Excelics
EFA1200A
PRELIMINARY DATA SHEET
Low Distortion GaAs Power FET
+37.0dBm TYPICAL OUTPUT POWER
16.0dB TYPICAL POWER GAIN AT 2GHz
0.5 X 12,000 MICRON RECESSED
"MUSHROOM" GATE
Si
3
N
4
PASSIVATION AND PLATED HEAT SINK
ADVANCED EPITAXIAL DOPING PROFILE
PROVIDES HIGH POWER EFFICIENCY,
LINEARITY AND RELIABILITY
Idss SORTED IN 200mA PER BIN RANGE
ELECTRICAL CHARACTERISTICS (T
a
= 25
O
C)
SYMBOLS PARAMETERS/TEST
CONDITIONS MIN
TYP
MAX
UNIT
P
1dB
Output Power at 1dB Compression f= 2GHz
Vds=8V, Ids=50% Idss f= 4GHz
35.5 37.0
37.0
dBm
G
1dB
Gain at 1dB Compression f= 2GHz
Vds=8V, Ids=50% Idss f= 4GHz
14.5 16.0
11.0
dB
Idss
Saturated Drain Current Vds=3V, Vgs=0V
2000
3400
4400
mA
Gm
Transconductance Vds=3V, Vgs=0V
1400
1800
mS
Vp
Pinch-off Voltage Vds=3V, Ids=30mA
-2.0
-3.5
V
BVgd
Drain Breakdown Voltage Igd=12mA
-12
-15
V
BVgs
Source Breakdown Voltage Igs=12mA
-7
-14
V
Rth
Thermal Resistance (Au-Sn Eutectic Attach)
4
o
C/W
MAXIMUM RATINGS AT 25
O
C
SYMBOLS PARAMETERS ABSOLUTE
1
CONTINUOUS
2
Vds
Drain-Source Voltage
12V
8V
Vgs
Gate-Source Voltage
-8V
-4V
Ids
Drain Current
Idss
2.0A
Igsf
Forward Gate Current
300mA
50mA
Pin
Input Power
36dBm
@3dB Compression
Tch
Channel Temperature
175
o
C
150
o
C
Tstg
Storage Temperature
-65/175
o
C
-65/150
o
C
Pt
Total Power Dissipation
34 W
28 W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
Chip Thickness: 50
10 microns
(with > 20 microns Gold Plated Heat Sink (PHS) )
All Dimensions In Microns
'
'
'
'
'
*
*
*
*
*
6
6
6
6
6
6
EFA1200A
PRELIMINARY DATA SHEET
Low Distortion GaAs Power FET
S-PARAMETERS
8V, 1/2 Idss
FREQ --- S11 --- --- S21 --- --- S12 --- --- S22 ---
(GHz) MAG ANG MAG ANG MAG ANG MAG ANG
0.500 0.971 -156.3 5.096 98.0 0.012 17.9 0.794 -177.7
1.000 0.970 -168.7 2.590 88.2 0.013 17.8 0.799 -178.7
1.500 0.970 -173.2 1.732 82.3 0.013 21.4 0.801 -178.9
2.000 0.970 -175.7 1.300 77.4 0.013 25.7 0.803 -179.0
2.500 0.970 -177.4 1.040 73.0 0.014 30.1 0.805 -179.1
3.000 0.970 -178.7 0.867 68.8 0.015 34.3 0.807 -179.1
3.500 0.970 -179.8 0.743 64.8 0.015 38.2 0.810 -179.1
4.000 0.970 179.3 0.650 60.9 0.016 41.8 0.813 -179.1
4.500 0.971 178.5 0.577 57.2 0.017 45.1 0.816 -179.1
5.000 0.971 177.8 0.519 53.5 0.018 48.0 0.820 -179.2
5.500 0.971 177.1 0.471 50.0 0.019 50.7 0.823 -179.2
6.000 0.972 176.4 0.430 46.5 0.020 53.1 0.827 -179.3
6.500 0.972 175.8 0.396 43.2 0.021 55.3 0.831 -179.4
7.000 0.972 175.1 0.367 39.9 0.023 57.2 0.835 -179.5
7.500 0.973 174.5 0.341 36.8 0.024 59.0 0.840 -179.6
8.000 0.973 174.0 0.318 33.8 0.025 60.5 0.844 -179.8
8.500 0.974 173.4 0.297 30.9 0.027 61.9 0.849 -180.0
9.000 0.974 172.8 0.279 28.1 0.028 63.1 0.853 179.8
9.500 0.975 172.2 0.262 25.4 0.029 64.2 0.858 179.6
10.000 0.975 171.7 0.247 22.8 0.031 65.1 0.863 179.4
Note: The data included 0.7 mils diameter Au bonding wires:
5 gate wires, 20 mils each; 5 drain wires, 12 mils each; 12 source wires, 7 mils each.
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