EIC0910-2
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 1 of 4
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
Revised April 2004
9.50-10.50 GHz 2-Watt Internally-Matched Power FET
Issued Date: 04-27-04
FEATURES
9.50-10.50
GHz
Bandwidth
Input/Output Impedance Matched to 50 Ohms
+33.5 dBm Output Power at 1dB Compression
8.0 dB Power Gain at 1dB Compression
30% Power Added Efficiency
-46 dBc IM3 at Po = 22.5 dBm SCL
Hermetic Metal Flange Package
100% Tested for DC, RF, and R
TH
DESCRIPTION
The EIC0910-2 is a high power, highly linear,
single stage MFET amplifier in a flange mount
package. This amplifier features Excelics' unique
PHEMT transistor technology.
Caution! ESD sensitive device.
ELECTRICAL CHARACTERISTICS (T
a
= 25
C)
SYMBOL PARAMETERS/TEST
CONDITIONS
1
MIN
TYP
MAX
UNITS
P
1dB
Output Power at 1dB Compression f = 9.50-10.50GHz
V
DS
= 10 V, I
DSQ
= 550mA
32.5 33.5
dBm
G
1dB
Gain at 1dB Compression f = 9.50-10.50GHz
V
DS
= 10 V, I
DSQ
= 550mA
7.0 8.0 dB
G
Gain Flatness f = 9.50-10.50GHz
V
DS
= 10 V, I
DSQ
= 550mA
0.6
dB
PAE
Power Added Efficiency at 1dB Compression
V
DS
= 10 V, I
DSQ
= 550mA f = 9.50-10.50GHz
30 %
Id
1dB
Drain Current at 1dB Compression f = 9.50-10.50GHz
600
700
mA
IM3
Output 3rd Order Intermodulation Distortion
f = 10 MHz 2-Tone Test; Pout = 22.5 dBm S.C.L
2
V
DS
= 10 V, I
DSQ
65% IDSS
f = 10.50GHz
-43 -46
dBc
I
DSS
Saturated Drain Current
V
DS
= 3 V, V
GS
= 0 V
1000
1250
mA
V
P
Pinch-off Voltage
V
DS
= 3 V, I
DS
= 10 mA
-2.5
-4.0
V
R
TH
Thermal Resistance
3
11
12
o
C/W
Notes:
1.
Tested with 100 Ohm gate resistor.
2.
S.C.L. = Single Carrier Level.
3.
Overall Rth depends on case mounting.
EIC0910-2
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 2 of 4
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
Revised April 2004
Issued Date: 04-27-04
ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION
1,2
SYMBOL CHARACTERISTIC
VALUE
V
DS
Drain to Source Voltage
10 V
V
GS
Gate to Source Voltage
-4.5 V
I
DS
Drain
Current
IDSS
I
GSF
Forward Gate Current
20 mA
P
IN
Input Power
@ 3dB compression
P
T
Total Power Dissipation
10 W
T
CH
Channel
Temperature
150C
T
STG
Storage
Temperature
-65/+150C
Notes:
1.
Operating the device beyond any of the above ratings may result in permanent damage or reduction of MTTF.
2.
Bias conditions must also satisfy the following equation P
T
< (T
CH
T
PKG
)/R
TH
; where T
PKG
= temperature of package, and
P
T
= (V
DS
* I
DS
) (P
OUT
P
IN
).
PERFORMANCE DATA
Typical S-Parameters (T= 25C, 50
system, de-embedded to edge of package)
V
DS
= 10 V, I
DSQ
= 550mA
0
1.0
-
1.0
1.0
10.
0
-10.0
10.
0
5.0
-5.0
5.0
2.0
-2
.0
2.
0
3.0
-3.
0
3.0
4.0
-4.0
4.0
0.2
-0.
2
0.2
0.4
-0
.4
0.
4
0.6
-0
.6
0.
6
0.8
-
0
.
8
0
.
8
0
1.
0
1.0
-
1.0
10
.0
10.0
-1
0.
0
5.
0
5.0
-5
.0
2.
0
2.
0
-2
.0
3.
0
3.
0
-3
.0
4.
0
4.0
-4
.0
0.
