EID1314-5
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 1 of 4
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
Revised January 2004
13.75-14.50 GHz 5-Watt Internally-Matched Power FET
FEATURES
13.75-14.50
GHz
Bandwidth
Input/Output Impedance Matched to 50 Ohms
+37.5 dBm Output Power at 1dB Compression
7.5 dB Power Gain at 1dB Compression
35% Power Added Efficiency
-38 dBc IM3 at Po = 26.5 dBm SCL
Hermetic Metal Flange Package
100% Tested for DC, RF, and R
TH
DESCRIPTION
The EID1314-5 is a high power, highly linear,
single stage MFET amplifier in a flange mount
package. This amplifier features Excelics' unique
PHEMT transistor technology.
Caution! ESD sensitive device.
ELECTRICAL CHARACTERISTICS (T
a
= 25
C)
SYMBOL PARAMETERS/TEST
CONDITIONS
1
MIN
TYP
MAX
UNITS
P
1dB
Output Power at 1dB Compression f = 13.75-14.50GHz
V
DS
= 10 V, I
DSQ
= 1200mA
37.0 37.5
dBm
G
1dB
Gain at 1dB Compression f = 13.75-14.50GHz
V
DS
= 10 V, I
DSQ
= 1200mA
6.5 7.5 dB
G
Gain Flatness f = 13.75-14.50GHz
V
DS
= 10 V, I
DSQ
= 1200mA
0.6
dB
PAE
Power Added Efficiency at 1dB Compression
V
DS
= 10 V, I
DSQ
= 1200mA f = 13.75-14.50GHz
35 %
Id
1dB
Drain Current at 1dB Compression f = 13.75-14.50GHz
1400
1800
mA
IM3
Output 3rd Order Intermodulation Distortion
f = 10 MHz 2-Tone Test; Pout = 26.5 dBm S.C.L
2
V
DS
= 10 V, I
DSQ
65% IDSS
f = 14.50GHz
-33 -38
*
dBc
I
DSS
Saturated Drain Current
V
DS
= 3 V, V
GS
= 0 V
2080
2880
mA
V
P
Pinch-off Voltage
V
DS
= 3 V, I
DS
= 20 mA
-2.5
-4.0
V
R
TH
Thermal Resistance
3
5.5
6.0
o
C/W
Notes:
1.
Tested with 100 Ohm gate resistor.
2.
S.C.L. = Single Carrier Level.
3.
Overall Rth depends on case mounting.
*
These devices are available screened for IM3 performance.
Please contact factory with your requirement.
EID1314-5
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 2 of 4
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
Revised January 2004
ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION
1,2
SYMBOL CHARACTERISTIC
VALUE
V
DS
Drain to Source Voltage
10 V
V
GS
Gate to Source Voltage
-4.5 V
I
DS
Drain
Current
IDSS
I
GSF
Forward Gate Current
40 mA
P
IN
Input Power
@ 3dB compression
P
T
Total Power Dissipation
23 W
T
CH
Channel
Temperature
150C
T
STG
Storage
Temperature
-65/+150C
Notes:
1.
Operating the device beyond any of the above ratings may result in permanent damage or reduction of MTTF.
2.
Bias conditions must also satisfy the following equation P
T
< (T
CH
T
PKG
)/R
TH
; where T
PKG
= temperature of package, and
P
T
= (V
DS
* I
DS
) (P
OUT
P
IN
).
PERFORMANCE DATA
Typical S-Parameters (T= 25C, 50
system, de-embedded to edge of package)
V
DS
= 10 V, I
DSQ
= 1200mA
0
1.
0
-
1.0
1.
0
10
.0
-10.0
10.
0
5.
0
-5.0
5.0
2.
0
-2
.0
2.
0
3.
0
-3.
0
3.0
4.
0
-4.0
4.0
0.
2
-0.
2
0.2
0.
4
-0
.4
0.
4
0.
6
-0
.6
0.
6
0.
8
-
0
.
8
0
.
8
0
1.
0
1.
0
-1
.0
10
.0
10.0
-1
0.
0
5.
0
5.0
-5
.0
2.
0
2.
0
-2
.0
3.
0
3.
