Technische Information / Technical Information
IGBT-Module
IGBT-Modules
FB15R06KL4
Vorlufig
Preliminary
Elektrische Eigenschaften / Electrical properties
Hchstzulssige Werte / Maximum rated values
Diode Gleichrichter/ Diode Rectifier
Periodische Rckw. Spitzensperrspannung
repetitive peak reverse voltage
T
vj
=25C
V
RRM
800
V
Durchlastrom Grenzeffektivwert pro Chip
RMS forward current per chip
T
C
=80C
I
FRMSM
58
A
Gleichrichter Ausgang Grenzeffektivstrom
maximum RMS current at Rectifier output
T
C
=80C
I
RMSmax
96
A
Stostrom Grenzwert
t
P
= 10 ms, T
vj
= 25C
I
FSM
448
A
surge forward current
t
P
= 10 ms, T
vj
= 150C
358
A
Grenzlastintegral
t
P
= 10 ms, T
vj
= 25C
I
2
t
1000
A
2
s
I
2
t - value
t
P
= 10 ms, T
vj
= 150C
642
A
2
s
Transistor Wechselrichter/ Transistor Inverter
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
T
vj
=25C
V
CES
600
V
Kollektor-Dauergleichstrom
T
C
= 65C
I
C,nom.
15
A
DC-collector current
T
C
= 25 C
I
C
19
A
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
t
P
= 1 ms, T
C
=80C
I
CRM
30
A
Gesamt-Verlustleistung
total power dissipation
T
C
= 25C
P
tot
60
W
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
V
GES
+/- 20V
V
Diode Wechselrichter/ Diode Inverter
Dauergleichstrom
DC forward current
I
F
15
A
Periodischer Spitzenstrom
repetitive peak forw. current
t
P
= 1 ms
I
FRM
30
A
Grenzlastintegral
I
2
t - value
V
R
= 0V, t
p
= 10ms, T
vj
= 125C
I
2
t
25
A
2
s
prepared by: Thomas Passe
date of publication: 2002-02-13
approved by: Ingo Graf
revision: 4
1(11)
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
FB15R06KL4
Vorlufig
Preliminary
Modul Isolation/ Module Isolation
Isolations-Prfspannung
insulation test voltage
RMS, f = 50 Hz, t = 1 min.
NTC connected to Baseplate
V
ISOL
2,5
kV
Elektrische Eigenschaften / Electrical properties
Charakteristische Werte / Characteristic values
Diode Gleichrichter/ Diode Rectifier
min.
typ. max.
Durchlaspannung
forward voltage
T
vj
= 150C, I
F
= 15 A
V
F
-
0,8
-
V
Schleusenspannung
threshold voltage
T
vj
= 150C
V
(TO)
-
0,61
-
V
Ersatzwiderstand
slope resistance
T
vj
= 150C
r
T
-
11
-
m
W
Sperrstrom
reverse current
T
vj
= 150C, V
R
= 800 V
I
R
-
5
-
mA
Modul Leitungswiderstand, Anschlsse-Chip
lead resistance, terminals-chip
T
C
= 25C
R
AA'+CC'
-
4
-
m
W
Transistor Wechselrichter/ Transistor Inverter
min.
typ. max.