2
0.2
-0.
2
0.
4
0.
4
-0
.4
0.
6
0.
6
-0
.6
0.
8
0
.
8
-
0
.
8
S11 and S22
Swp Max
11GHz
Swp Min
9GHz
S[1,1] *
EIC0910-2
S[2,2] *
EIC0910-2
9
9.5
10
10.5
11
Frequency (GHz)
S21 and S12
-30
-20
-10
0
10
20
S2
1 a
n
d
S1
2 (d
B)
DB(|S[2,1]|) *
EIC0910-2
DB(|S[1,2]|) *
EIC0910-2
FREQ
--- S11 ---
--- S21 ---
--- S12 ---
--- S22 ---
(GHz)
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
8.75 0.801
-144.750
1.666 55.890 0.045 10.590 0.698 -25.380
9.00
0.748
-164.560
1.962
36.560
0.059
-9.970
0.658
-39.760
9.25 0.650
171.690
2.305 14.740 0.076 -32.680 0.600 -57.400
9.50
0.522
141.280
2.669
-10.520
0.098
-58.510
0.516
-79.320
9.75 0.364
101.620
2.943
-38.640
0.117 -86.820 0.405 -107.410
10.00
0.229
42.070
3.009
-67.750
0.130
-115.840
0.288
-144.010
10.25 0.227 -31.690 2.929 -95.780 0.134 -143.460 0.223 167.180
10.50
0.309
-80.620
2.712
-122.110
0.132
-168.960
0.232
122.730
10.75 0.369 -111.080 2.470 -146.280 0.126 168.060 0.276 93.950
11.00
0.399
-134.340
2.254
-168.390
0.123
146.710
0.329
75.830
11.25 0.402
-154.030
2.085 170.040 0.117 126.180 0.377 62.360
EIC0910-2
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 3 of 4
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
Revised April 2004
Issued Date: 04-27-04
Power De-rating Curve and IM3 Definition
Power Dissipation vs. Temperature
0
2
4
6
8
10
12
0
25
50
75
100
125
150
Case Temperature (C)
T
o
tal
P
o
w
e
r
D
i
s
s
i
pat
i
on (
W
)
Safe Operating
Region
Potentially Unsafe
Operating Region
f1 f2
(2f1-f2) f1 f2 (2f2-f1)
IM3
Pout
Pin
IP
3
= Pout + IM3/2
THIRD-ORDER
INTERCEPT POINT IP3
f1 or f2
(2f2 - f1) or (2f1 - f2)
Pin [S.C.L.] (dBm)
P
o
u
t
[S
.C.L
.]
(
d
B
m
)
IM3
Typical Power Data (V
DS
= 10 V, I
DSQ
= 550 mA)
Typical IM3 Data (V
DS
= 10 V,
I
DSQ
65% IDSS
)
P-1dB & G-1dB vs Frequency
32.00
33.00
34.00
35.00
36.00
37.00
9.4
9.6
9.8
10.0
10.2
10.4
10.6
Frequency (GHz)
P-
1
d
B (
d
Bm)
5.00
6.00
7.00
8.00
9.00
10.00
G
-
1
d
B (d
B)
P-1dB (dBm)
G-1dB (dB)
IM3 vs Output Power
f1 = 9.50 GHz, f2 = 9.51 GHz
-60
-55
-50
-45
-40
-35
-30
-25
-20
-15
17
18 19
20 21
22 23
24 25
26 27
28 29
30
Pout [S.C.L.] (dBm)
IM
3 (
d
B
c
)
IM3 (dBc)
EIC0910-2
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 4 of 4
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
Revised April 2004
Issued Date: 04-27-04
PACKAGE OUTLINE
Dimensions in inches, Tolerance + .005 unless otherwise specified
Excelics
SN
YM
ORDERING INFORMATION
Part Number
Grade
1
f
Test
(GHz)
P
1dB
(min)
IM
3
(min)
2
EIC0910-2 Industrial
9.50-10.50
GHz 32.5
-43.0
Notes: 1. Contact factory for military and hi-rel grades.
2. Exact test conditions are specified in "Electrical Characteristics" table.
EIC0910-2
SOURCE
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