Excelics
EPA120A/EPA120AV
DATA SHEET
High Efficiency Heterojunction Power FET
+29.5dBm TYPICAL OUTPUT POWER
9.5dB TYPICAL POWER GAIN FOR EPA120A AND
10.5dB FOR EPA120AV AT 18GHz
0.3 X 1200 MICRON RECESSED "MUSHROOM" GATE
Si
3
N
4
PASSIVATION
ADVANCED EPITAXIAL DOPING PROFILE
PROVIDES HIGH POWER EFFICIENCY,
LINEARITY AND RELIABILITY
EPA120AV WITH VIA HOLE SOURCE GROUNDING
Idss SORTED IN 30mA PER BIN RANGE
ELECTRICAL CHARACTERISTICS (T
a
= 25
O
C)
SYMBOLS
PARAMETERS/TEST CONDITIONS
EPA120A
EPA120AV
UNIT
MIN
TYP
MAX
MIN
TYP
MAX
Output Power at 1dB Compression f=12GHz
29.5
29.5
P
1dB
Vds=8V, Ids=50% Idss f=18GHz
28.0
29.5
28.0
29.5
dBm
Gain at 1dB Compression f=12GHz
10.0
12.0
10.5
12.5
G
1dB
Vds=8V, Ids=50% Idss f=18GHz
9.5
10.5
dB
Gain at 1dB Compression
PAE
Vds=8V, Ids=50% Idss f=12GHz
45
46
%
Idss
Saturated Drain Current Vds=3V, Vgs=0V
220
360
500
220
360
500
mA
Gm
Transconductance Vds=3V, Vgs=0V
240
380
240
380
mS
Vp
Pinch-off Voltage Vds=3V, Ids=3.5mA
-1.0
-2.5
-1.0
-2.5
V
BVgd
Drain Breakdown Voltage Igd=1.2mA
-11
-15
-11
-15
V
BVgs
Source Breakdown Voltage Igs=1.2mA
-7
-14
-7
-14
V
Rth
Thermal Resistance (Au-Sn Eutectic Attach)
37
27
o
C/W
MAXIMUM RATINGS AT 25
O
C
SYMBOLS
PARAMETERS
EPA120A
EPA120AV
ABSOLUTE
1
CONTINUOUS
2
ABSOLUTE
1
CONTINUOUS
2
Vds
Drain-Source Voltage
12V
8V
12V
8V
Vgs
Gate-Source Voltage
-8V
-3V
-8V
-3V
Ids
Drain Current
Idss
385mA
Idss
Idss
Igsf
Forward Gate Current
60mA
10mA
60mA
10mA
Pin
Input Power
27dBm
@ 3dB
Compression
27dBm
@ 3dB
Compression
Tch
Channel Temperature
175
o
C
150
o
C
175
o
C
150
o
C
Tstg
Storage Temperature
-65/175
o
C
-65/150
o
C
-65/175
o
C
-65/150
o
C
Pt
Total Power Dissipation
3.7W
3.1W
5.0W
4.2W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
Chip Thickness: 75
20 microns
All Dimensions In Microns
: Via Hole
No Via Hole For EPA120A
EPA120A/EPA120AV
DATA SHEET
High Efficiency Heterojunction Power FET
EPA120A
S-PARAMETERS
EPA120A 8V, 1/2 Idss
FREQ --- S11 --- --- S21 --- --- S12 --- --- S22 --- FREQ --- S11 --- --- S21 --- --- S12 --- --- S22 ---
(GHz) MAG ANG MAG ANG MAG ANG MAG ANG (GHz) MAG ANG MAG ANG MAG ANG MAG ANG
1.0 0.902 -95.7 15.160 125.3 0.030 41.8 0.305 -68.3 21.0 0.898 157.5 0.776 -8.5 0.041 21.0 0.674 -170.7
2.0 0.891 -131.8 9.261 103.2 0.036 25.7 0.252 -96.8 22.0 0.899 157.6 0.727 -12.2 0.042 22.3 0.691 -174.7
4.0 0.879 -157.0 4.926 81.5 0.038 14.7 0.254 -116.2 24.0 0.897 151.5 0.634 -20.6 0.045 23.3 0.721 -179.0
6.0 0.882 -166.8 3.290 67.5 0.037 11.8 0.290 -126.9 26.0 0.909 148.8 0.557 -29.2 0.051 24.6 0.741 172.1
