EMP210
UPDATED
06/24/2005
9.5 12 GHz Power Amplifier MMIC
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 1 of 2
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
Revised June 2005
Dimension: 2250um X 1000um
Thickness: 75um 13um
FEATURES
9.5 12.0 GHz Operating Frequency Range
24.0dBm Output Power at 1dB Compression
18.0 dB Typical Small Signal Gain
-41dBc OIMD3 @Each Tone Pout 12.5dBm
APPLICATIONS
Point-to-point and point-to-multipoint radio
Military Radar Systems
Caution! ESD sensitive device.
ELECTRICAL CHARACTERISTICS (T
a
= 25
C,
50 ohm, VDD=7V, IDQ=180mA)
SYMBOL PARAMETER/TEST
CONDITIONS MIN
TYP
MAX
UNITS
F
Operating Frequency Range
9.5
12.0
GHz
P1dB
Output Power at 1dB Gain Compression
22.5 24.0
dBm
Gss
Small Signal Gain
15.0
18.0
dB
OIMD3
Output 3
rd
Order Intermodulation Distortion
@f=10MHz, Each Tone Pout 12.5dBm
Vdd=7V, Idsq=60%10%Idss
-41 -38 dBc
Input RL
Input Return Loss
-10
-8
dB
Output RL
Output Return Loss
-8
-5
dB
Idss
Saturated Drain Current V
DS
=3V, V
GS
=0V
211
264
317
mA
V
DD
Drain Voltage
7
8
V
Rth
Thermal Resistance (Au-Sn Eutectic Attach)
34
o
C/W
Tb
Operating Base Plate Temperature
-35
+85
C
MAXIMUM RATINGS AT 25C
1,2
SYMBOL CHARACTERISTIC
ABSOLUTE
CONTINUOUS
V
DS
Drain to Source Voltage
12V
8 V
V
GS
Gate to Source Voltage
-8V
-4 V
I
DD
Drain
Current
Idss
264
I
GSF
Forward Gate Current
24mA
4mA
P
IN
Input Power
20dBm
@ 3dB compression
T
CH
Channel
Temperature
175C
150C
T
STG
Storage
Temperature
-65/175C
-65/150C
P
T
Total
Power
Dissipation
4.1W
3.4W
1. Operating the device beyond any of the above rating may result in permanent damage.
2. Bias conditions must also satisfy the following equation V
DS
*I
DS
< (T
CH
T
HS
)/R
TH
; where T
HS
= ambient temperature
EMP210
UPDATED
06/24/2005
9.5 12 GHz Power Amplifier MMIC
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 2 of 2
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
Revised June 2005
ASSEMBLY DRAWING
The length of RF wires should be as short as possible. Use at least two wires between RF pad and 50 ohm line and
separate the wires to minimize the mutual inductance.
CHIP OUTLINE
Chip Size 1000 x 2250 microns
Chip Thickness: 75
13 microns
PAD Dimensions: 100 x 100 microns
All Dimensions in Microns
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