Kollektor-Emitter Sttigungsspannung
V
GE
= 15V, T
vj
= 25C, I
C
= 15 A
V
CE sat
-
1,95
2,55
V
collector-emitter saturation voltage
V
GE
= 15V, T
vj
= 125C, I
C
= 15 A
-
2,2
-
V
Gate-Schwellenspannung
gate threshold voltage
V
CE
= V
GE
, T
vj
= 25C, I
C
= 0,4mA
V
GE(TO)
4,5
5,5
6,5
V
Eingangskapazitt
input capacitance
f = 1MHz, T
vj
= 25C
V
CE
= 25 V, V
GE
= 0 V
C
ies
-
0,8
-
nF
Kollektor-Emitter Reststrom
collector-emitter cut-off current
Gate-Emitter Reststrom
gate-emitter leakage current
V
CE
= 0V, V
GE
=20V, T
vj
=25C
I
GES
-
-
400
nA
Einschaltverzgerungszeit (ind. Last)
I
C
= I
Nenn
, V
CC
= 300 V
turn on delay time (inductive load)
V
GE
= 15V, T
vj
= 25C, R
G
= 68 Ohm
t
d,on
-
37
-
ns
V
GE
= 15V, T
vj
= 125C, R
G
= 68 Ohm
-
34
-
ns
Anstiegszeit (induktive Last)
I
C
= I
Nenn
, V
CC
= 300 V
rise time (inductive load)
V
GE
= 15V, T
vj
= 25C, R
G
= 68 Ohm
t
r
-
37
-
ns
V
GE
= 15V, T
vj
= 125C, R
G
= 68 Ohm
-
37
-
ns
Abschaltverzgerungszeit (ind. Last)
I
C
= I
Nenn
, V
CC
= 300 V
turn off delay time (inductive load)
V
GE
= 15V, T
vj
= 25C, R
G
= 68 Ohm
t
d,off
-
216
-
ns
V
GE
= 15V, T
vj
= 125C, R
G
= 68 Ohm
-
223
-
ns
Fallzeit (induktive Last)
I
C
= I
Nenn
, V
CC
= 300 V
fall time (inductive load)
V
GE
= 15V, T
vj
= 25C, R
G
= 68 Ohm
t
f
-
17
-
ns
V
GE
= 15V, T
vj
= 125C, R
G
= 68 Ohm
-
26
-
ns
Einschaltverlustenergie pro Puls
I
C
= I
Nenn
, V
CC
= 300 V
turn-on energy loss per pulse
V
GE
= 15V, T
vj
= 125C, R
G
= 68 Ohm
E
on
-
0,6
-
mWs
L
S
= 80 nH
Abschaltverlustenergie pro Puls
I
C
= I
Nenn
, V
CC
= 300 V
turn-off energy loss per pulse
V
GE
= 15V, T
vj
= 125C, R
G
= 68 Ohm
E
off
-
0,4
-
mWs
L
S
= 80 nH
Kurzschluverhalten
t
P
10s, V
GE
15V, R
G
= 68 Ohm
SC Data
T
vj
125C, V
CC
=
360 V
I
SC
-
60
-
A
-
mA
V
GE
= 0V, T
vj
=125C, V
CE
= 600V
I
CES
-
5,0
2(11)
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
FB15R06KL4
Vorlufig
Preliminary
Elektrische Eigenschaften / Electrical properties
Charakteristische Werte / Characteristic values
min.
typ. max.
Modulinduktivitt
stray inductance module
L
sCE
-
-
40
nH
Modul Leitungswiderstand, Anschlsse-Chip
lead resistance, terminals-chip
T
C
= 25C
R
CC'+EE'
-
13
-
m
W
Diode Wechselrichter/ Diode Inverter
min.
typ. max.
Durchlaspannung
V
GE
= 0V, T
vj
= 25C, I
F
= 15 A
V
F
-
1,75
2,15
V
forward voltage
V
GE
= 0V, T
vj
= 125C, I
F
= 15 A
-
1,8
-
V
Rckstromspitze
I
F
=I
Nenn
, - di
F
/dt = 600 A/us
peak reverse recovery current
V
GE
= -10V, T
vj
= 25C, V
R
= 300 V
I
RM
-
13
-
A
V
GE
= -10V, T
vj
= 125C, V
R
= 300 V
-
14
-
A
Sperrverzgerungsladung
I
F
=I
Nenn
, - di
F
/dt = 600 A/us
recovered charge
V
GE
= -10V, T
vj
= 25C, V
R
= 300 V
Q
r
-
0,7
-
As
V
GE
= -10V, T
vj
= 125C, V
R
= 300 V
-
1,2
-
As
Abschaltenergie pro Puls
I
F
=I
Nenn
, - di
F
/dt = 600 A/us
reverse recovery energy
V
GE
= -10V, T
vj
= 25C, V
R
= 300 V
E
rec
-
0,14
-
mWs
V
GE
= -10V, T
vj
= 125C, V
R
= 300 V
-
0,24
-
mWs
NTC-Widerstand/ NTC-Thermistor
min.
typ. max.
