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6
6
Excelics
EFA040A
DATA SHEET
Low Distortion GaAs Power FET
+23.0dBm TYPICAL OUTPUT POWER
10.5 dB TYPICAL POWER GAIN AT 12GHz
0.3 X 400 MICRON RECESSED "MUSHROOM" GATE
Si
3
N
4
PASSIVATION
ADVANCED EPITAXIAL DOPING PROFILE
PROVIDES HIGH POWER EFFICIENCY,
LINEARITY AND RELIABILITY
Idss SORTED IN 10mA PER BIN RANGE
ELECTRICAL CHARACTERISTICS (T
a
= 25
O
C)
SYMBOLS PARAMETERS/TEST
CONDITIONS MIN
TYP
MAX
UNIT
P
1dB
Output Power at 1dB Compression f=12GHz
Vds=8V, Ids=50% Idss f=18GHz
21.0 23.0
23.0
dBm
G
1dB
Gain at 1dB Compression f=12GHz
Vds=8V, Ids=50% Idss f=18GHz
9.0 10.5
8.0
dB
PAE
Gain at 1dB Compression
Vds=8V, Ids=50% Idss f=12GHz
35
%
Idss
Saturated Drain Current Vds=3V, Vgs=0V
60
105
160
mA
Gm
Transconductance Vds=3V, Vgs=0V
45
60
mS
Vp
Pinch-off Voltage Vds=3V, Ids=1.0 mA
-2.0
-3.5
V
BVgd
Drain Breakdown Voltage Igd=1.0mA
-12
-15
V
BVgs
Source Breakdown Voltage Igs=1.0mA
-7
-14
V
Rth
Thermal Resistance (Au-Sn Eutectic Attach)
105
o
C/W
MAXIMUM RATINGS AT 25
O
C
SYMBOLS PARAMETERS ABSOLUTE
1
CONTINUOUS
2
Vds
Drain-Source Voltage
12V
8V
Vgs
Gate-Source Voltage
-8V
-4V
Ids
Drain Current
Idss
135mA
Igsf
Forward Gate Current
10mA
2mA
Pin
Input Power
22dBm
@ 3dB Compression
Tch
Channel Temperature
175
o
C
150
o
C
Tstg
Storage Temperature
-65/175
o
C
-65/150
o
C
Pt
Total Power Dissipation
1.3W
1.1W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
Chip Thickness: 75
13 microns
All Dimensions In Microns
EFA040A
DATA SHEET
Low Distortion GaAs Power FET
S-PARAMETERS
8V, 1/2 Idss
FREQ --- S11 --- --- S21 --- --- S12 --- --- S22 ---
(GHz) MAG ANG MAG ANG MAG ANG MAG ANG
1.0 0.989 -21.4 4.677 163.5 0.019 78.1 0.665 -7.4
2.0 0.970 -41.5 4.457 149.3 0.036 67.0 0.646 -15.3
3.0 0.942 -60.3 4.164 135.7 0.049 56.3 0.615 -22.4
4.0 0.915 -77.6 3.845 123.2 0.060 47.3 0.584 -29.1
5.0 0.888 -94.0 3.529 111.1 0.068 38.6 0.550 -36.2
6.0 0.870 -107.0 3.204 100.9 0.072 32.1 0.526 -42.3
7.0 0.856 -118.1 2.914 91.6 0.075 27.0 0.508 -48.4
8.0 0.846 -127.2 2.663 83.2 0.077 21.2 0.496 -54.3
9.0 0.840 -135.1 2.442 75.5 0.078 16.6 0.487 -60.1
10.0 0.834 -142.0 2.258 68.4 0.077 13.1 0.482 -65.4
11.0 0.833 -148.6 2.115 61.5 0.078 10.0 0.478 -70.9
12.0 0.829 -154.2 1.985 54.8 0.078 6.9 0.476 -76.3
13.0 0.828 -160.2 1.880 48.1 0.078 3.7 0.471 -81.7
14.0 0.826 -166.5 1.799 41.4 0.079 1.1 0.465 -86.7
15.0 0.823 -173.0 1.721 34.6 0.079 -1.5 0.457 -92.5
16.0 0.824 180.0 1.652 27.4 0.080 -4.8 0.446 -98.7
17.0 0.823 172.7 1.583 19.9 0.082 -7.8 0.434 -106.0
18.0 0.822 165.6 1.510 12.5 0.082 -10.9 0.422 -114.2
19.0 0.824 159.0 1.436 5.0 0.082 -13.6 0.412 -123.8
20.0 0.827 153.0 1.358 -2.3 0.083 -16.4 0.409 -134.1
21.0 0.845 151.3 1.218 -8.6 0.078 -18.8 0.445 -148.8
22.0 0.853 148.1 1.144 -14.9 0.076 -20.1 0.467 -158.9
23.0 0.859 145.0 1.073 -20.7 0.076 -19.7 0.496 -166.3
24.0 0.862 143.0 1.012 -26.4 0.073 -20.1 0.533 -173.2
25.0 0.870 141.1 0.965 -31.9 0.074 -18.3 0.565 -179.5
26.0 0.866 139.5 0.915 -36.9 0.074 -17.5 0.595 176.0
Note: The data included 0.7 mils diameter Au bonding wires:
1 gate wires, 15 mils each; 1 drain wires, 20 mils each; 4 source wires, 7 mils each.
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