550
50
156
48
100
350
50
120
95
40
D
D
G
G
Excelics
EPA120B/EPA120BV
DATA SHEET
High Efficiency Heterojunction Power FET
+29.5dBm TYPICAL OUTPUT POWER
9.0dB TYPICAL POWER GAIN FOR EPA120B AND
10.5dB FOR EPA120BV AT 18GHz
0.3 X 1200 MICRON RECESSED "MUSHROOM" GATE
Si
3
N
4
PASSIVATION
ADVANCED EPITAXIAL DOPING PROFILE
PROVIDES HIGH POWER EFFICIENCY,
LINEARITY AND RELIABILITY
EPA120BV WITH VIA HOLE SOURCE GROUNDING
Idss SORTED IN 30mA PER BIN RANGE
ELECTRICAL CHARACTERISTICS (T
a
= 25
O
C)
SYMBOLS PARAMETERS/TEST CONDITIONS
EPA120B
EPA120BV
UNIT
MIN TYP MAX
MIN
TYP
MAX
P
1dB
Output Power at 1dB Compression f=12GHz
Vds=8V, Ids=50% Idss f=18GHz
28.0 29.5
29.5
28.0
29.5
29.5
dBm
G
1dB
Gain at 1dB Compression f=12GHz
Vds=8V, Ids=50% Idss f=18GHz
10.0
11.5
9.0
11.5
13.0
10.5
dB
PAE
Gain at 1dB Compression
Vds=8V, Ids=50% Idss f=12GHz
45
46
%
Idss
Saturated Drain Current Vds=3V, Vgs=0V
220
360
500
220
360
500
mA
Gm
Transconductance Vds=3V, Vgs=0V
240
380
240
380
mS
Vp
Pinch-off Voltage Vds=3V, Ids=3.0mA
-1.0
-2.5
-1.0
-2.5
V
BVgd
Drain Breakdown Voltage Igd=1.2mA
-11
-15
-11
-15
V
BVgs
Source Breakdown Voltage Igs=1.2mA
-7
-14
-7
-14
V
Rth
Thermal Resistance (Au-Sn Eutectic Attach)
40
30
o
C/W
MAXIMUM RATINGS AT 25
O
C
SYMBOLS
PARAMETERS
EPA120B
EPA120BV
ABSOLUTE
1
CONTINUOUS
2
ABSOLUTE
1
CONTINUOUS
2
Vds
Drain-Source Voltage
12V
8V
12V
8V
Vgs
Gate-Source Voltage
-8V
-3V
-8V
-3V
Ids
Drain
Current
Idss 355mA
Idss 470mA
Igsf
Forward Gate Current
60mA
10mA
60mA
10mA
Pin
Input Power
27dBm
@ 3dB
Compression
27dBm @
3dB
Compression
Tch
Channel Temperature
175
o
C 150
o
C 175
o
C 150
o
C
Tstg
Storage Temperature
-65/175
o
C -65/150
o
C -65/175
o
C -65/150
o
C
Pt
Total
Power
Dissipation
3.4W 2.8W 4.5W 3.8W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
Chip Thickness: 75
20 microns
All Dimensions In Microns
: Via Hole
No Via Hole For EPA120B
EPA120B/EPA120BV
DATA SHEET
High Efficiency Heterojunction Power FET
EPA120B
S-PARAMETERS
EPA120B 8V, 1/2 Idss
FREQ --- S11 --- --- S21 --- --- S12 --- --- S22 ---
(GHz) MAG ANG MAG ANG MAG ANG MAG ANG
1.0 0.873 -97.8 14.614 124.8 0.030 40.1 0.245 -89.7
2.0 0.866 -133.3 8.974 103.2 0.035 27.0 0.239 -119.4
4.0 0.865 -159.6 4.841 81.9 0.038 19.8 0.258 -137.9
6.0 0.864 -170.9 3.287 67.7 0.037 21.8 0.296 -142.5
8.0 0.872 -177.9 2.476 55.8 0.037 23.5 0.344 -145.9
10.0 0.877 176.9 1.974 45.6 0.035 27.7 0.385 -149.2
12.0 0.890 171.7 1.633 35.0 0.036 30.8 0.429 -154.4
14.0 0.899 166.4 1.367 24.3 0.039 30.5 0.472 -161.9
16.0 0.901 161.5 1.148 13.5 0.041 29.9 0.519 -171.5
18.0 0.917 156.9 0.980 2.7 0.045 27.3 0.575 178.6
20.0 0.908 152.3 0.819 -7.9 0.051 26.1 0.635 169.2
22.0 0.896 149.4 0.698 -16.0 0.058 26.3 0.686 162.5
24.0 0.903 145.8 0.616 -23.4 0.069 26.7 0.734 157.7
26.0 0.886 143.8 0.552 -28.0 0.084 27.1 0.750 155.7
S-PARAMETERS
EPA120BV 8V, 1/2 Idss
Note: The data included 0.7 mils diameter Au bonding wires; 2 gate wires, 15 mils each; 2 drain wires, 20 mils each;
6 source wires, 7 mils each; no source wires for EPA120BV.
