Excelics
EFA240D
DATA SHEET
Rev.1
Low Distortion GaAs Power FET
+31.0dBm TYPICAL OUTPUT POWER
18.5dB TYPICAL POWER GAIN AT 2GHz
0.5 X 2400 MICRON RECESSED "MUSHROOM" GATE
Si
3
N
4
PASSIVATION AND PLATED HEAT SINK
ADVANCED EPITAXIAL DOPING PROFILE
PROVIDES HIGH POWER EFFICIENCY,
LINEARITY AND RELIABILITY
Idss SORTED IN 40mA PER BIN RANGE
ELECTRICAL CHARACTERISTICS (T
a
= 25
O
C)
SYMBOLS PARAMETERS/TEST
CONDITIONS MIN
TYP
MAX
UNIT
P
1dB
Output Power at 1dB Compression f= 2GHz
Vds=8V, Ids=50% Idss f= 4GHz
29.0 31.0
31.0
dBm
G
1dB
Gain at 1dB Compression f= 2GHz
Vds=8V, Ids=50% Idss f= 4GHz
16.0 18.5
13.5
dB
PAE
Power Added Efficiency at 1dB Compression
Vds=8V, Ids=50% Idss f=2GHz
45
%
Idss
Saturated Drain Current Vds=3V, Vgs=0V
400
680
880
mA
Gm
Transconductance Vds=3V, Vgs=0V
280
360
mS
Vp
Pinch-off Voltage Vds=3V, Ids=6mA
-2.0
-3.5
V
BVgd
Drain Breakdown Voltage Igd=2.4mA
-12
-15
V
BVgs
Source Breakdown Voltage Igs=2.4mA
-7
-14
V
Rth
Thermal Resistance (Au-Sn Eutectic Attach)
23
o
C/W
MAXIMUM RATINGS AT 25
O
C
SYMBOLS PARAMETERS ABSOLUTE
1
CONTINUOUS
2
Vds
Drain-Source Voltage
12V
8V
Vgs
Gate-Source Voltage
-8V
-4V
Ids
Drain Current
Idss
620mA
Igsf
Forward Gate Current
60mA
10mA
Pin
Input Power
29dBm
@ 3dB Compression
Tch
Channel Temperature
175
o
C
150
o
C
Tstg
Storage Temperature
-65/175
o
C
-65/150
o
C
Pt
Total Power Dissipation
6.0 W
5.0 W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
Chip Thickness: 75
13 microns
All Dimensions In Microns
104
620
72
155
75
100
94
410
D
G
S
S
EFA240D
DATA SHEET
Rev.1
Low Distortion GaAs Power FET
S-PARAMETERS
8V, 1/2 Idss
FREQ --- S11 --- --- S21 --- --- S12 --- --- S22 ---
(GHz) MAG ANG MAG ANG MAG ANG MAG ANG
0.500 0.950 -75.6 11.303 136.8 0.027 53.1 0.195 -119.8
1.000 0.906 -116.5 7.670 113.0 0.036 35.5 0.264 -142.3
1.500 0.888 -138.2 5.566 99.1 0.040 27.9 0.290 -152.3
2.000 0.880 -151.5 4.317 89.4 0.041 24.4 0.303 -157.5
2.500 0.877 -160.7 3.510 81.6 0.042 22.9 0.312 -160.6
3.000 0.875 -167.7 2.952 74.9 0.043 22.5 0.321 -162.6
3.500 0.875 -173.3 2.544 68.8 0.043 22.6 0.329 -164.0
4.000 0.876 -178.1 2.233 63.2 0.044 23.2 0.338 -165.0
4.500 0.877 177.7 1.989 57.8 0.045 24.1 0.347 -165.9
5.000 0.879 173.9 1.792 52.7 0.046 25.1 0.356 -166.7
5.500 0.881 170.4 1.630 47.8 0.046 26.3 0.366 -167.5
6.000 0.883 167.1 1.493 43.0 0.047 27.5 0.377 -168.3
6.500 0.885 164.1 1.377 38.3 0.048 28.7 0.389 -169.1
7.000 0.887 161.1 1.276 33.7 0.050 30.0 0.400 -169.9
7.500 0.890 158.4 1.188 29.2 0.051 31.2 0.413 -170.8
8.000 0.893 155.7 1.109 24.8 0.052 32.3 0.426 -171.8
8.500 0.896 153.1 1.040 20.5 0.054 33.4 0.439 -172.9
9.000 0.899 150.6 0.977 16.2 0.056 34.4 0.453 -174.0
9.500 0.902 148.1 0.920 12.1 0.058 35.3 0.467 -175.2
10.000 0.905 145.7 0.867 8.0 0.060 36.0 0.481 -176.5
Note: The data included 0.7 mils diameter Au bonding wires:
1 gate wires, 20 mils each; 1 drain wires, 12 mils each; 4 source wires, 7 mils each.
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