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Электронный компонент: DD400S16K4

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European Power-
Semiconductor and
Electronics Company
Marketing Information
DD 400 S 16 K4
Feb.97
2,5 deep
7
E1
C2
C1
E2
M8
61,5
18
31,5
57
2,5 deep
130
114
screwing depth
max. 16
E1
C1
C2
E2
DD 400 S 16 K4
Elektrische Eigenschaften
Electrical properties
Hchstzulssige Werte
Maximum rated values
Periodische Spitzensperrspannung repetitive peak reverse voltage
t
vj
= 25C
V
RRM
1600
V
Dauergleichstrom
DC forward current
I
F
400
A
Periodischer Spitzenstrom
repetitive peak forward current
t
p
= 1 ms
I
FRM
800
A
Isolations-Prfspannung
insulation test voltage
RMS, f=50 Hz, t=1 min.
V
ISOL
3,4
kV
Charakteristische Werte
Characteristic values
min.
typ.
max.
Durchlaspannung
forward voltage
t
vj
= 25C, i
F
= 400 A
v
F
-
2,4
2,8
V
t
vj
= 125C, i
F
= 400 A
-
2,2
-
V
Sperrstrom
reverse current
v
CE
= 1200 V, tvj = 25C
i
R
-
4
-
mA
v
CE
= 1200 V, tvj = 125C
-
15
-
mA
Rckstromspitze
peak reverse recovery current
i
F
=400 A, -di
F
/dt=400 A/s I
RM
v
RM
= 900V, t
vj
=25C
-
35
-
A
v
RM
= 900V, t
vj
=125C
-
65
-
A
Sperrverzgerungsladung
recovered charge
i
F
=400 A, -di
F
/dt=400 A/s Q
r
v
RM
= 900V, t
vj
=25C
-
10
-
As
v
RM
= 900V, t
vj
=125C
-
40
-
As
Thermische Eigenschaften
Thermal properties
Innerer Wrmewiderstand
thermal resistance, junction
pro Modul/per module, DC R
thJC
0,05 C/W
to case
pro Zweig/per arm,
DC
0,10 C/W
bergangs-Wrmewiderstand
thermal resistance, case to heatsink pro Modul/per module
R
thCK
typ. 0,01 C/W
pro Zweig/per arm
typ. 0,02 C/W
Hchstzul.Sperrschichttemperatur
max. junction temperature
t
vj max
150
C
Betriebstemperatur
operating temperature
t
c op
-40...+125
C
Lagertemperatur
storage temperature
t
stg
-40...+125
C
Mechanische Eigenschaften
Mechanical properties
Innere Isolation
internal insulation
Al
2
0
3
Anzugsdrehmoment fr
mechanische Befestigung
mounting torque
M1
3
Nm
Anzugsdrehmoment fr elektrische
Anschlsse
terminal connection torque
terminals M8
M2
8...10
Nm
Gewicht
weight
G
ca. 1500
g
DD 400 S 16 K4
v
F
[V]
800
700
600
500
400
300
200
100
0
3,5
3
2,5
2
1,5
1
0,5
0
DD 400 S 16 K4 / 1
i
F
[A]
Bild / Fig. 1
Durchlakennlinie pro Zweig (typisch)
Forward charcteristic per arm (typical)
tvj = 25 C
tvj = 125 C
DD 400 S 16 K4 / 2
10
0
10
-2
10
-3
2 3 4 5 7
2 3 4 5 7
2 3 4 5 7
2 3 4 5 7
Z
(th)JC
[C/W]
t [s]
10
-3
10
-2
10
-1
10
0
10
1
Diode
Bild / Fig. 2
Transienter innerer Wrmewiderstand pro Zweig (DC)
Transient thermal impedance per arm (DC)
10
-1
2
3
5
8
2
3
2
3
5
8