FREQ --- S11 --- --- S21 --- --- S12 --- --- S22 ---
(GHz) MAG ANG MAG ANG MAG ANG MAG ANG
1.0 0.887 -88.4 15.05
9
130.0 0.029 41.8 0.272 -73.8
2.0 0.879 -127.4 9.715 107.1 0.036 25.4 0.256 -107.7
4.0 0.887 -157.2 5.309 84.0 0.038 11.4 0.274 -129.7
6.0 0.899 -168.8 3.554 69.5 0.036 6.6 0.316 -137.2
8.0 0.905 -175.1 2.651 58.1 0.035 3.3 0.372 -140.3
10.0 0.909 -179.4 2.091 48.2 0.032 1.0 0.430 -143.1
12.0 0.913 176.6 1.726 38.2 0.030 -0.8 0.484 -147.7
14.0 0.916 171.5 1.462 27.9 0.030 -2.9 0.528 -154.0
16.0 0.925 165.2 1.263 16.8 0.030 -6.7 0.570 -162.0
18.0 0.930 157.9 1.088 4.6 0.030 -10.1 0.611 -171.8
20.0 0.939 151.1 0.936 -7.4 0.031 -14.1 0.654 178.3
FREQ --- S11 --- --- S21 --- --- S12 --- --- S22 ---
(GHz) MAG ANG MAG ANG MAG ANG MAG ANG
21.0 0.946 149.8 0.824 -11.5 0.029 -15.2 0.700 174.9
22.0 0.956 148.9 0.752 -16.0 0.030 -13.2 0.720 170.6
24.0 0.967 148.0 0.636 -24.1 0.029 -11.8 0.769 164.6
26.0 0.967 148.0 0.554 -30.0 0.029 -4.9 0.799 162.4
28.0 0.956 148.0 0.503 -34.2 0.033 0.1 0.828 161.4
30.0 0.951 146.2 0.473 -39.5 0.034 -3.5 0.850 161.0
32.0 0.937 141.5 0.443 -47.2 0.033 -11.3 0.854 158.1
34.0 0.931 134.2 0.403 -57.4 0.029 -15.4 0.858 151.4
36.0 0.949 125.4 0.363 -69.3 0.029 -29.0 0.881 140.4
38.0 0.969 117.5 0.316 -81.0 0.038 -56.8 0.910 127.9
40.0 0.981 113.5 0.284 -92.8 0.050 -85.1 0.930 119.2
P-1dB & PAE vs. Vds
24
26
28
30
32
34
36
38
40
4
5
6
7
8
Drain-Source Voltage (V)
P-
1
d
B (d
B
m
)
20
25
30
35
40
45
50
55
PA
E (%
)
f = 12 GHz
Ids = 50% Idss
Pout & PAE vs. Pin
0
10
20
30
40
50
-10
-5
0
5
10
15
20
25
Pin (dBm)
P
o
u
t
(d
Bm
) o
r
PA
E (%)
f = 12 GHz
Vds = 8V, Ids = 50% Idss
PAE
Pout
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