I
C, nom
1200
A
I
C
1700
A
min.
typ.
max.
-
1,7
2,15
V
-
2
t.b.d.
V
vorlufige Daten
T
vj
= 25C
preliminary data
-
-
400
5
gate emitter leakage current
Gate Emitter Reststrom
V
CE
= 0V, V
GE
= 20V, T
vj
= 25C
I
GES
gate threshold voltage
V
R
= 0V, t
p
= 10ms, T
vj
= 125C
Isolations Prfspannung
Grenzlastintegral
insulation test voltage
RMS, f= 50Hz, t= 1min.
Transistor Wechselrichter / transistor inverter
Kollektor Emitter Sttigungsspannung
I
C
= 1200A, V
GE
= 15V, T
vj
= 25C,
collector emitter satration voltage
V
GE(th)
C
ies
V
ISOL
6,5
2,5
A
-
V
nF
86
-
11,5
-
5,8
C
P
tot
A
DC forward current
+/- 20
T
c
= 25C; Transistor
I
F
1200
5,6
kW
V
GES
repetitive peak collector current
t
p
= 1ms, T
c
= 80C
Periodischer Kollektor Spitzenstrom
Dauergleichstrom
gate emitter peak voltage
V
300
k As
kV
nF
-
4
Hchstzulssige Werte / maximum rated values
Kollektor Emitter Sperrspannung
T
c
= 80C
Kollektor Dauergleichstrom
collector emitter voltage
Elektrische Eigenschaften / electrical properties
T
c
= 25C
DC collector current
repetitive peak forward current
date of publication: 2002-07-29
Gate Schwellenspannung
I
C
= 48mA, V
CE
= V
GE
, T
vj
= 25C,
Eingangskapazitt
Periodischer Spitzenstrom
Gesamt Verlustleistung
total power dissipation
Gate Emitter Spitzenspannung
V
CEsat
Charakteristische Werte / characteristic values
approved: SM TM; Christoph Lbke
Technische Information / technical information
FZ1200R12KE3
IGBT-Module
IGBT-Modules
V
CES
A
I
CRM
V
2400
1200
t
p
= 1ms
It value
I
FRM
2400
It
I
C
= 1200A, V
GE
= 15V, T
vj
= 125C,
input capacitance
f= 1MHz, T
vj
= 25C, V
CE
= 25V, V
GE
= 0V
revision: 2.0
prepared by: MOD-D2; Mark Mnzer
Rckwirkungskapazitt
reverse transfer capacitance
V
CE
= 1200V, V
GE
= 0V, T
vj
= 25C,
-
Kollektor Emitter Reststrom
collector emitter cut off current
I
CES
f= 1MHz, T
vj
= 25C, V
CE
= 25V, V
GE
= 0V
-
C
res
Gateladung
V
GE
= -15V...+15V; V
CE
=...V
Q
G
-
gate charge
mA
-
5
nA
1 (8)
DB_FZ1200R12KE3_2.0.xls
2002-07-29
vorlufige Daten
preliminary data
Technische Information / technical information
FZ1200R12KE3
IGBT-Module
IGBT-Modules
min.
typ.
max.
-
0,54
-
s
-
0,64
-
s
-
0,22
-
s
-
0,23
-
s
-
0,82
-
s
-
0,96
-
s
-
0,15
-
s
-
0,18
-
s
-
2,0
2,5
V
-
1,8
-
V
-
390
-
A
-
620
-
A
-
55
-
C
-
150
-
C
-
13
-
mJ
-
35
-
mJ
4800
-
A
-
nH
stray inductance module
Modulindiktivitt
L
sCE
-
12
V
GE
=15V, R
Goff
=0,62
W, T
vj
= 125C
Einschaltverlustenergie pro Puls
turn on energy loss per pulse
Ausschaltverlustenergie pro Puls
Fallzeit (induktive Last)
fall time (inductive load)
0,19
Q
r
Ausschaltenergie pro Puls
reverse recovery energy
E
rec
V
R
= 600V, V
GE
= -15V, T
vj
= 25C
V
R
= 600V, V
GE
= -15V, T
vj
= 125C
I
F
=I
C,nom
, -di
F
/dt= 4800A/s
Sperrverzgerungsladung
recoverred charge
I
F
=I
C,nom
, -di
F
/dt= 4800A/s
R
CC/EE
-
Kurzschlussverhalten
t
P
10s, V
GE
15V, T
Vj
125C
I
SC
-
SC data
V
CC
= 900V, V
CEmax
= V
CES
- L
sCE
di/dt
turn off energy loss per pulse
E
off
I
C
= 1200A, V
CC
= 600V, L
s
= 60nH
I
C
= 1200A, V
CC
= 600V, L
s
= 60nH
V
GE
=15V, R
Gon
=1,8
W, T
vj
= 125C
I
C
= 1200A, V
CC
= 600V
t
d,off
V
GE
=15V, R
Goff
=0,62
W, T
vj
=25C
V
GE
=15V, R
Goff
=0,62
W,T
vj
= 125C
I
C
= 1200A, V
CC
= 600V
V
GE
=15V, R
Goff
=0,62
W, T
vj
=25C
V
GE
=15V, R
Goff
=0,62
W,T
vj
= 125C
E
on
m
W
Charakteristische Werte / characteristic values
-
-
t
f
V
GE
=15V, R
Gon
=1,8
W, T
vj
=25C
V
GE
=15V, R
Gon
=1,8
W, T
vj
= 125C
-
t
d,on
t
r
Abschaltverzgerungszeit (ind. Last)
turn off delay time (inductive load)
V
R
= 600V, V
GE
= -15V, T
vj
= 125C
V
F
forward voltage
Rckstromspitze
