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Электронный компонент: EIC1415-4

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EIC1415-4
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 1 of 4
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
Revised December 2003
14.40-15.35 GHz 4-Watt Internally-Matched Power FET
FEATURES
14.40-15.35
GHz
Bandwidth
Input/Output Impedance Matched to 50 Ohms
+36.0 dBm Output Power at 1dB Compression
5.0 dB Power Gain at 1dB Compression
25% Power Added Efficiency
-43 dBc IM3 at Po = 25.0 dBm SCL
Hermetic Metal Flange Package
100% Tested for DC, RF, and R
TH


DESCRIPTION
The EIC1415-4 is a high power, highly linear,
single stage MFET amplifier in a flange mount
package. This amplifier features Excelics' unique
MESFET transistor technology.
Caution! ESD sensitive device.
ELECTRICAL CHARACTERISTICS (T
a
= 25
C)
SYMBOL PARAMETERS/TEST
CONDITIONS
1
MIN
TYP
MAX
UNITS
P
1dB
Output Power at 1dB Compression f = 14.40-15.35GHz
V
DS
= 10 V, I
DSQ
1100mA
35.5 36.0
dBm
G
1dB
Gain at 1dB Compression f = 14.40-15.35GHz
V
DS
= 10 V, I
DSQ
1100mA
4.5 5.0 dB
G
Gain Flatness f = 14.40-15.35GHz
V
DS
= 10 V, I
DSQ
1100mA
0.6
dB
PAE
Power Added Efficiency at 1dB Compression
V
DS
= 10 V, I
DSQ
1100mA f = 14.40-15.35GHz
25 %
Id
1dB
Drain Current at 1dB Compression f = 14.40-15.35GHz
1100
1300
mA
IM3
Output 3rd Order Intermodulation Distortion
f = 10 MHz 2-Tone Test; Pout = 25.0 dBm S.C.L
2
V
DS
= 10 V, I
DSQ
65% IDSS
f = 15.35 GHz
-40 -43 dBc
I
DSS
Saturated Drain Current
V
DS
= 3 V, V
GS
= 0 V
2080
2880
mA
V
P
Pinch-off Voltage
V
DS
= 3 V, I
DS
= 20 mA
-2.5
-4.0
V
R
TH
Thermal Resistance
3
5.5
6.0
o
C/W
Notes:
1.
Tested with 100 Ohm gate resistor.
2.
S.C.L. = Single Carrier Level.
3.
Overall Rth depends on case mounting.






EIC1415-4
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 2 of 4
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
Revised December 2003
ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION
1,2
SYMBOL CHARACTERISTIC
VALUE
V
DS
Drain to Source Voltage
10 V
V
GS
Gate to Source Voltage
-4.5 V
I
DS
Drain
Current
IDSS
I
GSF
Forward Gate Current
40 mA
P
IN
Input Power
@ 3dB compression
P
T
Total Power Dissipation
25 W
T
CH
Channel
Temperature
150C
T
STG
Storage
Temperature
-65/+150C
Notes:
1.
Operating the device beyond any of the above ratings may result in permanent damage or reduction of MTTF.
2.
Bias conditions must also satisfy the following equation P
T
< (T
CH
T
PKG
)/R
TH
; where T
PKG
= temperature of package, and
P
T
= (V
DS
* I
DS
) (P
OUT
P
IN
).
PERFORMANCE DATA

