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Электронный компонент: EPA120EV

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Excelics
EPA120E/EPA120EV
DATA SHEET
High Efficiency Heterojunction Power FET

+29.5dBm TYPICAL OUTPUT POWER

9.5dB TYPICAL POWER GAIN FOR EPA120E AND
10.5dB FOR EPA120EV AT 18GHz

0.3 X 1200 MICRON RECESSED "MUSHROOM" GATE

Si
3
N
4
PASSIVATION

ADVANCED EPITAXIAL DOPING PROFILE
PROVIDES HIGH POWER EFFICIENCY,
LINEARITY AND RELIABILITY

EPA120EV WITH VIA HOLE SOURCE GROUNDING

Idss SORTED IN 30mA PER BIN RANGE
ELECTRICAL CHARACTERISTICS (T
a
= 25
O
C)
SYMBOLS
PARAMETERS/TEST CONDITIONS
EPA120E
EPA120EV
UNIT
MIN
TYP
MAX
MIN
TYP
MAX
Output Power at 1dB Compression f=12GHz
29.5
29.5
P
1dB
Vds=8V, Ids=50% Idss f=18GHz
28.0
29.5
28.0
29.5
dBm
Gain at 1dB Compression f=12GHz
10.0
12.0
10.5
12.5
G
1dB
Vds=8V, Ids=50% Idss f=18GHz
9.5
10.5
dB
Gain at 1dB Compression
PAE
Vds=8V, Ids=50% Idss f=12GHz
45
46
%
Idss
Saturated Drain Current Vds=3V, Vgs=0V
210
360
510
210
360
510
mA
Gm
Transconductance Vds=3V, Vgs=0V
240
380
240
380
mS
Vp
Pinch-off Voltage Vds=3V, Ids=3.5mA
-1.0
-2.5
-1.0
-2.5
V
BVgd
Drain Breakdown Voltage Igd=1.2mA
-11
-15
-11
-15
V
BVgs
Source Breakdown Voltage Igs=1.2mA
-7
-14
-7
-14
V
Rth
Thermal Resistance (Au-Sn Eutectic Attach)
35
25
o
C/W

MAXIMUM RATINGS AT 25
O
C
SYMBOLS
PARAMETERS
EPA120E
EPA120EV
ABSOLUTE
1
CONTINUOUS
2
ABSOLUTE
1
CONTINUOUS
2
Vds
Drain-Source Voltage
12V
8V
12V
8V
Vgs
Gate-Source Voltage
-8V
-3V
-8V
-3V
Ids
Drain Current
Idss
405mA
Idss
Idss
Igsf
Forward Gate Current
60mA
10mA
60mA
10mA
Pin
Input Power
27dBm
@ 3dB
Compression
27dBm
@ 3dB
Compression
Tch
Channel Temperature
175
o
C
150
o
C
175
o
C
150
o
C
Tstg
Storage Temperature
-65/175
o
C
-65/150
o
C
-65/175
o
C
-65/150
o
C
Pt
Total Power Dissipation
3.9W
3.2W
5.4W
4.5W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
Chip Thickness: 75
20 microns
All Dimensions In Microns
: Via Hole
No Via Hole For EPA120E
EPA120E/EPA120EV
DATA SHEET
High Efficiency Heterojunction Power FET

