EIC7177-10
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 1 of 4
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
Revised October 2003
7.10-7.70 GHz 10-Watt Internally-Matched Power FET
FEATURES
7.10 7.70 GHz Bandwidth
Input/Output Impedance Matched to 50 Ohms
+40.5 dBm Output Power at 1dB Compression
9 dB Power Gain at 1dB Compression
35% Power Added Efficiency
-46 dBc IM3 at Po = 29.5 dBm SCL
Hermetic Metal Flange Package
100% Tested for DC, RF, and R
TH
DESCRIPTION
The EIC7177-10 is a high power, highly linear,
single stage MFET amplifier in a flange mount
package. This amplifier features Excelics' unique
MESFET transistor technology.
Caution! ESD sensitive device.
ELECTRICAL CHARACTERISTICS (T
a
= 25
C)
SYMBOL PARAMETERS/TEST
CONDITIONS
1
MIN
TYP
MAX
UNITS
P
1dB
Output Power at 1dB Compression f = 7.10-7.70GHz
V
DS
= 10 V, I
DSQ
3200mA
39.5 40.5
dBm
G
1dB
Gain at 1dB Compression f = 7.10-7.70GHz
V
DS
= 10 V, I
DSQ
3200mA
8.0 9.0 dB
G
Gain Flatness f = 7.10-7.70GHz
V
DS
= 10 V, I
DSQ
3200mA
0.6
dB
PAE
Power Added Efficiency at 1dB Compression
V
DS
= 10 V, I
DSQ
3200mA f = 7.10-7.70GHz
35 %
Id
1dB
Drain Current at 1Db Compression f = 7.10-7.70GHz
3200
3600
mA
IM3
Output 3rd Order Intermodulation Distortion
f = 10 MHz 2-Tone Test; Pout = 29.5 dBm S.C.L
2
V
DS
= 10 V, I
DSQ
65% IDSS f = 7.70 GHz
-43 -46 dBc
I
DSS
Saturated Drain Current
V
DS
= 3 V, V
GS
= 0 V
5800
6400
mA
V
P
Pinch-off Voltage
V
DS
= 3 V, I
DS
= 60 mA
-2.5
-4.0
V
R
TH
Thermal Resistance
3
2.5
3.0
o
C/W
Notes:
1.
Tested with 100 Ohm gate resistor.
2.
S.C.L. = Single Carrier Level.
3.
Overall Rth depends on case mounting.
EIC7177-10
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 2 of 4
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
Revised October 2003
0
1.0
1.0
-1.0
10.0
10.0
-1
0.0
5.0
5.0
-5
.0
2.0
2.
0
-2
.0
3.0
3.
0
-3
.0
4.0
4.
0
-4
.0
0.2
0.
2
-0.
2
0.4
0.4
-0
.4
0.6
0.
6
-0
.6
0.8
0
.
8
-
0
.8
S11 and S22
Swp Max
7.9GHz
Swp Min
6.9GHz
S[1,1]
EIC7177-10
S[2,2]
EIC7177-10
ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION
1,2
SYMBOL CHARACTERISTIC
VALUE
V
DS
Drain to Source Voltage
10 V
V
GS
Gate to Source Voltage
-4.5 V
I
DS
Drain
Current
IDSS
I
GSF
Forward Gate Current
120 mA
P
IN
Input Power
@ 3dB compression
P
T
Total Power Dissipation
42 W
T
CH
Channel
Temperature
150C
T
STG
Storage
Temperature
-65/+150C
Notes:
1.
Operating the device beyond any of the above ratings may result in permanent damage or reduction of MTTF.
2.
Bias conditions must also satisfy the following equation P
T
< (T
CH
T
PKG
)/R
TH
; where T
PKG
= temperature of package, and
P
T
= (V
DS
* I
DS
) (P
OUT
P
IN
).