0
-3
.0
4.
0
4.0
-4
.0
0.
2
0.
2
-0.
2
0.
4
0.
4
-0.4
0.
6
0.
6
-0
.6
0.
8
0
.
8
-
0
.
8
S11 and S22
Swp Max
15GHz
Swp Min
13GHz
S[1,1] *
EID1314-5
S[2,2] *
EID1314-5
13
13.5
14
14.5
15
Frequency (GHz)
S21 and S12
-30
-20
-10
0
10
20
S
2
1 an
d S
1
2 (
d
B
)
DB(|S[2,1]|) *
EID1314-5
DB(|S[1,2]|) *
EID1314-5
FREQ
--- S11 ---
--- S21 ---
--- S12 ---
--- S22 ---
(GHz)
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
13.0 0.4637 -51.26 2.2673
-134.00
-0.0465 148.59 0.6281 -127.18
13.2
0.4333
-64.29
2.3733
-147.22
-0.0500
162.65
0.5868
-135.36
13.4 0.3930 -77.23 2.4853
-161.29
-0.0561 176.02 0.5354 -144.04
13.6
0.3380
-90.79
2.5944
-176.44
0.0603
170.24
0.4755
-153.89
13.8 0.2552
-105.20
2.6962 167.96 0.0630 153.33 0.3950 -166.55
14.0
0.1524
-122.48
2.7628
151.12
0.0694
136.76
0.3036
177.97
14.2 0.0411
-169.43
2.7844 133.47 0.0703 119.55 0.2036 152.97
14.4
0.1025
54.46
2.7359
115.60
0.0691
101.22
0.1352
109.08
14.6 0.2214 33.93 2.6150 98.28 0.0693 84.19 0.1428 53.54
14.8
0.3322
20.00
2.4814
81.16
0.0659
66.29
0.2059
19.24
15.0 0.4199 7.64 2.3055 64.97 0.0616 52.11 0.2685 -0.63
EID1314-5
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 3 of 4
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
Revised January 2004
Power De-rating Curve and IM3 Definition
Power Dissipation vs. Temperature
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
0
25
50
75
100
125
150
Case Temperature (C)
T
o
tal
P
o
w
e
r
D
i
s
s
i
pa
ti
o
n
(
W
)
Safe Operating
Region
Potentially Unsafe
Operating Region
f1 f2
(2f1-f2) f1 f2 (2f2-f1)
IM3
Pout
Pin
IP
3
= Pout + IM3/2
THIRD-ORDER
INTERCEPT POINT IP3
f1 or f2
(2f2 - f1) or (2f1 - f2)
Pin [S.C.L.] (dBm)
P
o
u
t
[S
.C.L
.]
(
d
B
m
)
IM3
Typical Power Data (V
DS
= 10 V, I
DSQ
= 1200 mA)
Typical IM3 Data (V
DS
= 10 V,
I
DSQ
65% IDSS
)
P-1dB & G-1dB vs Frequency
34
35
36
37
38
39
13.6
13.8
14.0
14.2
14.4
14.6
Frequency (GHz)
P
-
1dB
(
d
B
m
)
6
7
8
9
10
11
G
-
1dB
(
d
B
)
P-1dB (dBm)
G-1dB (dB)
IM3 vs Output Power
f1 = 14.50 GHz, f2 = 14.51 GHz
-55
-50
-45
-40
-35
-30
-25
-20
-15
21
22
23
24
25
26
27
28
29
30
31
32
33
Pout [S.C.L.] (dBm)
IM
3
(
d
B
c
)
IM3 (dBc)
EID1314-5
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 4 of 4
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
Revised January 2004
PACKAGE OUTLINE
Dimensions in inches, Tolerance + .005 unless otherwise specified
Excelics
SN
YM
ORDERING INFORMATION
Part Number
Grade
1
f
Test
(GHz)
P
1dB
(min)
IM
3
(min)
2
EID1314-5 Industrial
13.75-14.50 GHz
37.0
-33.0
Notes: 1. Contact factory for military and hi-rel grades.
2. Exact test conditions are specified in "Electrical Characteristics" table.
EID1314-5
SOURCE
PDF 
ZIP