Excelics
EIA1314A-8P
Not recommended for new designs. Contact factory. Effective 03/2003
13.0-14.5GHz, 8W Internally Matched Power FET
13.0-14.5GHz BANDWIDTH AND INPUT/OUTPUT
IMPEDANCE MATCHED TO 50 OHM
HIGH PAE(25% TYPICAL)
+39dBm TYPICAL P
1dB
OUTPUT POWER
6.5dB TYPICAL G
1dB
POWER GAIN
NON-HERMETIC METAL FLANGE PACKAGE
ELECTRICAL CHARACTERISTICS (T
a
= 25
O
C)
EIA1314A-8P
SYMBOLS
PARAMETERS/TEST CONDITIONS
MIN
TYP
MAX
UNIT
P
1dB
Output Power at 1dB Compression f=13.0-14.5GHz
Vds=8V, Idsq=0.5 Idss
38
39
dBm
G
1dB
Gain at 1dB Compression f=13.0-14.5GHz
Vds=8V, Idsq=0.5 Idss
5.5
6.5
dB
PAE
Power Added Efficiency at 1dB compression
f=13.0-14.5GHz Vds=8V, Idsq=0.5 Idss
25
%
Id
1dB
Drain Current at 1dB Compression
3520
mA
IP
3
Output 3
rd
Order Intercept Point f=13.0-14.5GHz
Vds=8V, Idsq=0.5 Idss
46
dBm
I
dss
Saturated Drain Current Vds=3V, Vgs=0V
4400 5760
6800
mA
G
m
Transconductance Vds=3V, Vgs=0V
6000
mS
V
p
Pinch-off Voltage Vds=3V, Ids=48mA
-1.0
-2.5
V
BV
gd
Drain Breakdown Voltage Igd=19.2mA
-13
-15
V
R
th
Thermal Resistance (Au-Sn Eutectic Attach)
2.3
o
C/W
MAXIMUM RATINGS AT 25
O
C
SYMBOLS
PARAMETERS
ABSOLUTE
1
CONTINUOUS
2
Vds
Drain-Source Voltage
12V
8V
Vgs
Gate-Source Voltage
-8V
-3V
Ids
Drain Current
Idss
6240mA
Igsf
Forward Gate Current
720mA
120mA
Pin
Input Power
38dBm
@ 3dB Compression
Tch
Channel Temperature
175
o
C
150
o
C
Tstg
Storage Temperature
-65/175
o
C
-65/150
o
C
Pt
Total Power Dissipation
60W
50W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 310 De Guine Drive, Sunnyvale, CA 94085
Phone: (408) 737-1711 Fax: (408) 737-1868 Web Site: www.excelics.com
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