EFA720AV-CP083
UPDATED
01/30/2006
Low Distortion GaAs Power FET
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 1 of 1
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
Revised January 2006
All Dimensions in mil
Tolerance: 3 mil
FEATURES
NON-HERMETIC SURFACE MOUNT
160MIL METAL CERAMIC PACKAGE
+33.5dBm OUTPUT POWER
17.0 dB TYPICAL POWER GAIN AT 2 GHz
0.5x4800
MICRON
RECESSED "MUSHROOM" GATE
Si
3
N
4
PASSIVATION
ADVANCED EPITAXIAL HETEROJUNCTION PROFLIE
PROVIDES EXTRA HIGH POWER EFFICIENCY, AND HIGH
RELIABILITY
ELECTRICAL CHARACTERISTICS (T
a
= 25
C)
Caution! ESD sensitive device.
SYMBOL PARAMETER/TEST
CONDITIONS MIN
TYP
MAX
UNITS
P
1dB
Output Power at 1dB Compression
f = 2.0 GHz
Vds = 8 V, Ids=50% Idss
f = 4.0 GHz
33.5
35.5
35.5
dBm
G
1dB
Gain at 1dB Compression
f = 2.0 GHz
Vds = 8 V, Ids=50% Idss f = 4.0 GHz
15.5
17.0
12.0
dB
PAE
Power Added Efficiency at 1dB Compression
Vds = 8 V, Ids=50% Idss
f = 2.0 GHz
36 %
I
DSS
Saturated Drain Current
V
DS
= 3 V, V
GS
= 0 V
1200
2040
2640
mA
G
M
Transconductance
V
DS
= 3 V, V
GS
= 0 V
840
1100
mS
V
P
Pinch-off Voltage
V
DS
= 3 V, I
DS
= 10 mA
-2.0
-3.5
V
BV
GD
Drain Breakdown Voltage I
GD
= 7.2 mA
-13
-15
V
BV
GS
Source Breakdown Voltage
I
GS
= 7.2 mA
-7
-14
V
R
TH
*
Thermal Resistance
6*
o
C/W
Notes:
*
Overall Rth depends on case mounting.
MAXIMUM RATINGS AT 25
O
C
SYMBOLS PARAMETERS
ABSOLUTE
1
CONTINUOUS
2
Vds
Drain-Source Voltage
12V 8V
Vgs
Gate-Source Voltage
-5V -3V
Igsf
Forward Gate Current
32.4 mA
10.8 mA
Igsr
Reserve Gate Current
5.4 mA
1.8 mA
Pin
Input Power
32.5 dBm
@ 3dB Compression
Tch
Channel Temperature
175
o
C 175
o
C
Tstg
Storage Temperature
-65/175
o
C -65/175
o
C
Pt
Total Power Dissipation
20 W
20 W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
EFA
720AV
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