GATE
SOURCE
DRAIN
SOURCE
16-20
177-183
160-170
95-100
29-31
59
65-75
15-25
44
14-16
65-69
Excelics
EFC240D-SOT89
PRELIMINARY DATA SHEET
DC-4GHz
Low Distortion GaAs Power FET
Features
LOW COST SURFACE-MOUNT PLASTIC PACKAGE
+30.5dBm TYPICAL OUTPUT POWER
13.0dB TYPICAL POWER GAIN AT 2GHz
+47dBm TYPICAL OUTPUT 3rd ORDER INTERCEPT POINT
AT 2GHz
0.5 X 2400 MICRON RECESSED "MUSHROOM" GATE
Si
3
N
4
PASSIVATION
ADVANCED EPITAXIAL DOPING PROFILE
PROVIDES HIGH POWER EFFICIENCY,
LINEARITY AND RELIABILITY
Applications
Analog and Digital Wireless System
HPA
ELECTRICAL CHARACTERISTICS (T
a
= 25
O
C)
SYMBOLS
PARAMETERS/TEST CONDITIONS
MIN
TYP
MAX
UNIT
P
1dB
Output Power at 1dB Compression f = 2GHz
Vds=9V, Ids=270mA
29.0
30.5
dBm
G
1dB
Gain at 1dB Compression f = 2GHz
Vds=9V, Ids=270mA
11.0
13.0
dB
PAE
Power Added Efficiency at 1dB Compression
Vds=9V, Ids=270mA f = 2GHz
42
%
IP3
Output 3rd Order Intercept Point
Vds=7-9V, Ids=340mA f = 2GHz
47
dBm
Idss
Saturated Drain Current Vds=3V, Vgs=0V
320
520
720
mA
Gm
Transconductance Vds=3V, Vgs=0V
200
280
mS
Vp
Pinch-off Voltage Vds=3V, Ids=6mA
-2.5
-4.0
V
BVgd
Drain Breakdown Voltage Igd=2.4mA
-14
-20
V
BVgs
Source Breakdown Voltage Igs=2.4mA
-10
-17
V
Rth
Thermal Resistance
25*
o
C/W
*Overall Rth depends on case mounting.
MAXIMUM RATINGS AT 25
O
C
SYMBOLS
PARAMETERS
ABSOLUTE
1
CONTINUOUS
2
Vds
Drain-Source Voltage
14V
9V
Vgs
Gate-Source Voltage
-8V
-4.5V
Ids
Drain Current
Idss
510mA
Igsf
Forward Gate Current
60mA
10mA
Pin
Input Power
29dBm
@ 3dB Compression
Tch
Channel Temperature
175
o
C
150
o
C
Tstg
Storage Temperature
-65/175
o
C
-65/150
o
C
Pt
Total Power Dissipation
5.5 W
4.6 W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
(Top View)
All Dimensions In Mils
EFC240D-SOT89
PRELIMINARY DATA SHEET DC-4GHz
Low Distortion GaAs Power FET
S-PARAMETERS
9V, 270mA
FREQ --- S11 --- --- S21 --- --- S12 --- --- S22 ---
GHz Mag Ang Mag Ang Mag Ang Mag Ang
0.1 0.969 -28.4 14.414 160.7 0.013 77.9 0.160 -122.8
0.2 0.960 -54.3 13.109 146.4 0.028 58.9 0.260 -130.8
0.3 0.938 -75.7 11.663 133.8 0.036 49.8 0.330 -139.2
0.4 0.928 -93.9 10.362 122.8 0.044 42.8 0.387 -146.7
0.5 0.908 -108.4 9.131 113.9 0.049 35.8 0.420 -153.1
1.0 0.847 -152.6 5.337 84.0 0.058 18.4 0.478 -174.7
1.5 0.775 -170.2 4.411 67.4 0.076 13.0 0.357 169.1
2.0 0.738 168.2 3.406 49.5 0.083 4.5 0.366 153.2
2.5 0.734 148.2 2.850 32.7 0.091 -3.4 0.365 143.0
3.0 0.723 130.1 2.462 16.0 0.099 -12.2 0.360 129.2
3.5 0.721 110.1 2.187 -1.7 0.107 -22.6 0.354 112.6
4.0 0.746 88.5 1.897 -20.5 0.112 -34.9 0.375 92.9
4.5 0.778 70.4 1.616 -38.0 0.112 -46.2 0.424 71.2
5.0 0.817 55.2 1.364 -54.2 0.108 -56.6 0.484 54.4
5.5 0.843 42.8 1.146 -68.6 0.103 -66.0 0.554 40.2
6.0 0.860 30.9 0.983 -82.3 0.099 -74.4 0.601 29.9
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