated values
Elektrische Eigenschaften / Electrical properties
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
V
CES
600
V
T
c
= 75C
I
C,nom.
75
A
T
c
= 25C
I
C
100
A
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
t
P
= 1ms, T
c
= 75C
I
CRM
150
A
Gesamt-Verlustleistung
total power dissipation
T
c
= 25C, Transistor
P
tot
355
W
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
V
GES
+/- 20V
V
Dauergleichstrom
DC forward current
I
F
75
A
Periodischer Spitzenstrom
repetitive peak forw. current
t
P
= 1ms
I
FRM
150
A
Grenzlastintegral der Diode
I
2
t - value, Diode
V
R
= 0V, t
p
= 10ms, T
vj
= 125C
I
2
t
450
A
2
s
Isolations-Prfspannung
insulation test voltage
RMS, f= 50Hz, t= 1min.
V
ISOL
2,5
kV
Charakteristische Werte / Characteristic values
Transistor / Transistor
min.
typ.
max.
I
C
= 75A, V
GE
= 15V, T
vj
= 25C
-
1,95
2,45
V
I
C
= 75A, V
GE
= 15V, T
vj
= 125C
-
2,20
-
V
Gate-Schwellenspannung
gate threshold voltage
I
C
= 1,5mA, V
CE
= V
GE
, T
vj
= 25C
V
GE(th)
4,5
5,5
6,5
V
Eingangskapazitt
input capacitance
f= 1MHz, T
vj
= 25C, V
CE
= 25V, V
GE
= 0V
C
ies
-
3,3
-
nF
Rckwirkungskapazitt
reverse transfer capacitance
f= 1MHz, T
vj
= 25C, V
CE
= 25V, V
GE
= 0V
C
res
-
0,3
-
nF
V
CE
= 600V, V
GE
= 0V, T
vj
= 25C
-
1
500
A
V
CE
= 600V, V
GE
= 0V, T
vj
= 125C
-
1
-
mA
Gate-Emitter Reststrom
gate-emitter leakage current
V
CE
= 0V, V
GE
= 20V, T
vj
= 25C
I
GES
-
-
400
nA
prepared by: Andreas Vetter
date of publication: 2000-04-26
approved by: Michael Hornkamp
revision: 1
Kollektor-Dauergleichstrom
DC-collector current
V
CE sat
I
CES
Kollektor-Emitter Sttigungsspannung
collector-emitter saturation voltage
Kollektor-Emitter Reststrom
collector-emitter cut-off current
1 (8)
BSM 75 GB 60 DLC
2000-02-08
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
BSM 75 GB 60 DLC
Charakteristische Werte / Characteristic values
Transistor / Transistor
min.
typ.
max.
I
C
= 75A, V
CC
= 300V
V
GE
= 15V, R
G
= 3,0
, T
vj
= 25C
t
d,on
-
63
-
ns
V
GE
= 15V, R
G
= 3,0
, T
vj
= 125C
-
65
-
ns
I
C
= 75A, V
CC
= 300V
V
GE
= 15V, R
G
= 3,0
, T
vj
= 25C
t
r
-
22
-
ns
V
GE
= 15V, R
G
= 3,0
, T
vj
= 125C
-
25
-
ns
I
C
= 75A, V
CC
= 300V
V
GE
= 15V, R
G
= 3,0
, T
vj
= 25C
t
d,off
-
155
-
ns
V
GE
= 15V, R
G
= 3,0
, T
vj
= 125C
-
170
-
ns
I
C
= 75A, V
CC
= 300V
V
GE
= 15V, R
G
= 3,0
, T
vj
= 25C
t
f
-
20
-
ns
V
GE
= 15V, R
G
= 3,0
, T
vj
= 125C
-
35
-
ns
I
C
= 75A, V
CC
= 300V, V
GE
= 15V
R
G
= 3,0
, T
vj
= 125C, L
= 30nH
I
C
= 75A, V
CC
= 300V, V
GE
= 15V
R
G
= 3,0
, T
vj
= 125C, L
= 30nH
t
P
10sec, V
GE
15V
T
vj
125C, V
CC
=360V, V
CEmax
= V
CES
-L
CE
di/dt
Modulinduktivitt
stray inductance module
L
CE
-
40
-
nH
Modul-Leitungswiderstand, Anschlsse - Chip
lead resistance, terminals - chip
T
c
= 25C
R
CC'+EE'
-
1,2
-
m
Charakteristische Werte / Characteristic values
Diode / Diode
min.
typ.
max.
