960
50
350
50
120
48
100
95
40
156
D
D
D
D
G
G
G
G
Excelics
EFA240B/EFA240BV
DATA SHEET
Low Distortion GaAs Power FET
+31.0dBm TYPICAL OUTPUT POWER
8.5dB TYPICAL POWER GAIN FOR EFA240B AND
10.5dB FOR EFA240BV AT 12GHz
0.3 X 2400 MICRON RECESSED "MUSHROOM" GATE
Si
3
N
4
PASSIVATION
ADVANCED EPITAXIAL DOPING PROFILE
PROVIDES HIGH POWER EFFICIENCY,
LINEARITY AND RELIABILITY
EFA240BV WITH VIA HOLE SOURCE GROUNDING
Idss SORTED IN 40mA PER BIN RANGE
ELECTRICAL CHARACTERISTICS (T
a
= 25
O
C)
SYMBOLS PARAMETERS/TEST CONDITIONS
EFA240B
EFA240BV
UNIT
MIN TYP MAX
MIN
TYP
MAX
P
1dB
Output Power at 1dB Compression f=12GHz
Vds=8V, Ids=50% Idss f=18GHz
29.0 31.0
31.0
29.0
31.0
31.0
dBm
G
1dB
Gain at 1dB Compression f=12GHz
Vds=8V, Ids=50% Idss f=18GHz
7.0
8.5
6.0
9.0
10.5
8.0
dB
PAE
Gain at 1dB Compression
Vds=8V, Ids=50% Idss f=12GHz
33
35
%
Idss
Saturated Drain Current Vds=3V, Vgs=0V
400
680
880
400
680
880
mA
Gm
Transconductance Vds=3V, Vgs=0V
280
360
280
360
mS
Vp
Pinch-off Voltage Vds=3V, Ids=6 mA
-2.0
-3.5
-2.0
-3.5
V
BVgd
Drain Breakdown Voltage Igd=2.4mA
-12
-15
-12
-15
V
BVgs
Source Breakdown Voltage Igs=2.4mA
-7
-14
-7
-14
V
Rth
Thermal Resistance (Au-Sn Eutectic Attach)
20
15
o
C/W
MAXIMUM RATINGS AT 25
O
C
SYMBOLS
PARAMETERS
EFA240B
EFA240BV
ABSOLUTE
1
CONTINUOUS
2
ABSOLUTE
1
CONTINUOUS
2
Vds
Drain-Source Voltage
12V
8V
12V
8V
Vgs
Gate-Source Voltage
-8V
-4V
-8V
-4V
Ids
Drain
Current
Idss 710mA
Idss Idss
Igsf
Forward Gate Current
60mA
10mA
60mA
10mA
Pin
Input Power
29dBm
@ 3dB
Compression
29dBm @
3dB
Compression
Tch
Channel Temperature
175
o
C 150
o
C 175
o
C 150
o
C
Tstg
Storage Temperature
-65/175
o
C -65/150
o
C -65/175
o
C -65/150
o
C
Pt
Total
Power
Dissipation
6.8W 5.7W 9.1W 7.6W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
Chip Thickness: 75
20 microns
All Dimensions In Microns
: Via Hole
No Via Hole For EFA240B
EFA240B/EFA240BV
DATA SHEET
Low Distortion GaAs Power FET
EFA240B
S-PARAMETERS
EFA240B 8V, 1/2 Idss
FREQ --- S11 ---
--- S21 ---
--- S12 ---
--- S22 ---
(GHz) MAG ANG MAG ANG MAG ANG MAG ANG
1.0 0.924 -109.6 8.554 117.9 0.035 34.7 0.345 -151.2
2.0 0.910 -140.4 4.879 97.0 0.039 20.8 0.407 -161.6
4.0 0.905 -157.4 2.561 77.8 0.039 14.8 0.447 -166.5
6.0 0.904 -163.9 1.717 64.0 0.037 16.1 0.492 -165.7
8.0 0.907 -168.2 1.295 52.5 0.036 17.7 0.541 -163.7
10.0 0.909 -171.9 1.020 42.7 0.032 22.5 0.594 -162.2
12.0 0.917 -177.5 0.835 32.1 0.031 24.8 0.653 -162.4
14.0 0.924 179.1 0.688 22.4 0.030 25.9 0.706 -165.7
16.0 0.927 174.9 0.569 11.6 0.032 23.2 0.741 -171.9
18.0 0.944 174.3 0.474 2.4 0.033 22.4 0.778 -179.5
20.0 0.953 173.2 0.395 -7.7 0.035 24.0 0.813 171.7
22.0 0.942 175.2 0.326 -13.6 0.040 24.7 0.830 164.7
24.0 0.960 177.3 0.290 -17.6 0.044 30.3 0.848 160.2
26.0 0.951 177.1 0.257 -19.2 0.053 39.2 0.846 160.0
S-PARAMETERS
EFA240BV 8V, 1/2 Idss
FREQ --- S11 ---
--- S21 ---
--- S12 ---
--- S22 ---
(GHz) MAG ANG MAG ANG MAG ANG MAG ANG
1.0 0.907 -109.0 9.976 119.2 0.033 33.9 0.356 -145.6
2.0 0.905 -142.3 5.784 97.9 0.038 17.7 0.425 -157.1
4.0 0.907 -163.3 2.990 77.1 0.038 5.5 0.471 -161.2
6.0 0.915 -171.5 1.961 63.2 0.035 1.4 0.520 -161.0
8.0 0.923 -175.8 1.431 51.7 0.032 -1.2 0.574 -161.2
10.0 0.933 -178.0 1.106 41.8 0.029 -2.4 0.627 -162.0
12.0 0.940 180.0 0.887 32.4 0.027 -3.0 0.677 -163.9
14.0 0.941 177.8 0.731 23.3 0.025 -5.5 0.721 -166.5
16.0 0.947 175.1 0.616 14.1 0.024 -8.8 0.756 -169.8
18.0 0.949 171.5 0.531 4.7 0.025 -11.9 0.791 -173.7
20.0 0.954 167.9 0.459 -4.5 0.024 -13.0 0.818 -177.9
22.0 0.967 167.2 0.389 -12.4 0.023 -12.5 0.848 175.9
24.0 0.970 165.3 0.335 -19.6 0.024 -11.2 0.873 172.2
26.0 0.971 163.3 0.292 -25.8 0.024 -0.7 0.900 170.7
Note: The data included 0.7 mils diameter Au bonding wires; 4 gate wires, 15 mils each; 4 drain wires, 20 mils each;
10 source wires, 7 mils each; no source wires for EFA240BV.
P-1dB & PAE vs Vds
0
5
10
15
20
25
30
35
4
5
6
7
8
9
10
Drain-Source Voltage (V)
P-
1
d
B (
d
B
m
)
20
25
30
35
40
45
50
55
60
PA
E (
%
)
f = 12 GHz
Ids = 50% Idss
Pout & PAE vs. Pin
0
5
10
15
20
25
30
35
40
45
5
10
15
20
25
30
Pin (dBm)
P
o
u
t
(d
B
m
) o
r
P
A
E
(
%
)
Vds = 8 V, Ids = 50% Idss
f = 12 GHz
PAE
Pout
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