EMP109
UPDATED
12/15/2004
5.0 6.5 GHz Power Amplifier MMIC
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 1 of 3
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
Revised December 2004
Dimension: 1130um X 2250um
Thickness: 85um + 15um
FEATURES
5.0 6.5 GHz Operating Frequency Range
27.0dBm Output Power at 1dB Compression
20.0 dB Typical Small Signal Gain
-41dBc OIMD3 @Each Tone Pout 17 dBm
APPLICATIONS
Point-to-point and point-to-multipoint radio
Military Radar Systems
Caution! ESD sensitive device.
ELECTRICAL CHARACTERISTICS
(
Tb = 25
C,
50 ohm, Vds =
7 V, Idsq = 400 mA, Unless Otherwise Specified
)
SYMBOL PARAMETER/TEST
CONDITIONS MIN
TYP
MAX
UNITS
F
Operating Frequency Range
5.0
6.5
GHz
P1dB
Output Power at 1dB Gain Compression
26.0 27.0
dBm
Gss
Small Signal Gain
17.0
20.0
dB
OIMD3
Output 3
rd
Order Intermodulation Distortion
@f=10MHz, Each Tone Pout 17dBm, 7V, 60%+10%Idss
-41
-38
dBc
Input RL
Input Return Loss
-12
-8
dB
Output RL Output Return Loss
-6
dB
Idss
Saturated Drain Current Vds =3V, V
GS
=0V
490
570
660
mA
Vds
Drain to Source Voltage
7
8
V
NF
Noise Figure @6GHz
7
dB
Rth
Thermal Resistance (Au-Sn Eutectic Attach)
22
o
C/W
Tb
Operating Base Plate Temperature
-
35 +
85 C
MAXIMUM RATINGS AT 25C
1,2
SYMBOL CHARACTERISTIC
ABSOLUTE CONTINUOUS
Vds
Drain to Source Voltage
12V
8 V
V
GS
Gate to Source Voltage
-8V
-
4 V
Ids Drain
Current
Idss
650mA
I
GSF
Forward Gate Current
57mA
9.5 mA
P
IN
Input Power
24dBm
@ 3dB compression
T
CH
Channel
Temperature
175C
150C
T
STG
Storage
Temperature
-65/175C
-65/150C
P
T
Total
Power
Dissipation
6.2W
5.2W
1. Operating the device beyond any of the above rating may result in permanent damage.
2. Bias conditions must also satisfy the following equation Vds*Ids < (T
CH
Tb)/R
TH
EMP109
UPDATED
12/15/2004
5.0 6.5 GHz Power Amplifier MMIC
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 2 of 3
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
Revised December 2004
Typical Performance:
1.
Small Signal Performance
(@7V, 400mA)
4
5
6
7
8
Frequency (GHz)
EMP109 Small Signal Performance
-25
-20
-15
-10
-5
0
5
10
15
20
25
DB(|S[2,1]|) *
DB(|S[1,1]|) *
DB(|S[2,2]|) *
2. OIMD VS Pout @7V, 400mA
(@6GHz, f=10MHz)
3. P-1 VS Vds @Idsq=400mA
EMP109 OIMD (dBc) vs. Pout(dBm)
-70
-65
-60
-55
-50
-45
-40
-35
-30
-25
-20
-15
-10
-5
0
0
5
10
15
20
25
Each Tone Pout (dBm)
OI
M
D
(
d
B
c
)
OIMD3
OIMD5
EMP109 P1dB(dBm) vs. Vds
22
23
24
25
26
27
28
29
30
4
5
6
7
8
Frequency (GHz)
dB
m
Vds=5V
Vds=7V
APPLICATION INFORMATION (CAUTION: THIS IS AN ESD SENSITIVE DEVICE)
Chip carrier should match GaAs thermal coefficienat of expansion and have high thermal conductivity, such as copper
tungsten or copper molybdenum. The chip carrier should be nickel-gold plated and capable of withstanding 325C for 20
minutes.
Die attach should be done with Gold/Tin (80/20) eutectic alloy in inert ambient gas. The backside is used as heatsinking,
DC, and RF contacts.
All die attach and wire bond equipment, especially the tools which touch a die, should be well grounded to avoid accidental
discharge through a die.
EMP109
UPDATED
12/15/2004
5.0 6.5 GHz Power Amplifier MMIC
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 3 of 3
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
Revised December 2004
ASSEMBLY DRAWING
The length of RF wires should be as short as possible. Use at least two wires between RF pad and 50 ohm line
and separate the wires to minimize the mutual inductance.
Chip Size 1130 x 2250 microns
Chip Thickness: 85
15 microns
PAD Dimensions: 100 x 100 microns
All Dimensions in Microns
CHIP OUTLINE
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