Nennwiderstand
T
C
= 25C
R
25
-
5
-
k
W
Abweichung von R
100
deviation of R
100
T
C
= 100C, R
100
= 493
W
DR/R
-5
5
%
Verlustleistung
power dissipation
T
C
= 25C
P
25
20
mW
B-Wert
B-value
R
2
= R
1
exp [B(1/T
2
- 1/T
1
)]
B
25/50
3375
K
3(11)
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
FB15R06KL4
Vorlufig
Preliminary
Thermische Eigenschaften / Thermal properties
min.
typ. max.
Innerer Wrmewiderstand
Gleichr. Diode/ Rectif. Diode
l
Paste
=1W/m*K
R
thJH
-
1,1
-
K/W
thermal resistance, junction to heatsink
Trans. Wechsr./ Trans. Inverter
l
grease
=1W/m*K
-
2,4
-
K/W
Diode Wechsr./ Diode Inverter
-
4,0
-
K/W
Innerer Wrmewiderstand
Gleichr. Diode/ Rectif. Diode
R
thJC
-
-
1
K/W
thermal resistance, junction to case
Trans. Wechsr./ Trans. Inverter
-
-
2
K/W
Diode Wechsr./ Diode Inverter
-
-
2,9
K/W
bergangs-Wrmewiderstand
Gleichr. Diode/ Rectif. Diode
l
Paste
=1W/m*K
R
thCH
-
0,2
-
K/W
thermal resistance, case to heatsink
Trans. Wechsr./ Trans. Inverter
l
grease
=1W/m*K
-
0,6
-
K/W
Diode Wechsr./ Diode Inverter
-
1,4
-
K/W
Hchstzulssige Sperrschichttemperatur
maximum junction temperature
T
vj
-
-
150
C
Betriebstemperatur
operation temperature
T
op
-40
-
125
C
Lagertemperatur
storage temperature
T
stg
-40
-
125
C
Mechanische Eigenschaften / Mechanical properties
Innere Isolation
internal insulation
Al
2
O
3
CTI
comperative tracking index
225
Anprekraft f. mech. Befestigung pro Feder
F
N
mounting force per clamp
Gewicht
weight
G
36
g
Kriechstrecke
creeping distance
13,5
mm
Luftstrecke
clearance
12
mm
Kriechstrecke
creeping distance
7,5
mm
Luftstrecke
clearance
7,5
mm
Terminal - Terminal
terminal to terminal
40...80
Kontakt - Khlkrper
terminal to heatsink
4(11)
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
FB15R06KL4
Vorlufig
Preliminary
I
C
[A]
V
CE
[V]
I
C
[A]
V
CE
[V]
Ausgangskennlinienfeld Wechselr. (typisch) I
C
= f (V
CE
)
Output characteristic Inverter (typical)
V
GE
= 15 V
0
5
10
15
20
25
30
0,00
0,50
1,00
1,50
2,00
2,50
3,00
3,50
4,00
4,50
5,00
Tj = 25C
Tj = 125C
0
5
10
15
20
25
30
0,00
0,50
1,00
1,50
2,00
2,50
3,00
3,50
4,00
4,50
5,00
VGE = 8V
VGE = 9V
VGE = 10V
Vge=12V
Vge=15V
Vge=20V
Ausgangskennlinienfeld Wechselr. (typisch)
I
C
= f (V
CE
)
Output characteristic Inverter (typical)
T
vj
= 125C
5(11)
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