Excelics
EFA025A
DATA SHEET
Low Distortion GaAs Power FET
+21.0dBm TYPICAL OUTPUT POWER
11.0dB TYPICAL POWER GAIN AT 12GHz
TYPICAL 1.5 dB NOISE FIGURE AND 10 dB ASSOCIATED
GAIN AT 12GHz
0.3 X 250 MICRON RECESSED "MUSHROOM" GATE
Si
3
N
4
PASSIVATION
ADVANCED EPITAXIAL DOPING PROFILE
PROVIDES HIGH POWER EFFICIENCY,
LINEARITY AND RELIABILITY
Idss SORTED IN 5mA PER BIN RANGE
ELECTRICAL CHARACTERISTICS (T
a
= 25
O
C)
SYMBOLS PARAMETERS/TEST
CONDITIONS MIN
TYP
MAX
UNIT
Output Power at 1dB Compression f=12GHz
21
P
1dB
Vds=8V, Ids=50% Idss f=18GHz
19
21
dBm
Gain at 1dB Compression f=12GHz
11
G
1dB
Vds=8V, Ids=50% Idss f=18GHz
9
9
dB
Power Added efficiency at 1dB Compression
PAE
Vds=8V, Ids=50% Idss f=12GHz
38
%
NF
Noise Figure Vds=3V,Ids=15mA f=12GHz
1.5
dB
G
A
Associated Gain Vds=3V,Ids=15mA f=12GHz
10
dB
Idss
Saturated Drain Current Vds=3V, Vgs=0V
35
65
105
mA
Gm
Transconductance Vds=3V, Vgs=0V
30
40
mS
Vp
Pinch-off Voltage Vds=3V, Ids=1.0mA
-2
-3.5
V
BVgd
Drain Breakdown Voltage Igd=1.0mA
-12
-15
V
BVgs
Source Breakdown Voltage Igs=1.0mA
-7
-14
V
Rth
Thermal Resistance (Au-Sn Eutectic Attach)
155
o
C/W
MAXIMUM RATINGS AT 25
O
C
SYMBOLS PARAMETERS ABSOLUTE
1
CONTINUOUS
2
Vds
Drain-Source Voltage
12V
8V
Vgs
Gate-Source Voltage
-8V
-4V
Ids
Drain Current
Idss
90mA
Igsf
Forward Gate Current
6mA
1mA
Pin
Input Power
19dBm
@ 3dB Compression
Tch
Channel Temperature
175
o
C
150
o
C
Tstg
Storage Temperature
-65/175
o
C
-65/150
o
C
Pt
Total Power Dissipation
880mW
730mW
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site:
www.excelics.com
Chip Thickness: 75
13 microns
All Dimensions In Microns
'
'
*
*
6
6
EFA025A
DATA SHEET
Low Distortion GaAs Power FET
S-PARAMETERS
S-PARAMETERS
3V, 15mA 8V,Idss
FREQ --- S11 --- --- S21 --- --- S12 --- --- S22 --- FREQ --- S11 --- --- S21 --- --- S12 --- --- S22 ---
(GHz) MAG ANG MAG ANG MAG ANG MAG ANG (GHz) MAG ANG MAG ANG MAG ANG MAG ANG
1.0 0.995 -13.5 3.600 168.7 0.023 81.5 0.606 -8.1 1.0 0.96 -14.6 4.413 167.5 0.017 52.8 0.699 -5.5
2.0 0.976 -26.7 3.527 158.2 0.044 72.7 0.595 -15.9 2.0 0.954 -29.2 4.255 156.5 0.031 58.8 0.698 -12.1
3.0 0.957 -39.7 3.434 148.1 0.064 64.8 0.569 -24.3 3.0 0.923 -42.9 4.083 145.2 0.044 56.1 0.684 -18.9
4.0 0.931 -53.0 3.313 137.7 0.081 57.1 0.544 -33.3 4.0 0.898 -55.1 3.865 135.2 0.054 51.5 0.665 -25.3
5.0 0.906 -63.9 3.119 128.8 0.094 50.5 0.536 -41.2 5.0 0.871 -66.3 3.651 125.5 0.063 46.3 0.644 -31.6
6.0 0.875 -74.0 2.938 120.2 0.106 44.0 0.512 -48.3 6.0 0.848 -76.4 3.422 116.7 0.069 42.2 0.625 -37.4