Typical S-Parameters (T= 25C, 50
system, de-embedded to edge of package)
V
DS
= 10 V, I
DSQ
1100mA
0
1.
0
-1
.0
1.
0
10
.0
-10.0
10.
0
5.
0
-5.0
5.0
2.
0
-2
.0
2.
0
3.
0
-3.
0
3.0
4.
0
-4.0
4.0
0.
2
-0.
2
0.2
0.
4
-0
.4
0.
4
0.
6
-0
.6
0.
6
0.
8
-
0
.
8
0
.
8
0
1.
0
1.
0
-1
.0
10
.0
10.0
-1
0.
0
5.
0
5.0
-5
.0
2.
0
2.
0
-2
.0
3.
0
3.
0
-3
.0
4.
0
4.0
-4.
0
0.
2
0.2
-0.
2
0.
4
0.
4
-0
.4
0.
6
0.
6
-0
.6
0.
8
0
.
8
-
0
.
8
S11 and S22
Swp Max
16GHz
Swp Min
14GHz
S[1,1] *
EIC1415-4
S[2,2] *
EIC1415-4
14
14.5
15
15.5
16
Frequency (GHz)
S21 and S12
-30
-20
-10
0
10
20
S21 and S
1
2
(dB)
DB(|S[2,1]|) *
EIC1415-4
DB(|S[1,2]|) *
EIC1415-4
FREQ
--- S11 ---
--- S21 ---
--- S12 ---
--- S22 ---
(GHz)
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
14.0 0.6068 -49.15 1.877 -177.59 0.0891 165.79 0.3297 158.87
14.2
0.5179
-62.08
2.0095
167.01
0.0968
151.06
0.2845
136.09
14.4 0.408 -76.91
2.1124
149.96 0.1045 134.45 0.2476 108.17
14.6
0.2953
-96.76
2.1936
132.35
0.1105
118.01
0.229
75.76
14.8 0.1842
-124.53
2.2226 114.65 0.1123 100.02 0.2344 43.28
15.0
0.1005
-176.76
2.1863
96.84
0.1117
82.9
0.2691
14.39
15.2 0.1135 111.12 2.1382 79.55 0.1076 66.18 0.3153 -8.02
15.4
0.1828
73.41
2.0646
62.7
0.106
50.07
0.3511
-25.07
15.6 0.2549 50.97 1.9841 46.37 0.1007 34 0.3776 -41.25
15.8
0.3111
33.55
1.8752
30.24
0.0959
19.23
0.4118
-56.52
16.0 0.3548 18.22 1.7781 14.56 0.0921 3.91 0.4413 -70.84

EIC1415-4
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 3 of 4
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
Revised December 2003

Power De-rating Curve and IM3 Definition
Power Dissipation vs. Temperature
0
5
10
15
20
25
30
0
25
50
75
100
125
150
Case Temperature (C)
T
o
tal
P
o
w
e
r
D
i
s
s
i
pat
i
on (
W
)
Safe Operating
Region
Potentially Unsafe
Operating Region
f1 f2
(2f1-f2) f1 f2 (2f2-f1)
IM3
Pout
Pin
IP
3
= Pout + IM3/2
THIRD-ORDER
INTERCEPT POINT IP3
f1 or f2
(2f2 - f1) or (2f1 - f2)
Pin [S.C.L.] (dBm)
P
o
u
t
[S.C.L
.
]

(dBm
)
IM3

Typical Power Data (V
DS
= 10 V, I
DSQ
= 1100 mA)
Typical IM3 Data (V
DS
= 10 V,
I
DSQ
65% IDSS
)
P-1dB & G-1dB vs Frequency
32
33
34
35
36
37
14.4
14.6
14.8
15.0
15.2
15.4
Frequency (GHz)
P-
1
d
B (
d
Bm
)
3
4
5
6
7
8
G-
1
d
B
(
d
B
)
P-1dB (dBm)
G-1dB (dB)
IM3 vs Output Power
f1 = 15.30 GHz, f2 = 15.31 GHz
-55
-50
-45
-40
-35
-30
-25
-20
-15
19
20 21
22 23
24 25
26 27
28 29
30 31
32
Pout [S.C.L.] (dBm)
IM
3
(
d
B
c
)
IM3 (dBc)














EIC1415-4
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 4 of 4
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
Revised December 2003
PACKAGE OUTLINE
Dimensions in inches, Tolerance + .005 unless otherwise specified

Excelics
SN
YM
ORDERING INFORMATION
Part Number
Grade
1
f
Test
(GHz)
P
1dB
(min)
IM
3
(min)
2
EIC1415-4 Industrial
14.40-15.35 GHz
35.5
-40.0
Notes: 1. Contact factory for military and hi-rel grades.
2. Exact test conditions are specified in "Electrical Characteristics" table.

EIC1415-4
SOURCE