peak reverse recovery current
I
RM
Leitungswiderstand, Anschluss-Chip
lead resistance, terminal-chip
T
c
= 25C
V
R
= 600V, V
GE
= -15V, T
vj
= 25C
I
F
=I
C,nom
, -di
F
/dt= 4800A/s
Durchlassspannung
Charakteristische Werte / characteristic values
I
F
= I
C, nom
, V
GE
= 0V, T
vj
= 25C
I
F
= I
C, nom
, V
GE
= 0V, T
vj
= 125C
Diode Wechselrichter / diode inverter
Transistor Wechselrichter / transistor inverter
Anstiegszeit (induktive Last)
rise time (inductive load)
Einschaltverzgerungszeit (ind. Last)
turn on delay time (inductive load)
V
GE
=15V, R
Gon
=1,8
W, T
vj
= 125C
I
C
= 1200A, V
CC
= 600V
V
GE
=15V, R
Gon
=1,8
W, T
vj
=25C
I
C
= 1200A, V
CC
= 600V
V
R
= 600V, V
GE
= -15V, T
vj
= 25C
V
R
= 600V, V
GE
= -15V, T
vj
= 125C
245
190
-
mJ
-
mJ
2 (8)
DB_FZ1200R12KE3_2.0.xls
2002-07-29
vorlufige Daten
preliminary data
Technische Information / technical information
FZ1200R12KE3
IGBT-Module
IGBT-Modules
min.
typ.
max.
R
thJC
-
-
0,022
K/W
R
thJC
-
-
0,040
K/W
mm
20
32
Kriechstrecke
creepage distance
Luftstrecke
clearance
maximum junction temperature
T
vj op
-40
-
C
150
-
-
Schraube /screw M5
Anschlsse / terminal M4
mm
M
comperative tracking index
Anschlsse / terminal M8
CTI
storage temperature
Anzugsdrehmoment, elektr. Anschlsse
M
This technical information specifies semiconductor devices but promises no characteristics. It is valid
with the belonging technical notes.
Mechanische Eigenschaften / mechanical properties
Nm
Anzugsdrehmoment, mech. Befestigung
mounting torque
Nm
8
-
10
Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine
Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehrigen technischen Erluterungen.
125
C
C
T
stg
-40
-
125
case, see appendix
terminal connection torque
Lagertemperatur
Thermische Eigenschaften / thermal properties
thermal resistance, case to heatsink
Hchstzulssige Sperrschichttemp.
T
vj max
Betriebstemperatur
Al
2
O
3
-
M
-
5,75
>400
4,25
1,7
g
weight
2,3
Nm
G
1500
Gewicht
R
thCK
pro Modul / per module
l
Paste
/
l
grease
=1W/m*K
bergangs Wrmewiderstand
internal insulation
Gehuse, siehe Anlage
operation temperature
Innere Isolation
pro Diode/per Diode, DC
thermal resistance, junction to case
Innerer Wrmewiderstand
pro Transistor /per transistor, DC
K/W
-
0,006
-
3 (8)
DB_FZ1200R12KE3_2.0.xls
2002-07-29
vorlufige Daten
preliminary data
Technische Information / technical information
FZ1200R12KE3
IGBT-Module
IGBT-Modules
Ausgangskennlinie (typisch)
I
C
= f(V
CE
)
output characteristic (typical)
T
vj
= 125C
output characteristic (typical)
V
GE
= 15V
Ausgangskennlinienfeld (typisch)
I
C
= f(V
CE
)
0
300
600
900
1200
1500
1800
2100
2400
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
V
CE
[V]
I
C
[A
]
Tvj = 25C
Tvj = 125C
0
300
600
900
1200
1500
1800
2100
2400
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
4,5
5,0
V
CE
[V]
I
C
[A
]
Vge=19V
Vge=17V
Vge=15V
Vge=13V
Vge=11V
Vge=9V
4 (8)
DB_FZ1200R12KE3_2.0.xls
2002-07-29
vorlufige Daten
preliminary data
Technische Information / technical information
FZ1200R12KE3
IGBT-Module
IGBT-Modules
bertragungscharakteristik (typisch)
transfer characteristic (typical)
I
C
= f(V
GE
)
V
CE
= 20V
Durchlasskennlinie der Inversdiode (typisch)
I
F
= f(V
F
)
forward caracteristic of inverse diode (typical)
0
300
600
900
1200
1500
1800
2100
2400
5
6
7
8
9
10
11
12
13
V
GE
[V]
I
C
[A
]
Tvj=25C
Tvj=125C
0
300
600
900
1200
1500
1800
2100
2400
0,0
0,2
0,4
0,6
0,8
1,0
1,2
1,4
1,6
1,8
2,0
2,2
2,4
2,6
V
F
[V]
I
F
[A
]
Tvj = 25C
Tvj = 125C
5 (8)
DB_FZ1200R12KE3_2.0.xls
2002-07-29
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