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Электронный компонент: MP7616KS

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MP7616
1
Rev. 2.00
FEATURES
Monolithic CMOS Construction
Full Four-Quadrant Multiplication
Excellent Stability Over Temperature and Time
TTL/5 V CMOS Compatible
Guaranteed Monotonic
15 V CMOS
16-Bit Multiplying
Digital-to-Analog Converter
Low Sensitivity to Output Amplifier Vos
Low Glitch Energy
Buffered Version: MP7626
5 V Version: MP7616B
GENERAL DESCRIPTION
The MP7616 is a high density 16-bit CMOS multiplying Digi-
tal-to-Analog Converter. Silicon nitride passivation and un-
trimmed silicon chromium resistors have been combined to pro-
vide long term stability and reliability. Using the most significant
bit (MSB) segmentation technique, the MP7616 features 13-bit
(0.012%) differential and 12-bit (0.01%) integral linearity.
To achieve 13-bit linearity without laser trim, the MP7616 digi-
tally decodes the four MSB's into 15 equal current sources,
rather than the standard binary-weighted sources. Each resis-
tor contributes only 1/16 full scale output thus reducing the
matching accuracy requirement of the resistor and CMOS
switches from 0.0015% to 0.024%.
The decoding technique achieves an eightfold improvement
in differential linearity stability over temperature, an eightfold im-
provement in relative accuracy due to aging effects (long term
stability), a fourfold improvement in glitch amplitude, and a ten-
fold reduction in sensitivity to output amplifier offset voltage.
SIMPLIFIED BLOCK DIAGRAM
4 to 15 Decoder
R
R
R
R
R
R
R
R
R
R
R
R
R
R
R
12-Bit
DAC
MSB
4
5
LSB
To 12-Bit DAC
To Switches
R
FB
I
OUT2
I
OUT1
V
DD
V
REF
GND
1
16
MP7616
2
Rev. 2.00
ORDERING INFORMATION
Package
Type
Temperature
Range
Part No.
Ceramic Dip
MP7616JD
Ceramic Dip
MP7616KD
Ceramic Dip
MP7616TD*
Plastic Dip
MP7616JN
Plastic Dip
MP7616KN
40 to +85
C
40 to +85
C
55 to +125
C
40 to +85
C
40 to +85
C
+14
+14
+7
+7
+7
+16
+16
+8
+8
+8
+0.8
+0.8
+0.8
+0.8
+0.8
SOIC
MP7616JS
SOIC
MP7616KS
40 to +85
C
40 to +85
C
+14
+7
+16
+8
+0.8
+0.8
INL
(LSB)
DNL
(LSB)
Gain Error
(% FSR)
*Contact factory for non-compliant military processing
PIN CONFIGURATION
1
2
3
4
5
6
7
8
9
10
22
21
20
19
18
17
16
15
14
13
11
12
22 Pin CDIP, PDIP (0.400")
D22, N22
BIT 3
BIT 4
BIT 5
BIT 6
BIT 7
BIT 8
BIT 9
BIT 10
BIT 11
BIT 12
BIT 13
BIT 2
BIT 1 (MSB)
BIT 16 (LSB)
BIT 15
BIT 14
GND
I
OUT2
I
OUT1
R
FB
V
REF
V
DD
24 Pin SOIC (Jedec, 0.300")
S24
BIT 2
BIT 1 (MSB)
BIT 16 (LSB)
BIT 15
BIT 14
GND
I
OUT2
I
OUT1
R
FB
V
REF
V
DD
BIT 3
BIT 4
BIT 5
BIT 6
BIT 7
BIT 8
BIT 9
BIT 10
BIT 11
BIT 12
BIT 13
24
1
13
12
2
3
4
5
6
7
15
14
17
16
8
9
19
18
10
11
23
22
21
20
N/C
N/C
See Packaging Section for Package Dimensions
1
N/C
No Connection
1
2
BIT 3
Data Input Bit 3
2
3
BIT 4
Data Input Bit 4
3
4
BIT 5
Data Input Bit 5
4
5
BIT 6
Data Input Bit 6
5
6
BIT 7
Data Input Bit 7
6
7
BIT 8
Data Input Bit 8
7
8
BIT 9
Data Input Bit 9
8
9
BIT 10
Data Input Bit 10
9
10
BIT 11
Data Input Bit 11
10
11
BIT 12
Data Input Bit 12
11
12
BIT 13
Data Input Bit 13
PIN OUT DEFINITIONS
DIP
NAME
DESCRIPTION
13
N/C
No Connection
12
14
BIT 14
Data Input Bit 14
13
15
BIT 15
Data Input Bit 15
14
16
BIT 16
Data Input Bit 16 (LSB)
15
17
V
DD
Positive Power Supply
16
18
V
REF
Reference Input Voltage
17
19
R
FB
Internal Feedback Resistor
18
20
I
OUT1
Current Output 1
19
21
I
OUT2
Current Output 2
20
22
GND
Ground
21
23
BIT 1
Data Input Bit 1 (MSB)
22
24
BIT 2
Data Input Bit 2
SOIC
DIP
NAME
DESCRIPTION
SOIC
MP7616
3
Rev. 2.00
ELECTRICAL CHARACTERISTICS
(V
DD
= + 15 V, V
REF
= +10 V unless otherwise noted)
25
C
Tmin to Tmax
Parameter
Symbol
Min
Typ
Max
Min
Max
Units
Test Conditions/Comments
STATIC PERFORMANCE
1
FSR = Full Scale Range
Resolution (All Grades)
N
16
16
Bits
Integral Non-Linearity
5
INL
LSB
Best Fit Straight Line Spec.
