Excelics
EIA/EIB1718A-1P
PRELIMINARY DATA SHEET
17.3-18.1GHz, 1W Internally Matched Power FET
17.3-18.1GHz BANDWIDTH AND INPUT/OUTPUT
IMPEDANCE MATCHED TO 50 OHM
EIA FEATURES HIGH PAE( 25% TYPICAL)
EIB FEATURES HIGH IP3(43dBm TYPICAL)
+30.5/+29.5dBm TYPICAL P
1dB
OUTPUT POWER FOR
EIA/EIB
7.5/6.0dB TYPICAL G
1dB
POWER GAIN FOR EIA/EIB
NON-HERMETIC METAL FLANGE PACKAGE
ELECTRICAL CHARACTERISTICS (T
a
= 25
O
C)
EIA1718A-1P EIB1718A-1P
SYMBOLS PARAMETERS/TEST
CONDITIONS
MIN TYP MAX MIN TYP MAX
UNIT
P
1dB
Output Power at 1dB Compression f=17.3-18.1GHz
Vds=8V, Idsq=0.5 Idss(EIA), 0.6Idss(EIB)
29
30.5 29.0
29.5 dBm
G
1dB
Gain at 1dB Compression f=17.3-18.1GHz
Vds=8V, Idsq=0.5 Idss(EIA), 0.6Idss(EIB)
6.5
7.5 5.5
6.0 dB
PAE
Power Added Efficiency at 1dB compression
f=17.3-18.1GHz
Vds=8V, Idsq=0.5 Idss(EIA), 0.6Idss(EIB)
30 25 %
Id
1dB
Drain Current at 1dB Compression
440
425
mA
IP
3
Output 3
rd
Order Intercept Point f=17.3-18.1GHz
Vds=8V, Idsq=0.5 Idss(EIA), 0.6Idss(EIB)
37 43* dBm
I
dss
Saturated Drain Current Vds=3V, Vgs=0V
550
720
850
550
720
850
mA
G
m
Transconductance Vds=3V, Vgs=0V
760 360 mS
V
p
Pinch-off Voltage Vds=3V, Ids=6mA
-1.0
-2.5
-2.0
-3.5
V
BV
gd
Drain Breakdown Voltage Igd=2.4mA
-13
-15
-15
V
R
th
Thermal Resistance (Au-Sn Eutectic Attach)
16
16
o
C/W
*Typical 45dBc IM3 at Pout=20dBm/Tone
MAXIMUM RATINGS AT 25
O
C
SYMBOLS PARAMETERS
ABSOLUTE
1
CONTINUOUS
2
Vds
Drain-Source Voltage
12V
8V
Vgs
Gate-Source Voltage
-8V
-3V
Ids
Drain Current
Idss
Idss
Igsf
Forward Gate Current
90mA
15mA
Pin
Input Power
32dBm
@ 3dB Compression
Tch
Channel Temperature
175
o
C 150
o
C
Tstg
Storage Temperature
-65/175
o
C -65/150
o
C
Pt
Total Power Dissipation
8.5
7.1W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
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