EMP307
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
21.0 24.0 GHz Power Amplifier MMIC
Issued Date: 12-18-03
FEATURES
21.0 24.0 GHz Bandwidth
30dBm Output Power at 1dB Compression
16 dB Typical Power Gain
APPLICATIONS
Point-to-point and point-to-multipoint radio
Military Radar Systems
ELECTRICAL CHARACTERISTICS (T
a
= 25
C)
SYMBOL PARAMETER/TEST
CONDITIONS MIN
TYP
MAX
UNITS
F
Operating Frequency Range
21
24
GHz
P
1dB
Output Power at 1dB Compression
V
DS
= 8 V, I
DSQ
1/2 I
DSS
29 30 dBm
Gss
Small Signal Gain
14
16
dB
IP3
Third Order Interception Point
36.5
dBm
Input RL
Input Return Loss
10
15
dB
Output RL
Output Return Loss
10
15
dB
Idd
Power Supply Current
540
760
mA
Vdd
Power Supply Voltage
7
8
V
Rth
Thermal Resistance (Au-Sn Eutectic Attach)
9
o
C/W
ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION
1,2
SYMBOL CHARACTERISTIC
VALUE
V
DS
Drain to Source Voltage
8 V
V
GS
Gate to Source Voltage
-3 V
I
DD
Drain
Current
1080mA
I
GSF
Forward Gate Current
30mA
P
IN
Input Power
@ 3dB compression
T
CH
Channel
Temperature
150C
T
STG
Storage
Temperature
-65/150C
P
T
Total
Power
Dissipation
12.6W
1. Operating the device beyond any of the above rating may result in permanent damage.
2. Bias conditions must also satisfy the following equation V
DS
*I
DS
< (T
CH
T
HS
)/R
TH
;
where T
HS
= ambient temperature
Dimension: 2200um X 2650um
EMP307
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
21.0 24.0 GHz Power Amplifier MMIC
Issued Date: 12-18-03
Typical Performance:
1. P-1 and G-1
P307 P-1 & G-1
16
18
20
22
24
26
28
30
32
20.5
21
21.5
22
22.5
23
23.5
24
24.5
Frequency (GHz)
P-1 (dBm)
G-1 (dB)
2. Small Signal Performance
20
21
22
23
24
25
Frequency (GHz)
EMP307 Small Signal Performance
-30
-20
-10
0
10
20
30
DB(|S[1,1]|) *
P307 MT291 sn2 7V 540mA
DB(|S[2,1]|) *
P307 MT291 sn2 7V 540mA
DB(|S[2,2]|) *
P307 MT291 sn2 7V 540mA
EMP307
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
21.0 24.0 GHz Power Amplifier MMIC
Issued Date: 12-18-03
ASSEMBLY DRAWING
The length of RF wires should be as short as possible. Use at least two wires between RF pad and 50
ohm line and separate the wires to minimize the mutual inductance.
CHIP OUTLINE
Chip Size 2200 x 2650 microns
Chip Thickness: 75
13 microns
PAD Dimensions: 100 x 100 microns
All Dimensions in Microns
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