7.0 0.846 -84.0 2.796 111.9 0.116 38.1 0.496 -57.0 7.0 0.824 -85.7 3.203 108.7 0.074 37.8 0.608 -43.0
8.0 0.818 -93.6 2.625 103.9 0.124 32.4 0.484 -64.2 8.0 0.811 -94.4 3.021 100.7 0.078 32.7 0.595 -48.7
9.0 0.797 -102.4 2.468 96.8 0.129 27.4 0.475 -69.6 9.0 0.785 -102.5 2.81 93.5 0.08 27.9 0.577 -54.0
10.0 0.781 -110.6 2.330 90.0 0.133 22.2 0.456 -75.0 10.0 0.77 -109.7 2.639 87.0 0.079 23.8 0.564 -58.7
11.0 0.762 -119.0 2.206 83.1 0.137 17.6 0.448 -81.0 11.0 0.762 -116.6 2.49 80.6 0.08 20.3 0.553 -63.4
12.0 0.752 -127.5 2.075 76.5 0.139 13.3 0.429 -86.0 12.0 0.756 -123.4 2.358 74.1 0.079 17.6 0.541 -67.9
13.0 0.749 -134.0 1.940 70.6 0.138 9.3 0.432 -92.2 13.0 0.757 -129.6 2.239 68.2 0.081 13.9 0.531 -72.3
14.0 0.747 -138.4 1.825 65.8 0.137 6.7 0.444 -93.6 14.0 0.756 -135.5 2.136 62.2 0.08 11.7 0.517 -76.9
15.0 0.745 -142.8 1.763 61.5 0.140 4.3 0.432 -93.1 15.0 0.761 -140.7 2.051 56.3 0.079 8.7 0.506 -82.2
16.0 0.738 -150.1 1.728 55.4 0.145 0.7 0.399 -99.1 16.0 0.762 -146.0 1.965 50.0 0.082 7.9 0.496 -88.9
17.0 0.729 -157.5 1.648 49.0 0.147 -3.4 0.400 -107.7 17.0 0.763 -150.2 1.891 44.2 0.084 5.2 0.477 -96.8
18.0 0.727 -163.1 1.574 43.9 0.147 -6.1 0.397 -110.9 18.0 0.766 -154.6 1.837 38.0 0.087 3.9 0.465 -106.0
19.0 0.729 -167.9 1.532 38.6 0.150 -8.7 0.376 -117.7 19.0 0.762 -158.5 1.775 31.4 0.089 1.7 0.462 -115.8
20.0 0.718 -173.0 1.482 32.5 0.152 -12.3 0.386 -129.5 20.0 0.751 -162.4 1.7 24.6 0.092 -0.7 0.465 -127.1
21.0 0.709 -175.0 1.429 28.1 0.153 -14.5 0.393 -134.4 21.0 0.73 -165.4 1.594 18.2 0.093 -3.3 0.473 -138.2
22.0 0.709 178.6 1.365 22.5 0.153 -17.5 0.386 -142.4 22.0 0.71 -167.8 1.52 12.8 0.093 -3.1 0.489 -148.5
23.0 0.706 173.1 1.295 16.6 0.150 -20.2 0.403 -150.8 23.0 0.707 -169.4 1.457 7.9 0.093 -0.8 0.519 -156.4
24.0 0.714 166.8 1.211 11.0 0.145 -23.3 0.434 -158.6 24.0 0.71 -171.7 1.41 2.5 0.097 -0.2 0.555 -163.8
25.0 0.735 162.8 1.147 6.6 0.141 -24.7 0.455 -160.4 25.0 0.72 -175.6 1.351 -3.6 0.101 2.4 0.578 -170.1
26.0 0.738 161.3 1.056 2.9 0.132 -26.2 0.490 -165.6 26.0 0.712 -178.1 1.29 -7.2 0.103 3.8 0.603 -173.3
Note: The data included 0.7 mils diameter Au bonding wires:
2 gate wires, 15 mils each; 2 drain wires, 20 mils each; 4 source wires, 7 mils each.
P-1dB & PAE vs. Vds
0
5
10
15
20
25
4
5
6
7
8
9
10
Drain-Source Voltage (V)
P
-
1d
B (d
Bm
)
20
25
30
35
40
45
50
55
60
PA
E (
%
)
f = 12 GHz
Ids =50% Idss
Pout & PAE vs. Pin
0
5
10
15
20
25
30
35
40
45
-15 -10 -5 0 5 10 15 20
Pin (dBm)
P
o
u
t
(d
Bm
) o
r
P
A
E
(%
)
f = 12 GHz
Vds = 8 V, Ids = 50% Idss
PAE
Pout
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