EPA120D
UPDATED
01/13/2006
High Efficiency Heterojunction Power FET
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 1 of 2
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
Revised January 2006
Chip Thickness: 75
20 microns
All Dimensions In Micron
s
FEATURES
+29.5dBm TYPICAL OUTPUT POWER
19.5dB TYPICAL POWER GAIN AT 2GHz
0.5 X 1200 MICRON RECESSED "MUSHROOM" GATE
Si
3
N
4
PASSIVATION AND PLATED HEAT SINK
ADVANCED EPITAXIAL DOPING PROFILE
PROVIDES HIGH POWER EFFICIENCY,
LINEARITY AND RELIABILITY
Idss SORTED IN 30mA PER BIN RANGE
ELECTRICAL CHARACTERISTICS (T
a
= 25
O
C)
Caution! ESD sensitive device.
SYMBOLS PARAMETERS/TEST
CONDITIONS MIN
TYP
MAX
UNIT
P
1dB
Output Power at 1dB Compression
f= 2GHz
Vds=8V, Ids=50% Idss
f= 4GHz
28.0 29.5
29.5
dBm
G
1dB
Gain at 1dB Compression
f= 2GHz
Vds=8V, Ids=50% Idss
f= 4GHz
18.0 19.5
14.5
dB
PAE
Power Added Efficiency at 1dB Compression
Vds=8V, Ids=50% Idss
f=2GHz
50
%
Idss
Saturated Drain Current
Vds=3V, Vgs=0V
210
360
510
mA
Gm
Transconductance Vds=3V,
Vgs=0V
240 380
mS
Vp
Pinch-off Voltage
Vds=3V,Ids=3.6mA
-1.0
-2.5
V
BVgd
Drain Breakdown Voltage
Igd=1.2mA
-13
-15
V
BVgs
Source Breakdown Voltage
Igs=1.2mA
-7
-14
V
Rth
Thermal Resistance (Au-Sn Eutectic Attach)
40
45
o
C/W
MAXIMUM RATINGS AT 25
O
C
SYMBOLS PARAMETERS
ABSOLUTE
1
CONTINUOUS
2
Vds
Drain-Source Voltage
12V 8V
Vgs
Gate-Source Voltage
-5V -3V
Igsf
Forward Gate Current
5.4 mA
1.8 mA
Igsr
Reserve Gate Current
0.9 mA
0.3 mA
Pin
Input Power
26 dBm
@ 3dB Compression
Tch
Channel Temperature
175
o
C 175
o
C
Tstg
Storage Temperature
-65/175
o
C -65/175
o
C
Pt
Total Power Dissipation
3.3 W
3.3 W
Note:
1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
EPA120D
UPDATED
01/13/2006
High Efficiency Heterojunction Power FET
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 2 of 2
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
Revised January 2006
S-PARAMETERS
8V, 1/2 Idss
FREQ
--- S11 ---
--- S21 ---
--- S12 ---
--- S22 ---
(GHz) MAG ANG MAG ANG MAG ANG MAG ANG
1 0.891
-106.9
15.439 119.2
0.029 40.8 0.290 -64.3
2 0.858 -143.2 9.009 97.3 0.034 27.9 0.219 -86.7
3 0.854 -159.9 6.233 84.9 0.036 26.8 0.207 -97.0
4 0.850 -170.6 4.775 75.1 0.037 25.2 0.212 -103.1
5 0.856 -178.8 3.800 66.3 0.039 29.6 0.228 -112.6
6 0.856 174.1 3.195 58.6 0.041 31.4 0.245 -117.0
7 0.858 168.5 2.766 51.0 0.044 34.1 0.258 -121.6
8 0.863 162.7 2.424 43.9 0.046 35.9 0.279 -127.2
9 0.870 157.6 2.140 36.7 0.048 36.0 0.298 -133.0
10 0.872 153.1 1.926 30.2 0.054 37.5 0.324 -139.4
11 0.880 148.6 1.738 23.4 0.056 38.3 0.352 -146.3
12 0.889 145.4 1.565 17.0 0.059 40.9 0.383 -152.7
13 0.890 142.4 1.412 10.7 0.065 37.4 0.413 -160.3
14 0.898 140.3 1.289 5.2 0.070 36.2 0.459 -165.7
15 0.910 138.5 1.176 0.0 0.075 38.6 0.487 -170.9
16 0.905 136.4 1.080 -5.4 0.080 36.8 0.529 -175.5
17 0.909 135.0 0.991 -9.9 0.083 36.9 0.557 -179.2
18 0.903 133.4 0.922 -14.9 0.092 35.4 0.581 177.8
19 0.901 130.8 0.874 -19.6 0.100 33.4 0.607 173.1
20 0.909 127.3 0.821 -24.3 0.109 32.7 0.614 168.7
Note:
The data included 0.7 mils diameter Au bonding wires:
1 gate wires, 20 mils each; 1 drain wires, 12 mils each; 4 source wires, 7 mils each.
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