ChipFind - документация

Электронный компонент: EMP308

Скачать:  PDF   ZIP
EMP308
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
24.526.5 GHz Power Amplifier MMIC
Issued Date: 12-18-03
FEATURES
24.5 26.5 GHz Bandwidth
27.5dBm Output Power at 1dB Compression
16 dB Typical Power Gain
APPLICATIONS
Point-to-point and point-to-multipoint radio
Military Radar Systems
Dimension: 2250um X 1130um
ELECTRICAL CHARACTERISTICS (T
a
= 25
C)
SYMBOL PARAMETER/TEST
CONDITIONS MIN
TYP
MAX
UNITS
F
Operating Frequency Range
24.5
26.5
GHz
P
1dB
Output Power at 1dB Compression
V
DS
= 8 V, I
DSQ
1/2 I
DSS
26.5 27.5 dBm
Gss
Small Signal Gain
14
16
dB
IP3
Third Order Interception Point
34
dBm
Input RL
Input Return Loss
8
10
dB
Output RL
Output Return Loss
3
6
dB
Idd
Power Supply Current
270
380
mA
Vdd
Power Supply Voltage
7
8
V
Rth
Thermal Resistance (Au-Sn Eutectic Attach)
18
o
C/W
ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION
1,2
SYMBOL CHARACTERISTIC
VALUE
V
DS
Drain to Source Voltage
8 V
V
GS
Gate to Source Voltage
-3 V
I
DD
Drain
Current
540mA
I
GSF
Forward Gate Current
15mA
P
IN
Input Power
@ 3dB compression
T
CH
Channel
Temperature
150C
T
STG
Storage
Temperature
-65/150C
P
T
Total
Power
Dissipation
6.3W
1. Operating the device beyond any of the above rating may result in permanent damage.
2. Bias conditions must also satisfy the following equation V
DS
*I
DS
< (T
CH
T
HS
)/R
TH
;
where T
HS
= ambient temperature
EMP308
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
24.526.5 GHz Power Amplifier MMIC
Issued Date: 12-18-03
Typical Performance:
1. P-1 and G-1
P308 P-1 & G-1
at 8V,300mA
16
18
20
22
24
26
28
30
24 24.5 25
25.5 26 26.5 27 27.5 28
28.5 29 29.5
Frequency (GHz)
P-1 (dBm)
G-1 (dB)
2. Small Signal Performance
24
25
26
27
28
29
30
Frequency (GHz)
EMP308 Small Signal Performance
-20
-10
0
10
20
30
DB(|S[1,1]|) *
P308 MT291 sn1 7V 270mA
DB(|S[2,1]|) *
P308 MT291 sn1 7V 270mA
DB(|S[2,2]|) *
P308 MT291 sn1 7V 270mA
EMP308
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
24.526.5 GHz Power Amplifier MMIC
Issued Date: 12-18-03
ASSEMBLY DRAWING
CHIP OUTLINE

Chip Size 1130 x 2250 microns
Chip Thickness: 75
13 microns
PAD Dimensions: 100 x 100 microns
All Dimensions in Microns