EMP105A
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
DATA SHEET
ISSUED DATE: 02-24-04
4.0 5.5 GHz Power Amplifier MMIC
FEATURES
4.0 5.5 GHz Bandwidth
32.5dBm Output Power at 1dB Compression
17 dB Typical Power Gain
APPLICATIONS
Point-to-point and point-to-multipoint radio
ELECTRICAL CHARACTERISTICS (T
a
= 25
C)
SYMBOL PARAMETER/TEST
CONDITIONS MIN
TYP
MAX
UNITS
F
Operating Frequency Range
4.0
5.5
GHz
P
1dB
Output Power at 1dB Gain Compression
32.5
dBm
Gss
Small Signal Gain
16
18
dB
IP3
Third Order Intercept
42.5
dBm
Input RL
Input Return Loss
8
11
dB
Output RL Output Return Loss
6
dB
Idd
Power Supply Current
950
mA
Vdd
Power Supply Voltage
10
V
Rth
Thermal Resistance (Au-Sn Eutectic Attach)
7
o
C/W
ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION
1,2
SYMBOL CHARACTERISTIC
VALUE
V
DS
Drain to Source Voltage
10 V
V
GS
Gate to Source Voltage
-4 V
I
DD
Drain
Current
Idss
I
GSF
Forward Gate Current
35mA
P
IN
Input Power
@ 3dB compression
T
CH
Channel
Temperature
150C
T
STG
Storage
Temperature
-65/150C
P
T
Total
Power
Dissipation
17W
1. Operating the device beyond any of the above rating may result in permanent damage.
2. Bias conditions must also satisfy the following equation V
DS
*I
DS
< (T
CH
T
HS
)/R
TH
; where T
HS
= ambient temperature
EMP105A
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
DATA SHEET
ISSUED DATE: 02-24-04
4.0 5.5 GHz Power Amplifier MMIC
ASSEMBLY
DRAWING
CHIP
OUTLINE
TYPICAL PERFORMANCE
3
4
5
6
7
Frequency (GHz)
Small Signal Performance
-20
-15
-10
-5
0
5
10
15
20
25
dB[S21]
dB[S11]
dB[S22]
Data measured @ Vd=10V, Ids=950mA
Chip size: 3530 X 2200 microns
Chip thickness: 75 + 13 microns
All dimensions in microns
P1dB performance
30
30.5
31
31.5
32
32.5
33
33.5
34
34.5
35
3
4
5
6
7
Frequency (GHz)
dB
m
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