EFE960EV-250P
ISSUED
01/03/2006
Low Distortion GaAs Power FET
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 1of 1
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
Revised January 2006
FEATURES
Non-Hermetic 250mil Metal Flange Package
+36.5 dBm Typical Output Power
15.0 dB Typical Power Gain at 2GHz
0.6 x 9600 Micron Recessed "Mushroom"Gate
Si
3
N
4
Passivation
Advanced Epitaxial Heterojunction Profile
Provides Extra High Power Efficiency and
High Reliability
Caution! ESD sensitive device.
ELECTRICAL CHARACTERISTICS (T
a
= 25
C)
SYMBOL PARAMETERS/TEST
CONDITIONS MIN
TYP
MAX
UNITS
35.0 36.5
P
1dB
Output Power at 1dB Compression f = 2GHz
V
DS
= 10 V, I
DS
50% I
DSS
f = 4GHz
36.5
dBm
13.5 15.0
G
1dB
Gain at 1dB Compression f = 2GHz
V
DS
= 10 V, I
DS
50% I
DSS
f = 4GHz
11.0
dB
PAE
Power Added Efficiency at 1dB Compression
V
DS
= 10 V, I
DS
50% I
DSS
f = 2GHz
36 %
I
DSS
Saturated Drain Current
V
DS
= 3 V, V
GS
= 0 V
1500
2000
2500
mA
G
M
Transconductance
V
DS
= 3 V, V
GS
= 0 V
1000
mS
V
P
Pinch-off Voltage
V
DS
= 3 V, I
DS
= 20 mA
-2.5
-4.0
V
BV
GD
Drain Breakdown Voltage
I
GD
= 9.6 mA
-19
-22
V
BV
GS
Source Breakdown Voltage
I
GS
= 9.6 mA
-10
-20
V
R
TH
Thermal Resistance
5.5*
6.0*
o
C/W
* Overall Rth depends on case mounting.
MAXIMUM RATINGS
1,2
(T
a
= 25
C)
SYMBOL CHARACTERISTIC
ABSOLUTE
CONTINUOUS
V
DS
Drain to Source Voltage
15 V
10 V
V
GS
Gate to Source Voltage
-5 V
-4 V
I
DS
Drain Current
Idss
2.5 A
I
GSF
Forward Gate Current
43.2 mA
14.4 mA
I
GSR
Reverse Gate Current
-7.2 mA
-2.4 mA
P
IN
Input Power
33.5 dBm
@ 3dB compression
P
T
Total Power Dissipation
25 W
25 W
T
CH
Channel
Temperature
175C
175C
T
STG
Storage
Temperature
-65/+175C
-65/+175C
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
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