vorlufige Daten
preliminary data
T
C
=
70 C
I
C,nom.
20
A
T
C
=
25 C
I
C
26
A
min.
typ.
max.
-
1,95
2,55
V
-
2,20
-
V
date of publication:
2002-12-17
revision: 2.0
V
CE
= 0V, V
GE
= 20V, T
vj
= 25C
reverse transfer capacitance
mA
V
CE
=
Q
G
600 V, V
GE
= 0V, T
vj
= 25C
Rckwirkungskapazitt
V
CE
= V
GE
, T
vj
= 25C, I
C
= 0,5
nF
-
0,08
f= 1MHz, T
vj
= 25C, V
CE
= 25V, V
GE
= 0V
-
C
res
prepared by: P. Kanschat
Kollektor Emitter Reststrom
approved: M. Hierholzer
collector emitter cut off current
V
GES
repetitive peak forward current
V
CEsat
Charakteristische Werte / characteristic values
Periodischer Spitzenstrom
V
R
= 0V, t
p
= 10ms, T
vj
= 125C
Isolations Prfspannung
RMS, f= 50Hz, t= 1min
Transistor Wechselrichter / transistor inverter
kV
V
CES
V
A
I
CRM
V
ISOL
V
As
W
A
Technische Information / technical information
FS20R06XL4
IGBT-Module
IGBT-Modules
V
GE
= 15V, T
vj
= 125C, I
C
= I
C,nom
Eingangskapazitt
input capacitance
f= 1MHz, T
vj
= 25C, V
CE
= 25V, V
GE
= 0V
gate charge
Gate Emitter Spitzenspannung
Gate Schwellenspannung
gate emitter peak voltage
Dauergleichstrom
Kollektor Emitter Sttigungsspannung
DC forward current
insulation test voltage
V
GE
= 15V, T
vj
= 25C, I
C
= I
C,nom
DC collector current
Hchstzulssige Werte / maximum rated values
Kollektor Emitter Sperrspannung
Kollektor Dauergleichstrom
collector emitter voltage
Elektrische Eigenschaften / electrical properties
T
vj
= 25 C
Periodischer Kollektor Spitzenstrom
P
tot
T
c
= 25C, Transistor
Gesamt Verlustleistung
total power dissipation
t
p
= 1ms, T
C
= 70
A
repetitive peak collector current
73
I
F
C
t
p
= 1ms
I
FRM
V
nF
0,9
-
0,11
-
C
5,5
6,5
-
-
4,5
-
-
I
GES
I
CES
nA
gate emitter leakage current
Gate Emitter Reststrom
-
400
It value
It
V
GE(th)
C
ies
Grenzlastintegral
collector emitter saturation voltage
Gateladung
V
GE
= -15V...+15V
gate threshold voltage
2,5
600
40
89
+20
20
40
-
5
mA
1 (8)
vorlufige Daten
preliminary data
Technische Information / technical information
FS20R06XL4
IGBT-Module
IGBT-Modules
min.
typ.
max.
I
C
=
20
13
-
20
-
ns
13
-
21
-
ns
I
C
=
20
13
-
7
-
ns
13
-
8
-
ns
I
C
=
20
13
-
80
-
ns
13
-
110
-
ns
I
C
=
20
13
-
18
-
ns
13
-
25
-
ns
I
C
=
20
R
G
= 13
15 nH
I
C
=
20
R
G
= 13
15 nH
V
CC
=
I
F
= 20
-
1,35
1,9
V
I
F
= 20
-
1,30
-
V
I
F
= 20
A/s
V
R
=
-
51
-
A
V
R
=
-
53
-
A
I
F
= 20
A/s
V
R
=
-
1,3
-
C
V
R
=
-
2,0
-
C
I
F
= 20
A/s
V
R
=
-
0,40
