GATE
SOURCE
DRAIN
SOURCE
16-20
177-183
160-170
95-100
29-31
59
65-75
15-25
44
14-16
65-69
Excelics
EFA120D-SOT89
PRELIMINARY DATA SHEET
DC-4GHz
Low Distortion GaAs Power FET
Features
LOW COST SURFACE-MOUNT PLASTIC PACKAGE
+28.0dBm TYPICAL OUTPUT POWER
14.0dB TYPICAL POWER GAIN AT 2GHz
0.7dB TYPICAL NOISE FIGURE AT 2GHz
+42dBm TYPICAL OUTPUT 3rd ORDER INTERCEPT POINT
AT 2GHz
0.5 X 2400 MICRON RECESSED "MUSHROOM" GATE
Si
3
N
4
PASSIVATION
ADVANCED EPITAXIAL DOPING PROFILE
PROVIDES HIGH POWER EFFICIENCY,
LINEARITY AND RELIABILITY
Applications
Analog and Digital Wireless System
HPA
ELECTRICAL CHARACTERISTICS (T
a
= 25
O
C)
SYMBOLS
PARAMETERS/TEST CONDITIONS
MIN
TYP
MAX
UNIT
P
1dB
Output Power at 1dB Compression f = 2GHz
Vds=7V, Ids=180mA
26.5
28.0
dBm
G
1dB
Gain at 1dB Compression f = 2GHz
Vds=7V, Ids=180mA
12.0
14.0
dB
PAE
Power Added Efficiency at 1dB Compression
Vds=7V, Ids=180mA f = 2GHz
45
%
NF
Noise Figure f = 2GHz
Vds=5V, Ids=75mA
Vds=5-7V, Ids=180mA
0.7
1.2
dB
IP3
Output 3rd Order Intercept Point f = 2GHz
Vds=5-7V, Ids=180mA
Vds=5V, Ids=75mA
42
33
dBm
Idss
Saturated Drain Current Vds=3V, Vgs=0V
220
340
440
mA
Gm
Transconductance Vds=3V, Vgs=0V
140
180
mS
Vp
Pinch-off Voltage Vds=3V, Ids=3mA
-2.0
-3.5
V
BVgd
Drain Breakdown Voltage Igd=1.2mA
-11
-15
V
BVgs
Source Breakdown Voltage Igs=1.2mA
-7
-14
V
Rth
Thermal Resistance
43*
o
C/W
*Overall Rth depends on case mounting.
MAXIMUM RATINGS AT 25
O
C
SYMBOLS
PARAMETERS
ABSOLUTE
1
CONTINUOUS
2
Vds
Drain-Source Voltage
12V
7V
Vgs
Gate-Source Voltage
-8V
-4V
Ids
Drain Current
Idss
390mA
Igsf
Forward Gate Current
30mA
5mA
Pin
Input Power
26dBm
@ 3dB Compression
Tch
Channel Temperature
175
o
C
150
o
C
Tstg
Storage Temperature
-65/175
o
C
-65/150
o
C
Pt
Total Power Dissipation
3.2 W
2.7 W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
(Top View)
All Dimensions In Mils
EFA120D-SOT89
PRELIMINARY DATA SHEET
DC-4GHz
Low Distortion GaAs Power FET
S-PARAMETERS
5V, 75mA
FREQ
--- S11 ---
--- S21 ---
--- S12 ---
--- S22 ---
GHz
Mag
Ang
Mag
Ang
Mag
Ang
Mag
Ang
0.1
0.974 -17.9 13.178 168.4 0.010 60.8 0.101 -48.3
0.2
0.983 -35.1 12.865 157.8 0.022 69.6 0.155 -78.1
0.3
0.969 -51.2 12.209 147.6 0.030 63.9 0.199 -94.1
0.4
0.955 -65.9 11.496 138.5 0.039 54.6 0.240 -108.2
0.5
0.942 -79.0 10.720 129.8 0.045 49.7 0.272 -118.3
1.0
0.865 -126.8 7.356 97.3 0.063 26.6 0.361 -151.1
1.5
0.742 -142.0 5.973 82.1 0.080 20.0 0.220 -155.8
2.0
0.706 -167.6 4.781 62.6 0.087
8.9 0.225 -179.9
2.5
0.681 171.4 4.029 45.6 0.095 -0.7 0.222 163.7
3.0
0.657 151.4 3.532 29.1 0.104 -10.4 0.210 148.2
3.5
0.648 129.1 3.169 11.6 0.112 -21.5 0.202 127.5
4.0
0.665 104.9 2.812 -6.5 0.118 -33.4 0.218 100.6
4.5
0.704 81.9
2.443 -24.7 0.119 -45.7 0.276 73.7
5.0
0.755 63.3
2.080 -41.3 0.116 -57.4 0.356 54.0
5.5
0.796 49.1
1.769 -56.1 0.110 -67.6 0.437 39.0
6.0
0.826 36.7
1.520 -70.2 0.105 -76.9 0.496 26.8
7V, 180mA
FREQ
--- S11 ---
--- S21 ---
--- S12 ---
--- S22 ---
GHz
Mag
Ang
Mag
Ang
Mag
Ang
Mag
Ang
0.1
0.988 -18.5 13.317 168.2 0.017 83.2 0.191 -33.8
0.2
0.990 -34.6 12.905 158.0 0.020 71.4 0.203 -52.2
0.3
0.981 -50.5 12.292 147.9 0.030 64.1 0.225 -71.4
0.4
0.974 -65.4 11.665 138.3 0.037 56.5 0.251 -86.8
0.5
0.958 -78.3 10.901 129.7 0.043 49.6 0.270 -98.8
1.0
0.867 -127.0 7.393 96.7 0.060 25.1 0.311 -137.9
1.5
0.772 -142.2 5.984 81.2 0.075 18.8 0.192 -131.4
2.0
0.712 -167.8 4.755 61.3 0.081
7.5 0.174 -157.6
2.5
0.688 169.6 4.027 43.8 0.089 -2.0 0.174 -171.2
3.0
0.667 149.4 3.515 26.8 0.095 -11.7 0.157 172.8
3.5
0.653 127.5 3.159
9.3
0.103 -21.9 0.135 152.4
4.0
0.673 102.8 2.804 -9.2 0.107 -33.5 0.135 115.7
4.5
0.712 81.5
2.430 -27.0 0.109 -44.7 0.180 75.4
5.0
0.762 63.3
2.093 -43.6 0.107 -55.7 0.258 52.4
5.5
0.802 48.8
1.789 -59.0 0.102 -65.1 0.347 37.1
6.0
0.827 35.5
1.556 -73.1 0.099 -73.7 0.413 27.0
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