EMA205B
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 1 of 4
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
Revised May 2004
9-16 GHz Medium Power MMIC
FEATURES
9-16 GHz BANDWIDTH
+18.0 dBm TYPICAL OUTPUT POWER
14 dB
1.5 dB TYPICAL POWER GAIN
TWO SECTION, DISTRIBUTED AMPLIFIER
DUAL BIAS SUPPLY
0.3 MICRON RECESSED "MUSHROOM" GATE
Si
3
N
4
PASSIVATION
ADVANCED EPITAXIAL HETEROJUNCTION
PROFILE PROVIDES EXTRA HIGH POWER
EFFICIENCY, AND HIGH RELIABILITY
APPLICATIONS
Analog and Digital Wireless Systems
Military
Applications
C-Band Terrestrial Radio
Caution! ESD sensitive device.
ELECTRICAL CHARACTERISTICS (T
a
= 25
C)
SYMBOL PARAMETERS/TEST
CONDITIONS
1
MIN
TYP
MAX
UNITS
F
Operating Frequency Range
9
16
GHz
P
1dB
Ouput Power at 1dB Gain Compression @ Vdd=6V 50%
Idss
16.5 18.0 dBm
Gss
Small Signal Gain
12
14
dB
Gss
Small Signal Gain Flatness
1.5
2.0
dB
NF
Noise
Figure
4 dB
Input RL
Input Return Loss
9
dB
Output RL
Output Return Loss
7
dB
Idd
Power Supply Current
160
mA
Vdd
Power Supply Voltage
5
8
V
Notes:
1.
Tested with 100 Ohm gate resistor.
2.
S.C.L. = Single Carrier Level.
3.
Overall Rth depends on case mounting.
Chip Size 1060 x 2000 microns
Chip Thickness: 75
13 microns
All Dimensions In Microns
EMA205B
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 2 of 4
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
Revised May 2004
ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION
1,2
SYMBOL CHARACTERISTIC
VALUE
V
DS
Drain to Source Voltage
8 V
V
GS
Gate to Source Voltage
-3 V
I
DS
Drain Current
225 mA
I
GSF
Forward Gate Current
9 mA
P
IN
Input Power
@ 3dB compression
P
T
Total Power Dissipation
900 mW
T
CH
Channel
Temperature
150C
T
STG
Storage
Temperature
-65/+150C
Notes:
1.
Operating the device beyond any of the above ratings may result in permanent damage or reduction of MTTF.
2.
Bias conditions must also satisfy the following equation P
T
< (T
CH
T
PKG
)/R
TH
; where T
PKG
= temperature of package, and
P
T
= (V
DS
* I
DS
) (P
OUT
P
IN
).
S-PARAMETERS ( On wafer Sij measurements ) 5V, 1/2 Idss
FREQ
--- S11 ---
--- S21 ---
--- S12 ---
--- S22 ---
(GHz)
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
1
0.365 -129.2 0.276 82.1 0.0038 -28.6 0.620 -112.2
2
0.471
-172.2
0.441
47.4
0.0011
-88.5
0.844
-167.7
3
0.450 172.4 0.416 3.6 0.0008
-125.9 0.810 158.0
4
0.422
162.0
0.389
16.1
0.0006
-139.8
0.732
130.9
5
0.389 154.2 0.826 35.4 0.0007
-175.1 0.614 104.5
6
0.350
148.0
1.825
8.7
0.0011
160.0
0.430
73.8
7
0.312 143.6 3.185 -29.7 0.0020 139.7 0.185 34.2
8
0.276
141.4
4.559
-73.3
0.0030
97.5
0.078
-139.8
9
0.250 138.6 5.385 -117.5
0.0037 58.0 0.245 168.1
10
0.234
136.9
5.626
-159.0
0.0045
18.1
0.300
137.5
11 0.226 139.7 5.497 166.2 0.0052 -10.6 0.275 115.0
12
0.221
141.9
5.350
136.0
0.0052
-34.2
0.214
99.9
13
0.222
140.6
5.326
107.4
0.0060
-54.4
0.149
95.2
14
0.220
135.3
5.360
79.5
0.0067
-76.5
0.092
109.1
15
0.235
131.2
5.594
50.3
0.0077
-103.0
0.088
149.1
16
0.271
127.6
6.062
18.7
0.0101
-130.2
0.132
172.4
17
0.385
119.2
6.709
-17.2
0.0122
-160.7
0.205
176.3
18
0.511
89.3
6.771
-59.4
0.0122
160.1
0.314
172.1
19
0.577
53.6
5.973
-105.7
0.0111
115.1
0.457
159.6
20
0.577
21.6
4.309
-151.4
0.0072
74.4
0.608
141.4
21
0.564
-2.5
2.567
171.8
0.0022
33.0
0.711
119.8
22
0.589
-23.7
1.423
155.1
0.0004
127.1
0.733
98.4
23
0.606
-42.8
1.095
146.8
0.0018
108.7
0.686
81.3
24
0.623
-58.4
0.917
130.5
0.0021
87.5
0.628
69.0
25
0.6426
-70.4
0.754
112.2
0.0023
72.2
0.585
59.3
26
0.664
-79.7
0.607
94.3
0.0027
75.1
0.555
50.8
27
0.694
-88.2
0.487
76.6
0.0031
76.8
0.531
42.8
28
0.732
-98.1
0.399
58.6
0.0026
68.9
0.511
34.9
29
0.761
-106.2
0.330
41.6
0.0015
58.9
0.496
27.0
30
0.791
-114.1
0.271
24.2
0.0014
23.6
0.480
19.1
EMA205B
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 3 of 4
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
Revised May 2004
ASSEMBLY DRAWING
50pF
50 ohm line on Alumina
RF OUTPUT
RF INPUT
50 ohm line on Alumina
50pF
50pF
0.1uF
VGG
VDD
0.1uF
BOND
PAD
Cap.
MIM
The length of RF wires should be as short as possible. Use at least two wires between RF pad and 50 ohm line and separate
the wires to minimize the mutual inductance.
CAUTION
:
Bonding tip and wires MUST stay within pad dimensions as illustrated in CHIP OUTLINE below.
Violation may cause damages on components in chip (especially damaging output MIM capacitor as
shown on above zoom-in graph).
CHIP OUTLINE (dimensions in microns)
0
620
1060
17
3
0
15
8
0
330
15
8
0
0
20
00
90
(V
G1
-4)
100
(V
D2)
(RF IN)
(RF OUT)
(
VD1
)
(VD
3-4)
330
68
105
Chip Size 1060 x 2000 microns
Chip Thickness: 75
13 microns
PAD Dimensions: 1. DC 100 x 100 microns
2. RF 80 x 68 microns
EMA205B
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 4 of 4
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
Revised May 2004
TYPICAL APPLICATION PERFORMANCE
Small Signal Gain Vdd=5V Idd=125mA
0
5
10
15
20
25
0
5
10
15
20
25
30
frequency [GHz]
S
m
all S
i
gnal G
a
in [
d
B
]
Input & Output Return loss
Vdd=5V Idd=125mA
-25
-20
-15
-10
-5
0
0
5
10
15
20
25
30
frequency [GHz]
Re
tu
rn
lo
ss [d
B]
Input
Output
Noise Figure Vd=3.5V Id=150mA
0
2
4
6
8
10
12
5
10
15
20
Frequency [GHz]
Noise Figure [
d
B
]
P1dB Vdd=5V
0
5
10
15
20
25
8
10
12
14
16
18
frequency [GHz]
P1
d
B
[d
Bm
]
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