-
mJ
V
R
=
-
0,55
-
mJ
, T
vj
= 125C
, T
vj
= 125C, L
=
, T
vj
= 125C, L
=
360 V, V
CEmax
=V
CES
-L
CE
|di/dt|
300 V
A, V
CC
= 300 V
V
GE
= 15V, R
G
=
, T
vj
= 25C
V
GE
= 15V, R
G
=
, T
vj
= 125C
V
GE
= 15V, R
G
=
V
GE
= 15V, R
G
=
, T
vj
= 25C
A, V
CC
= 300 V
V
GE
= 15V, R
G
=
, T
vj
= 25C
V
GE
= 15V, R
G
=
, T
vj
= 125C
V
300
A, V
CC
= 300 V
, T
vj
= 125C
V
GE
= 15V, R
G
=
V
GE
= 15V, R
G
=
, T
vj
= 25C
Charakteristische Werte / characteristic values
Transistor Wechselrichter / transistor inverter
t
d,on
Anstiegszeit (induktive Last)
rise time (inductive load)
t
r
Einschaltverzgerungszeit (induktive Last)
turn on delay time (inductive load)
Abschaltverzgerungszeit (induktive Last)
turn off delay time (inductive load)
300 V
A, V
CC
=
V
F
forward voltage
Rckstromspitze
peak reverse recovery current
I
RM
Durchlassspannung
A, V
CC
=
t
f
A, V
CC
=
m
Charakteristische Werte / characteristic values
mJ
-
mJ
E
on
0,65
t
d,off
-
R
CC/EE
T
c
= 25C
SC data
Leitungswiderstand, Anschluss-Chip
lead resistance, terminal-chip
-
-
0,45
-
-
-
8
Q
r
E
rec
Diode Wechselrichter / diode inverter
Ausschaltenergie pro Puls
reverse recovery energy
turn off energy loss per pulse
Fallzeit (induktive Last)
fall time (inductive load)
Einschaltverlustenergie pro Puls
A
Kurzschlussverhalten
t
P
10sec, V
GE
15V, T
vj
= 125C,
I
SC
-
E
off
90
2700
300 V, V
GE
= -10V, T
vj
= 25C
300 V, V
GE
= -10V, T
vj
= 125C
A, -di
F
/dt =
A, -di
F
/dt =
300 V, V
GE
= -10V, T
vj
= 25C
stray inductance module
Modulinduktivitt
L
CE
turn on energy loss per pulse
Ausschaltverlustenergie pro Puls
2700
A, V
GE
= 0V, T
vj
= 125C
nH
-
25
-
Sperrverzgerungsladung
recovered charge
300 V, V
GE
= -10V, T
vj
= 125C
300 V, V
GE
= -10V, T
vj
= 125C
A, V
GE
= 0V, T
vj
= 25C
A, -di
F
/dt =
2700
300 V, V
GE
= -10V, T
vj
= 25C
2 (8)
vorlufige Daten
preliminary data
Technische Information / technical information
FS20R06XL4
IGBT-Module
IGBT-Modules
min.
typ.
max.
-
-
1,40
K/W
-
- 2,30
K/W
-
1,65
-
K/W
- 2,75
- K/W
-
0,45
-
K/W
-
0,75
-
K/W
R
thCH
thermal resistance, case to heatsink, DC
Diode Wechselrichter / diode inverter
Paste
= 1 W/m*K /
grease
= 1 W/m*K
g
weight
G
25
Gewicht
Innere Isolation
internal insulation
CTI
comperative tracking index
F
creepage distance
Abweichung von R
100
T
c
= 25C
P
25
power dissipation
R
thJH
thermal resistance, junction to heatsink; DC
Hchstzulssige Sperrschichttemp.
