Excelics
EIA1314A-2P
PRELIMINARY DATA SHEET
13.0-14.5 GHz: 2Watt
Internally Matched Power FET
13.0-14.5GHz BANDWIDTH AND INPUT/OUTPUT
IMPEDANCE MATCHED TO 50 OHM
FEATURES HIGH PAE( 30% TYPICAL)
33.0dBm TYPICAL P
1dB
OUTPUT POWER
9dB TYPICAL G
1dB
POWER GAIN
NON-HERMETIC METAL FLANGE PACKAGE
ELECTRICAL CHARACTERISTICS (T
a
= 25
O
C)
EIA1314A-2P
SYMBOLS
PARAMETERS/TEST CONDITIONS
MIN
TYP
MAX
UNIT
P
1dB
Output Power at 1dB Compression f=13.0-14.5GHz
Vds=8V, Idsq=0.5 Idss
32.5
33.0
dBm
G
1dB
Gain at 1dB Compression f=13.0-14.5GHz
Vds=8V, Idsq=0.5 Idss
8
9
dB
PAE
Power Added Efficiency at 1dB compression
f=13.0-14.5GHz
Vds=8V, Idsq=0.5 Idss
30
%
Id
1dB
Drain Current at 1dB Compression
880
mA
IP
3
Output 3
rd
Order Intercept Point f=13.0-14.5GHz
Vds=8V, Idsq=0.5 Idss
40
dBm
I
dss
Saturated Drain Current Vds=3V, Vgs=0V
1100
1440
1700
mA
G
m
Transconductance Vds=3V, Vgs=0V
1500
mS
V
p
Pinch-off Voltage Vds=3V, Ids=12mA
-1.0
-2.5
V
BV
gd
Drain Breakdown Voltage Igd=4.8mA
-13
-15
V
R
th
Thermal Resistance (Au-Sn Eutectic Attach)
8
o
C/W
MAXIMUM RATINGS AT 25
O
C
SYMBOLS
PARAMETERS
ABSOLUTE
1
CONTINUOUS
2
Vds
Drain-Source Voltage
12V
8V
Vgs
Gate-Source Voltage
-8V
-3V
Ids
Drain Current
Idss
Idss
Igsf
Forward Gate Current
180mA
30mA
Pin
Input Power
32dBm
@ 3dB Compression
Tch
Channel Temperature
175
o
C
150
o
C
Tstg
Storage Temperature
-65/175
o
C
-65/150
o
C
Pt
Total Power Dissipation
17W
14.2W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
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