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Электронный компонент: EPA080A-100F

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EPA080A-100F
ISSUED
08/10/2005
High Efficiency Heterojunction Power FET
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 1 of 2
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
Revised August 2005
.0980.006
.004+0.0020
-0.0005
.0350.003
.256+0.020
-0.040
.256+0.020
-0.016
B1
.240
4X RAD .010
G
2X DIA .063
.098
D .0240.003
.024
.031
.335
.070
DIMENSION: INCH
FEATURES
HERMETIC 100mil CERAMIC FLANGE
PACKAGE
+27.5dBm TYPICAL OUTPUT POWER
8.5dB TYPICAL POWER GAIN AT 12GHz
Si3N4 PASSIVATION
ADVANCED EPITAXIAL HETEROJUNCTION
PROFILE PROVIDES EXTRA HIGH POWER
EFFICIENCY, AND HIGH RELIABILITY




ELECTRICAL CHARACTERISTICS (T
a
= 25
C)
Caution! ESD sensitive device.
SYMBOLS
PARAMETERS/TEST CONDITIONS
MIN
TYP
MAX
UNIT
P
1dB
Output Power at 1dB Compression f=12GHz
Vds=8V, Ids=50% Idss
26.0 27.5
dBm
G
1dB
Gain at 1dB Compression f=12GHz
Vds=8V, Ids=50% Idss
7.0 8.5
dB
PAE
Power Added Efficiency at 1dB Compression
Vds=8V, Ids=50% Idss f=12GHz
42
%
Idss
Saturated Drain Current Vds=3V, Vgs=0V
130
240
320
mA
Gm
Transconductance Vds=3V, Vgs=0V
160
260
mS
Vp
Pinch-off Voltage Vds=3V, Ids=2.5mA
-1.0 -2.5 V
BVgd
Drain Breakdown Voltage Igd=1.0mA
-11
-15
V
BVgs
Source Breakdown Voltage Igs=1.0mA
-7
-14
V
Rth
Thermal Resistance
58*
o
C/W
Overall Rth depends on case mounting.
MAXIMUM RATINGS AT 25
o
C
SYMBOLS
PARAMETERS
ABSOLUTE
1
CONTINUOUS
2
Vds
Drain-Source Voltage
12V
8V
Vgs
Gate-Source Voltage
-8V
-3V
Ids
Drain Current
Idss
250mA
Igsf
Forward Gate Current
40mA
7mA
Pin
Input Power
25dBm
@3dB Compression
Tch
Channel Temperature
175oC
150oC
Tstg
Storage Temperature
-65/175oC
-65/150oC
Pt
Total Power Dissipation
2.5W
2.0W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
EPA080A-100F
ISSUED
08/10/2005
High Efficiency Heterojunction Power FET
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 2 of 2
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
Revised August 2005


S-PARAMETERS
8V, 1/2 Idss
FREQ
S11 ---
S21 ---
S12 ---
S22 ---
(GHz) MAG ANG MAG ANG MAG ANG MAG ANG
1.0 0.891 -72.9
13.691
129.5 0.027 52.8 0.442 -43.0
2.0 0.793
-113.6
9.350 99.6 0.037 34.9 0.383 -64.0
3.0 0.745
-136.8
6.955 79.3 0.041 27.7 0.363 -76.6
4.0 0.713
-157.6
5.601 61.6 0.046 21.5 0.360 -87.0
5.0 0.693
-176.8
4.738 44.8 0.050 16.0 0.349 -95.4
6.0 0.681
170.3 4.131 29.3 0.055 9.8 0.312
-109.7
7.0 0.669
156.6 3.653 13.7 0.059 2.2 0.302
-128.5
8.0 0.655 143.8 3.254 -1.5 0.063 -4.8 0.317 -147.6
9.0 0.667
124.6 2.867 -17.2 0.066 -13.2 0.346 -152.2
10.0 0.679 112.0 2.584 -32.1 0.073 -21.9 0.352 -160.8
11.0 0.650 107.2 2.466 -47.5 0.083 -32.5 0.369 175.6
12.0 0.594 98.6 2.339 -63.8 0.094 -43.9 0.416 159.0
13.0 0.589 80.7 2.163 -79.5 0.105 -54.9 0.417 158.1
14.0 0.601 63.9 2.034 -96.0 0.122 -68.8 0.381 150.6
15.0 0.567 51.1 1.903 -116.3 0.141 -85.8 0.405 121.5
16.0 0.529 41.2 1.756 -135.6 0.162 -102.1 0.452 104.0
17.0 0.531 34.3 1.672 -152.7 0.196 -116.3 0.461 105.2
18.0 0.512 28.0 1.588 -172.7 0.246 -133.5 0.489 96.7
19.0 0.504 23.8 1.406 166.8 0.299 -153.4 0.560 75.9
20.0 0.616 14.9 1.332 148.0 0.401 -173.7 0.629 65.9