(Relative Accuracy)
(Max INL Min INL) / 2
J
+14
+14
K, T
+7
+7
Differential Non-Linearity
5
DNL
LSB
J
+16
+16
K, T
+8
+8
Gain Error
GE
+0.8
% FSR
Using Internal R
FB
Gain Temperature Coefficient
2
TC
GE
+2.0
ppm/
C
Gain/
Temperature
Non-Linearity Tempco
2
+0.5
ppm/
C
Differential Linearity Tempco
2
+0.5
ppm/
C
Power Supply Rejection Ratio
PSRR
+5
+50
+50
ppm/%
|
Gain/
V
DD
|
V
DD
= + 5%
Output Leakage Current
6
I
OUT
+1
+10
+200
nA
DYNAMIC PERFORMANCE
2
Current Settling Time
t
S
2
s
To 0.01% of FSR; all digital inputs
low to high and high to low
Feedthrough at I
OUT1
F
T
1
2
mV p-p
V
REF
= 10kHz, 20 Vp-p
REFERENCE INPUT
Input Resistance
R
IN
1
3
10
1
10
k
DIGITAL INPUTS
3
Logical "1" Voltage
V
IH
3.0
2.4
3.0
V
Logical "0" Voltage
V
IL
0.8
0.8
V
Input Leakage Current
I
LKG
+1.0
+1.0
A
ANALOG OUTPUTS
2
Output Capacitance
C
OUT1
100
pF
DAC Inputs all 1's
C
OUT1
50
pF
DAC Inputs all 0's
C
OUT2
50
pF
DAC Inputs all 1's
C
OUT2
100
pF
DAC Inputs all 0's
POWER SUPPLY
4
Functional Voltage Range
2
V
DD
4.5
15
16
4.5
16
V
Supply Current
I
DD
0.4
4
4
mA
All digital inputs = 0 V or all = 5 V
MP7616
4
Rev. 2.00
ELECTRICAL CHARACTERISTICS (CONT'D)
NOTES:
Specifications are subject to change without notice
1
Full Scale Range (FSR) is 10V for unipolar mode.
2
Guaranteed but not production tested.
3
Digital input levels should not go below ground or exceed the positive supply voltage, otherwise damage may occur.
4
Specified values guarantee functionality. Refer to other parameters for accuracy.
5
Linearity error is degraded by 65
V for every mV of voltage offset at output amplifier.
6
Output leakage current refers to I
OUT1
. One LSB of current constantly flows into I
OUT2
(30nA at 5k
input impedance,
V
REF
= +10 V) due to ladder termination into I
OUT2
.
ABSOLUTE MAXIMUM RATINGS (T
A
= +25
C unless otherwise noted)
1, 2
V
DD
to GND
0 to +17 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Digital Input Voltage to GND
GND 0.5 to V
DD
+0.5 V
. . . .
I
OUT1
, I
OUT2
to GND
GND 0.5 to V
DD
+0.5 V
. . . . . . . . . . .
V
REF
to GND
+25 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
V
RFB
to GND
+25 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature
65
C to +150
C
. . . . . . . . . . . . . . . . .
Lead Temperature (Soldering, 10 seconds)
+300
C
. . . . . .
Package Power Dissipation Rating to 75
C
CDIP, PDIP, SOIC
1000mW
. . . . . . . . . . . . . . . . . . . . . . . .
Derates above 75
C
13mW/
C
. . . . . . . . . . . . . . . . . . . . .
NOTES:
1
Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a
stress rating only and functional operation at or above this specification is not implied. Exposure to maximum rating
conditions for extended periods may affect device reliability.
2
Any input pin which can see a value outside the absolute maximum ratings
should be protected by Schottky diode clamps
(HP5082-2835) from input pin to the supplies.
APPLICATION NOTES
Refer to Section 8 for Applications Information
MP7616
5
Rev. 2.00
A
.225
5.72
b
0.014
0.023
0.356
0.584
b
1
0.038
0.065
0.965
1.65
2
c
0.008
0.015
0.203
0.381
D
1.111
28.22
4
E
0.350
0.410
8.89
10.41
4
E
1
0.390
0.420
9.91
10.67
7
e
0.100 BSC
2.54 BSC
5
L
0.125
0.200
3.18
5.08
L
1
0.150
3.81
Q
0.015
0.070
0.381
1.78
3
S
0.080
2.03
6
S
1
0.005
0.13
6
0
15
0
15
D
b
e
22 LEAD CERAMIC DUAL-IN-LINE
(400 MIL CDIP)
D22
SYMBOL
MIN
MAX
MIN
MAX
NOTES
INCHES
MILLIMETERS
S
NOTES
1.
Index area; a notch or a lead one identification mark
is located adjacent to lead one and is within the
shaded area shown.
2.
The minimum limit for dimension b
1
may be 0.023
(0.58 mm) for all four corner leads only.
3.
Dimension Q shall be measured from the seating
plane to the base plane.
4.
This dimension allows for off-center lid, meniscus and
glass overrun.
5.
The basic lead spacing is 0.100 inch (2.54 mm) be-
tween centerlines.
6.
Applies to all four corners.
7.
This is measured to outside of lead, not center.
22
1
11
12
See
Note 1
E
c
E
1
L
Q
Seating
Plane
Base
Plane
L
1
A
S
1
b
1