FF 600 R 12 KF 4
Hchstzulssige Werte / Maximum rated values
Elektrische Eigenschaften / Electrical properties
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
V
CES
1200 V
Kollektor-Dauergleichstrom
DC-collector current
I
C
600 A
Periodischer Kollektor Spitzenstrom
repetitive peak collctor current
t
p
=1 ms
I
CRM
1200 A
Gesamt-Verlustleistung
total power dissipation
t
C
=25C, Transistor /transistor
P
tot
3900 W
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
V
GE
20 V
Dauergleichstrom
DC forward current
I
F
600 A
Periodischer Spitzenstrom
repetitive peak forw. current
t
p
=1ms
I
FRM
1200 A
Isolations-Prfspannung
insulation test voltage
RMS, f=50 Hz, t= 1 min.
V
ISOL
2,5 kV
Charakteristische Werte / Characteristic values: Transistor
min.
typ.
max.
Kollektor-Emitter Sttigungsspannung
collector-emitter saturation voltage
i
C
=600A, v
GE
=15V, t
vj
=25C
v
CE sat
-
2,7
3,2 V
i
C
=600A, v
GE
=15V, t
vj
=125C
-
3,3
3,9 V
Gate-Schwellenspannung
gate threshold voltage
i
C
=24mA, v
CE
=v
GE
, t
vj
=25C
v
GE(th)
4,5
5,5
6,5 V
Eingangskapazitt
input capacity
f
O
=1MHz,t
vj
=25C,v
CE
=25V, v
GE
=0V
C
ies
-
45
- nF
Kollektor-Emitter Reststrom
collector-emitter cut-off current
v
CE
=1200V, v
GE
=0V, t
vj
=25C
i
CES
-
8
- mA
v
CE
=1200V, v
GE
=0V, t
vj
=125C
-
50
- mA
Gate-Emitter Reststrom
gate leakage current
v
CE
=0V, v
GE
=20V, t
vj
=25C
i
GES
-
-
400 nA
Emitter-Gate Reststrom
gate leakage current
v
CE
=0V, v
EG
=20V, t
vj
=25C
i
EGS
-
-
400 nA
Einschaltzeit (induktive Last)
turn-on time (inductive load)
i
C
=600A,v
CE
=600V,v
L
=15V,R
G
=1,6 ,t
vj
= 25C t
on
-
0,7
- s
i
C
=600A,v
CE
=600V,v
L
=15V,R
G
=1,6 ,t
vj
=125C
-
0,8
- s
Speicherzeit (induktive Last)
storage time (inductive load)
i
C
=600A,v
CE
=600V,v
L
=15V,R
G
=1,6 ,t
vj
= 25C t
s
-
0,9
- s
i
C
=600A,v
CE
=600V,v
L
=15V,R
G
=1,6 ,t
vj
=125C
-
1,0
- s
Fallzeit (induktive Last)
fall time (inductive load)
i
C
=600A,v
CE
=600V,v
L
=15V,R
G
=1,6 ,t
vj
= 25C t
f
-
0,10
- s
i
C
=600A,v
CE
=600V,v
L
=15V,R
G
=1,6 ,t
vj
=125C
-
0,15
- s
Einschaltverlustenergie pro puls
turn-on energie per pulse
i
C
=600A, v
CE
=600V, L
s
=70nH
E
on
v
L
=15V, R
G
=1,6 , t
vj
=125C
-
90
- mWs
Abschaltverlustenergie pro Puls
turn-off energie loss per pulse
i
C
=600A, v
CE
=600V, L
s
=70nH
E
off
v
L
=15V, R
G
=1,6 , t
vj
=125C
-
90
- mWs
Charakteristische Werte / Characteristic values
Inversdiode / Inverse diode
Durchlaspannung
forward voltage
i
F
=600A, v
GE
=0V, t
vj
=25C
v
F
-
2,2
2,7 V
i
F
=600A, v
GE
=0V, t
vj
=125C
-
2,0
2,5 V
Rckstromspitze
peak reverse recovery current
i
F
=600A, v
RM
=600V, v
EG
= 10V
I
RM
-di
F
/dt = 3,0 kA/s, t
vj
= 25C
-
200
- A
-di
F
/dt = 3,0 kA/s, t
vj
= 125C
-
350
- A
Sperrverzgerungsladung
recovered charge
i
F
=600A, v
RM
=600V, v
EG
= 10V
Q
r
-di
F
/dt = 3,0 kA/s, t
vj
= 25C
-
25
- As
-di
F
/dt = 3,0 kA/s, t
vj
= 125C
-
75
- As
Thermische Eigenschaften / Thermal properties
Innerer Wrmewiderstand
thermal resistance, junction to case Transistor / transistor, DC
R
thJC
0,016 C/W
Transistor,DC,pro Zweig/per arm
0,032 C/W
Diode, DC, pro Modul/per module
0,032 C/W
Diode, DC, pro Zweig/per arm
0,064 C/W
bergangs-Wrmewiderstand
thermal resistance, case to heatsink pro Modul / per Module
R
thCK
0,008 C/W
pro Zweig / per arm
0,016 C/W
Hchstzul. Sperrschichttemperatur
max. junction temperature
pro Modul / per Module
t
vj max
150 C
Betriebstemperatur
operating temperature
Transistor / transistor
t
c op
-40...+150 C
Lagertemperatur
storage temperature
t
stg
-40...+125 C
Mechanische Eigenschaften / Mechanical properties
Gehuse, siehe Anlage
case, see appendix
Seite / page
1
Innere Isolation
internal insulation
AI
2
O
3
Anzugsdrehmoment f. mech. Befestigung
mounting torque
terminals M6 /
tolerance +/-15%
M1
5 Nm
Anzugsdrehmoment f. elektr. Anschlsse
terminal connection torque
terminals M4 /
tolerance +/-15%
M2
2 Nm
terminals M8
8...10 Nm
Gewicht
weight
G
ca. 1500 g
Bedingung fr den Kurzschluschutz / Conditions for short-circuit protection
t
fg
= 10 s
V
CC
= 750 V
v
L
= 15 V
v
CEM
= 900 V
R
GF
= R
GR
= 1,6
i
CMK1
5000 A
t
vj
= 125C
i
CMK2
4000 A
Unabhngig davon gilt bei abweichenden Bedingungen / with regard to other conditions
CEM
= V
CES
- 20nH x |di
c
/dt|
Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den
zugehrigen Technischen Erluterungen. This technical information specifies semiconductor devices but promises no characteristics. It is valid in
combination with the belonging technical notes.
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