-
k
Thermische Eigenschaften / thermal properties
-5
-
5
Verlustleistung
T
c
= 100C, R
100
= 493
R/R
-
5
R
25
Wrmewiderstand; DC
Transistor Wechselr. / transistor inverter
Diode Wechselrichter / diode inverter
B-value
deviation of R
100
%
Charakteristische Werte / characteristic values
NTC-Widerstand / NTC-thermistor
Nennwiderstand
T
c
= 25C
rated resistance
mW
150
Mechanische Eigenschaften / mechanical properties
B-Wert
R
2
= R
1
exp[B(1/T
2
- 1/T
1
)]
B
25/50
-
3375
-
K
20
-
-
-40
-
-
-
C
C
terminal to terminal
Al
2
O
3
mm
-
125
20..50
storage temperature
operation temperature
maximum junction temperature
125
T
vjmax
T
op
T
stg
-40
Betriebstemperatur
Innerer Wrmewiderstand; DC
thermal resistance, junction to case; DC
Transistor Wechselr. / transistor inverter
Diode Wechselrichter / diode inverter
Lagertemperatur
Paste
= 1 W/m*K /
grease
= 1 W/m*K
bergangs-Wrmewiderstand, DC
Transistor Wechselr. / transistor inverter
Kriechstrecke
Anschluss - Khlkrper
Anschluss - Anschluss
10,5
Anschluss - Anschluss
Luftstrecke
Anschluss - Khlkrper
Anpresskraft pro Feder
mounting force per clamp
terminal to terminal
clearance distance
terminal to heatsink
mm
mm
5
mm
5
9
C
terminal to heatsink
N
R
thJC
225
3 (8)
vorlufige Daten
preliminary data
Technische Information / technical information
FS20R06XL4
IGBT-Module
IGBT-Modules
I
C
= f(V
CE
)
V
GE
= 15V
output characteristic (typical)
output characteristic (typical)
T
vj
= 125C
Ausgangskennlinienfeld (typisch)
I
C
= f(V
CE
)
Ausgangskennlinie (typisch)
0
10
20
30
40
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
V
CE
[V]
I
C
[A]
Tvj = 25C
Tvj = 125C
0
10
20
30
40
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
4,5
5,0
V
CE
[V]
I
C
[A]
VGE = 20V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 9V
VGE = 8V
4 (8)
vorlufige Daten
preliminary data
Technische Information / technical information
FS20R06XL4
IGBT-Module
IGBT-Modules
I
C
= f(V
GE
)
V
CE
= 20V
bertragungscharakteristik (typisch)
transfer characteristic (typical)
Durchlasskennlinie der Inversdiode (typisch)
I
F
= f(V
F
)
forward characteristic of inverse diode (typical)
0
10
20
30
40
5
6
7
8
9
10
11
12
13
V
GE
[V]
I
C
[A]
Tvj = 25C
Tvj = 125C
0
10
20
30
40
0,0
0,2
0,4
0,6
0,8
1,0
1,2
1,4
1,6
1,8
V
F
[V]
I
F
[A]
Tvj = 25C
Tvj = 125C
5 (8)
vorlufige Daten
preliminary data
Technische Information / technical information
FS20R06XL4
IGBT-Module
IGBT-Modules
E
on
= f(I
C
), E
off
= f(I
C
), E
rec
= f(I
C
)
V
GE
= 15V, R
Gon
=R
Goff
= 13
, V
CE
= 300V, T
vj
= 125C
E
on
= f (R
G
) , E
off
= f (R
G
) , E
rec
= f (R
G
)
V
GE
= 15V, I
C
= 20A, V
CE
= 300V, T
vj
= 125C
Schaltverluste (typisch)
switching losses (typical)
Schaltverluste (typisch)
switching losses (typical)
0
1
2
3
0
5
10
15
20
25
30
35
40
I
C
[A]
E [mJ]
Eon
Eoff
Erec
0
1
2
0
20
40
60
80
100
120
R
G
[
]
E [mJ]
Eon
Eoff
Erec
6 (8)
vorlufige Daten
preliminary data
Technische Information / technical information
FS20R06XL4
IGBT-Module
IGBT-Modules
Transienter Wrmewiderstand
transient thermal impedance
i
r
i
[K/kW]: IGBT
i
[s]: IGBT
r
i
[K/kW]: Diode
i
[s]: Diode
Sicherer Arbeitsbereich (RBSOA)
reverse bias safe operation area (RBSOA)
550,0
1540,0
495,0
0,00031
0,00508
0,10706
0,14371
Z
thJH
= f (t)
1
2
3
4
V
GE
=15V, T
j
=125C, R
G
= 13
99,0
330,0
924,0
297,0
0,00043
0,00942
0,11831
0,17410
165,0
0
20
40
0
200
400
600
V
CE
[V]
I
C
[A]
IC, Chip
IC, Modul
0,10
1,00
10,00
0,001
0,01
0,1
1
10
t (s)
Z
thJH
(K/W)
Zth:IGBT
Zth:Diode
7 (8)
vorlufige Daten
preliminary data
Technische Information / technical information
FS20R06XL4
IGBT-Module
IGBT-Modules
Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften
zugesichert. Sie gilt in Verbindung mit den zugehrigen technischen Erluterungen.
This technical information specifies semiconductor devices but promises no characteristics. It is valid with
the belonging technical notes.
Schaltbild
circuit diagram
Gehusemae
package outline
Bohrplan
drilling layout
8 (8)
PDF 
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