8.0 0.882 -176.2 2.498 54.3 0.036 12.3 0.351 -132.3 28.0 0.918 151.8 0.484 -36.6 0.056 23.4 0.756 158.7
10.0 0.883 175.0 1.984 42.0 0.035 12.1 0.424 -138.9 30.0 0.915 148.1 0.424 -44.0 0.059 21.5 0.787 152.2
12.0 0.892 171.6 1.603 31.3 0.034 13.6 0.479 -147.5 32.0 0.913 143.6 0.365 -51.2 0.060 17.6 0.807 148.1
14.0 0.900 168.9 1.302 21.7 0.033 16.2 0.534 -154.8 34.0 0.911 140.5 0.318 -56.9 0.058 18.3 0.822 146.3
16.0 0.906 166.1 1.075 12.8 0.033 18.1 0.590 -159.7 36.0 0.918 136.7 0.287 -60.3 0.063 18.2 0.841 145.6
18.0 0.907 161.8 0.903 4.7 0.034 20.3 0.629 -161.4 38.0 0.929 135.7 0.270 -64.3 0.069 9.9 0.842 142.7
20.0 0.900 159.5 0.806 -4.3 0.038 20.1 0.668 -168.0 40.0 0.899 134.0 0.254 -70.4 0.070 -1.9 0.843 138.4
EPA120AV 8V, 1/2 Idss
FREQ --- S11 --- --- S21 --- --- S12 --- --- S22 --- FREQ --- S11 --- --- S21 --- --- S12 --- --- S22 ---
(GHz) MAG ANG MAG ANG MAG ANG MAG ANG (GHz) MAG ANG MAG ANG MAG ANG MAG ANG
1.0 0.921 -97.5 14.598 125.1 0.028 40.3 0.279 -75.6 21.0 0.947 155.6 0.730 -11.5 0.030 2.4 0.716 -174.0
2.0 0.905 -134.6 8.894 102.7 0.035 23.0 0.263 -104.4 22.0 0.945 154.3 0.675 -15.4 0.030 1.1 0.738 -176.1
4.0 0.901 -160.6 4.739 81.1 0.035 10.5 0.284 -120.1 24.0 0.942 149.6 0.576 -23.2 0.030 4.1 0.785 -179.7
6.0 0.906 -175.2 3.186 66.3 0.035 6.3 0.334 -124.0 26.0 0.939 147.1 0.492 -31.5 0.030 7.2 0.817 172.9
8.0 0.912 -179.0 2.421 54.2 0.033 4.2 0.364 -133.1 28.0 0.916 139.4 0.425 -40.2 0.032 6.7 0.858 169.6
10.0 0.915 178.0 1.919 42.5 0.031 0.3 0.413 -144.1 30.0 0.905 131.1 0.370 -49.5 0.033 3.2 0.878 166.2
12.0 0.925 169.8 1.536 30.3 0.029 0.1 0.484 -149.4 32.0 0.871 128.7 0.325 -58.7 0.031 -5.4 0.924 157.1
14.0 0.933 165.1 1.244 19.7 0.027 -2.0 0.553 -156.5 34.0 0.928 128.0 0.284 -66.9 0.027 -7.7 0.878 149.3
16.0 0.943 160.9 1.019 9.9 0.026 2.3 0.618 -161.3 36.0 0.976 129.5 0.263 -72.8 0.028 -5.3 0.898 142.6
18.0 0.946 161.7 0.862 1.8 0.027 1.0 0.666 -169.4 38.0 1.002 131.8 0.252 -77.5 0.038 -24.8 0.937 136.5
20.0 0.947 158.2 0.749 -6.3 0.027 0.5 0.712 -172.2 40.0 1.001 131.2 0.240 -83.0 0.047 -52.6 0.944 135.4
Note: The data included 0.7 mils diameter Au bonding wires; 3 gate wires, 15 mils each; 3 drain wires, 20 mils each;
8 source wires, 7 mils each; no source wires for EPA120AV.
P-1dB & PAE vs. Vds
20
25
30
35
40
4 5 6 7 8
Drain-Source Voltage (V)
P-1dB (dBm)
10
20
30
40
50
PAE (%)
f = 12 GHz
Ids = 50% Idss
Pout & PAE vs. Pin
-10
0
10
20
30
40
50
-5 0 5 10 15 20
Pin (dBm)
Pout (dBm) or PAE (%)
f = 12 GHz
Vds = 8V, Ids = 50% Idss
PAE
Pout
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