PERFORMANCE DATA
Typical S-Parameters (T= 25C, 50
system, de-embedded to edge of package)
V
DS
= 10 V, I
DSQ
3200mA
6.9
7.1
7.3
7.5
7.7
7.9
Frequency (GHz)
S21 and S12
-20
-10
0
10
S
21
and S
1
2
(
d
B
)
DB(|S[2,1]|)
EIC7177-10
DB(|S[1,2]|)
EIC7177-10
FREQ
--- S11 ---
--- S21 ---
--- S12 ---
--- S22 ---
(GHz)
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
6.5 0.7175
-118.04
2.3853 -7.81 0.0894 -64.67 0.3979 134.6
6.7
0.6394
-138.29
2.5751
-32.99
0.0982
-88.45
0.4476
105.78
6.9 0.54
-161.16
2.7688
-59.03 0.1091 -114.52 0.4847 78.66
7.1
0.4059
172.55
2.9473
-86.83
0.1214
-141.21
0.4996
51.55
7.3 0.2293 138.08 3.0573 -116.9 0.1304 -170.74 0.4755 22.06
7.5
0.0747
37.07
3.0519
-148.09
0.135
158.19
0.4083
-11.96
7.7 0.2466
-62.75
2.8762
179.32 0.1302 126.14 0.3168 -54.79
7.9
0.4397
-98.59
2.5317
147.48
0.1164
95.19
0.261
-109.71
8.1
0.583
-126.77
2.1134
117.67
0.0983
66.91
0.2876
-160.97
8.3
0.6761
-150.57
1.7287
91.05
0.0833
40.52
0.3632
165.41
8.5
0.7392
-171.1
1.3981
66.41
0.0708
18.29
0.4355
143.08
EIC7177-10
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 3 of 4
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
Revised October 2003
Power De-rating Curve and IM3 Definition
Power Dissipation vs. Temperature
0
6
12
18
24
30
36
42
48
0
25
50
75
100
125
150
Case Temperature (C)
T
o
tal
P
o
w
e
r
D
i
s
s
i
pa
ti
o
n
(
W
)
Safe Operating
Region
Potentially Unsafe
Operating Region
f1 f2
(2f1-f2) f1 f2 (2f2-f1)
IM3
Pout
Pin
IP
3
= Pout + IM3/2
THIRD-ORDER
INTERCEPT POINT IP3
f1 or f2
(2f2 - f1) or (2f1 - f2)
Pin [S.C.L.] (dBm)
P
o
u
t
[S
.C.L
.]
(
d
B
m
)
IM3
Typical Power Data (V
DS
= 10 V, I
DSQ
= 3200 mA)
Typical IM3 Data (V
DS
= 10 V,
I
DSQ
65% IDSS
)
P-1dB & G-1dB vs Frequency
37
38
39
40
41
42
7.0
7.1
7.2
7.3
7.4
7.5
7.6
7.7
7.8
Frequency (GHz)
P-
1
d
B (
d
Bm)
7
8
9
10
11
12
G
-
1dB
(
d
B
)
P-1dB (dBm)
G-1dB (dB)
IM3 vs Output Power
f1 = 7.40 GHz, f2 = 7.41 GHz
-65
-60
-55
-50
-45
-40
-35
-30
-25
-20
-15
24
25
26
27
28
29
30
31
32
33
34
35
36
Pout [S.C.L.] (dBm)
IM
3
(
d
B
c
)
IM3 (dBc)
EIC7177-10
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 4 of 4
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
Revised October 2003
PACKAGE OUTLINE
Dimensions in inches, Tolerance + .005 unless otherwise specified
SN
Excelics
YM
ORDERING INFORMATION
Part Number
Grade
1
f
Test
(GHz)
P
1dB
(min)
IM
3
(min)
2
EIC7177-10 Industrial 7.1-7.7
GHz 39.5
-43
Notes: 1. Contact factory for military and hi-rel grades.
2. Exact test conditions are specified in "Electrical Characteristics" table.
EIC7177-10
SOURCE
PDF 
ZIP