Durchlaspannung
I
F
= 75A, V
GE
= 0V, T
vj
= 25C
-
1,25
1,6
V
forward voltage
I
F
= 75A, V
GE
= 0V, T
vj
= 125C
-
1,20
-
V
I
F
= 75A, -di
F
/dt= 3000A/sec
V
R
= 300V, V
GE
= -10V, T
vj
= 25C
I
RM
-
95
-
A
V
R
= 300V, V
GE
= -10V, T
vj
= 125C
-
115
-
A
I
F
= 75A, -di
F
/dt= 3000A/sec
V
R
= 300V, V
GE
= -10V, T
vj
= 25C
Q
r
-
5,1
-
C
V
R
= 300V, V
GE
= -10V, T
vj
= 125C
-
7,9
-
C
I
F
= 75A, -di
F
/dt= 3000A/sec
V
R
= 300V, V
GE
= -10V, T
vj
= 25C
E
rec
-
-
-
mJ
V
R
= 300V, V
GE
= -10V, T
vj
= 125C
-
2,3
-
mJ
Abschaltenergie pro Puls
reverse recovery energy
A
V
F
Rckstromspitze
peak reverse recovery current
Sperrverzgerungsladung
recoverred charge
I
SC
-
340
mJ
-
0,7
-
mJ
-
2,4
-
Abschaltverlustenergie pro Puls
turn-off energy loss per pulse
Einschaltverzgerungszeit (ind. Last)
turn on delay time (inductive load)
Anstiegszeit (induktive Last)
rise time (inductive load)
Abschaltverzgerungszeit (ind. Last)
turn off delay time (inductive load)
Kurzschluverhalten
SC Data
Fallzeit (induktive Last)
fall time (inductive load)
E
off
E
on
Einschaltverlustenergie pro Puls
turn-on energy loss per pulse
-
2 (8)
BSM 75 GB 60 DLC
2000-02-08
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
BSM 75 GB 60 DLC
Thermische Eigenschaften / Thermal properties
min.
typ.
max.
-
-
0,35
K/W
-
-
0,66
K/W
bergangs-Wrmewiderstand
thermal resistance, case to heatsink
pro Modul / per module
Paste
= 1W/m*K /
grease
= 1W/m*K
R
thCK
-
0,03
-
K/W
Hchstzulssige Sperrschichttemperatur
maximum junction temperature
T
vj
-
-
150
C
Betriebstemperatur
operation temperature
T
op
-40
-
125
C
Lagertemperatur
storage temperature
T
stg
-40
-
125
C
Mechanische Eigenschaften / Mechanical properties
5
Nm
-15
+15
%
Schraube M6
screw M6
M1
g
180
G
Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert.
Sie gilt in Verbindung mit den zugehrigen Technischen Erluterungen.
This technical information specifies semiconductor devices but promises no characteristics.
It is valid in combination with the belonging technical notes.
