EIB3439-4P
UPDATED
03/02/2006
3.40-3.90 GHz 4W Internally Matched Power FET
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 1 of 1
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
Revised March 2006
.161
Excelics
.400
.827 .669
.126
YYWW
ALL DIMENSIONS IN INCHES
.450
.508
.084
.052
SN
.120 MIN
.105
.004
.120 MIN
.020
SN
FEATURES
3.40-3.90 GHz Bandwidth
Input/Output Impedance Matched to 50 Ohms
+36.5 dBm Output Power at 1dB Compression
12.0 dB Power Gain at 1dB Compression
30% Power Added Efficiency
Non-Hermetic Metal Flange Package
ELECTRICAL CHARACTERISTICS (T
a
= 25
C)
Caution! ESD sensitive device.
SYMBOL PARAMETERS/TEST
CONDITIONS
1
MIN
TYP
MAX
UNITS
P
1dB
Output Power at 1dB Compression f = 3.40-3.90GHz
V
DS
= 8 V, I
DSQ
1600mA
35.5 36.5 dBm
G
1dB
Gain at 1dB Compression f = 3.40-3.90GHz
V
DS
= 8 V, I
DSQ
1600mA
11.0 12.0
dB
G
Gain Flatness f = 3.40-3.90GHz
V
DS
= 8 V, I
DSQ
1600mA
0.6
dB
PAE
Power Added Efficiency at 1dB Compression
V
DS
= 8 V, I
DSQ
1600mA f = 3.40-3.90GHz
30 %
Id
1dB
Drain Current at 1dB Compression f = 3.40-3.90GHz
1700
2000
mA
I
DSS
Saturated Drain Current
V
DS
= 3 V, V
GS
= 0 V
2800
3500
mA
V
P
Pinch-off Voltage
V
DS
= 3 V, I
DS
= 28 mA
-2.0
-3.5
V
R
TH
Thermal Resistance
2
5.5
6.0
o
C/W
Note: 1) Tested with 100 Ohm gate resistor.
2) Overall Rth depends on case mounting.
ABSOLUTE MAXIMUM RATING
1,2
SYMBOL CHARACTERISTIC ABSOLUTE
1
CONTINUOUS
2
V
DS
Drain to Source Voltage
12 V
8 V
V
GS
Gate to Source Voltage
-6.0 V
-4.0 V
I
GSF
Forward Gate Current
43.2 mA
14.4 mA
I
GSR
Reserve Gate Current
-7.2 mA
-2.4 mA
P
IN
Input Power
36.5 dBm
@ 3dB compression
T
CH
Channel
Temperature
175C
175C
T
STG
Storage
Temperature
-65/+175C -65/+175C
P
T
Total Power Dissipation
25 W
25 W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
EIC3439-4P
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