R
thJC
Innerer Wrmewiderstand
thermal resistance, junction to case
Gewicht
weight
Transistor / transistor, DC
Diode / diode, DC
Gehuse, siehe Anlage
case, see appendix
Innere Isolation
internal insulation
Anzugsdrehmoment fr mech. Befestigung
mounting torque
CTI
comperative tracking index
Kriechstrecke
creepage insulation
Luftstrecke
clearance
mm
8,5
mm
15
275
Al
2
O
3
3 (8)
BSM 75 GB 60 DLC
2000-02-08
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
BSM 75 GB 60 DLC
I
C
[A]
V
CE
[V]
I
C
[A]
V
CE
[V]
0
25
50
75
100
125
150
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
Tvj = 25C
Tvj = 125C
Ausgangskennlinie (typisch) I
C
= f (V
CE
)
Output characteristic (typical)
V
GE
= 15V
0
25
50
75
100
125
150
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
4,5
5,0
VGE = 8V
VGE = 9V
VGE = 10V
VGE = 12V
VGE = 15V
VGE = 20V
Ausgangskennlinienfeld (typisch) I
C
= f (V
CE
)
Output characteristic (typical)
T
vj
= 125C
4 (8)
BSM 75 GB 60 DLC
2000-02-08
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
BSM 75 GB 60 DLC
I
C
[A]
V
GE
[V]
I
F
[A]
V
F
[V]
0
25
50
75
100
125
150
5
6
7
8
9
10
11
12
13
Tvj = 25C
Tvj = 125C
bertragungscharakteristik (typisch) I
C
= f (V
GE
)
Transfer characteristic (typical)
V
CE
= 20V
0
25
50
75
100
125
150
0,0
0,2
0,4
0,6
0,8
1,0
1,2
1,4
1,6
Tvj = 25C
Tvj = 125C
Durchlakennlinie der Inversdiode (typisch) I
F
= f (V
F
)
Forward characteristic of inverse diode (typical)
5 (8)
BSM 75 GB 60 DLC
2000-02-08
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
BSM 75 GB 60 DLC
E [
m
J
]
I
C
[A]
E [
m
J
]
R
G
[
]
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
4,5
5,0
0
25
50
75
100
125
150
Eon
Eoff
Erec
Schaltverluste (typisch) E
on
= f (I
C
), E
off
= f (I
C
), E
rec
= f (I
C
)
Switching losses (typical)
R
G,on
= 3,0
,
,
,
,
=
=
=
=
R
G,off
= 3,0
, V
CC
= 300V, T
vj
= 125C
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
4,5
5,0
0
5
10
15
20
25
30
Eon
Eoff
Erec
Schaltverluste (typisch) E
on
= f (R
G
), E
off
= f (R
G
), E
rec
= f (R
G
)
Switching losses (typical)
I
C
= 75A , V
CC
= 300V , T
vj
= 125C
6 (8)
BSM 75 GB 60 DLC
2000-02-08
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
BSM 75 GB 60 DLC
Z
th
JC
[
K
/ W
]
t [sec]
i
1
2
3
4
r
i
[K/kW]
: IGBT
14,8
183,4
123,4
28,4
i
[sec]
: IGBT
0,0018
0,0240
0,0651
0,6626
r
i
[K/kW]
: Diode
232,6
223,1
140,1
64,2
i
[sec]
: Diode
0,0487
0,0169
0,1069
0,9115
I
C
[A]
V
CE
[V]
Sicherer Arbeitsbereich (RBSOA)
Reverse bias safe operation area (RBSOA)
V
GE
= +15V, R
G,off
= 3,0
,
,
,
,
T
vj
= 125C
Transienter Wrmewiderstand Z
thJC
= f (t)
Transient thermal impedance
0
25
50
75
100
125
150
175
0
100
200
300
400
500
600
700
IC,Modul
IC,Chip
0,001
0,01
0,1
1
0,001
0,01
0,1
1
10
Zth:IGBT
Zth:Diode
7 (8)
BSM 75 GB 60 DLC
2000-02-08
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
BSM 75 GB 60 DLC
Gehusemae / Schaltbild
Package outline / Circuit diagram
13
10
2,8 x 0,5
M5
6
17
23
17
80
94
6
23
6
7
3
5
4
1
2
1
2
3
7
6
5
4
8 (8)
BSM 75 GB 60 DLC
2000-02-08
PDF 
ZIP