EPA120E

S-PARAMETERS
EPA120E 8V, 1/2 Idss
FREQ --- S11 --- --- S21 --- --- S12 --- --- S22 --- FREQ --- S11 --- --- S21 --- --- S12 --- --- S22 ---
(GHz) MAG ANG MAG ANG MAG ANG MAG ANG (GHz) MAG ANG MAG ANG MAG ANG MAG ANG
1.0 0.898 -97.8 14.488 124.9 0.034 39.3 0.300 -95.1 21.0 0.938 162.3 0.751 -2.6 0.036 7.9 0.725 179.6
2.0 0.885 -134.7 8.805 103.0 0.041 22.6 0.313 -125.6 22.0 0.938 161.2 0.701 -6.4 0.036 6.4 0.743 177.5
4.0 0.887 -159.7 4.668 81.9 0.042 10.9 0.338 -140.7 24.0 0.939 159.3 0.622 -14.1 0.039 10.6 0.769 173.4
6.0 0.898 -168.8 3.128 68.6 0.040 8.5 0.366 -145.2 26.0 0.946 158.7 0.559 -21.2 0.041 12.6 0.783 168.3
8.0 0.904 -174.2 2.329 57.5 0.039 6.7 0.411 -148.1 28.0 0.946 158.0 0.513 -27.1 0.046 16.3 0.791 164.0
10.0 0.912 -177.2 1.842 47.7 0.037 5.6 0.458 -152.2 30.0 0.948 156.9 0.472 -33.6 0.050 11.6 0.799 158.5
12.0 0.917 -179.9 1.501 38.2 0.035 6.4 0.511 -157.7 32.0 0.955 154.5 0.430 -40.1 0.049 10.4 0.813 152.9
14.0 0.922 177.5 1.256 28.9 0.033 6.5 0.564 -163.1 34.0 0.959 151.2 0.388 -46.3 0.048 11.3 0.836 147.6
16.0 0.927 173.8 1.077 19.4 0.033 5.8 0.616 -168.7 36.0 0.967 147.5 0.348 -51.4 0.050 9.7 0.875 141.4
18.0 0.934 169.1 0.934 9.9 0.034 6.0 0.658 -173.5 38.0 0.993 143.3 0.325 -58.0 0.055 0.1 0.891 134.7
20.0 0.936 164.2 0.827 0.5 0.035 4.2 0.692 -178.4 40.0 0.994 137.0 0.312 -67.9 0.058 -21.3 0.876 130.0
EPA120EV 8V, 1/2 Idss
FREQ --- S11 --- --- S21 --- --- S12 --- --- S22 --- FREQ --- S11 --- --- S21 --- --- S12 --- --- S22 ---
(GHz) MAG ANG MAG ANG MAG ANG MAG ANG (GHz) MAG ANG MAG ANG MAG ANG MAG ANG
1.0 0.926 -100.1 13.872 123.9 0.034 39.1 0.290 -87.9 21.0 0.952 160.1 0.699 -7.0 0.031 -12.0 0.701 -175.6
2.0 0.910 -135.7 8.326 102.2 0.040 20.9 0.283 -117.5 22.0 0.959 159.1 0.647 -11.1 0.031 -11.8 0.718 -177.3
4.0 0.907 -159.8 4.431 81.8 0.042 10.1 0.305 -132.6 24.0 0.965 156.0 0.560 -18.7 0.030 -9.4 0.751 177.9
6.0 0.911 -173.3 2.988 67.4 0.040 3.9 0.355 -134.0 26.0 0.967 151.5 0.483 -26.6 0.032 -5.6 0.778 173.2
8.0 0.919 -174.7 2.273 56.1 0.040 1.7 0.381 -143.2 28.0 0.964 147.7 0.427 -34.3 0.031 -5.0 0.800 168.1
10.0 0.920 -177.4 1.805 44.9 0.037 -2.0 0.425 -152.3 30.0 0.954 143.1 0.374 -43.3 0.032 -8.5 0.811 162.5
12.0 0.927 172.0 1.449 33.1 0.034 -6.4 0.492 -153.2 32.0 0.955 139.5 0.337 -52.2 0.032 -15.8 0.820 156.1
14.0 0.937 167.1 1.175 22.7 0.032 -7.6 0.550 -158.5 34.0 0.961 136.3 0.299 -60.2 0.027 -21.0 0.831 151.4
16.0 0.945 161.8 0.967 13.4 0.030 -9.2 0.611 -160.7 36.0 0.974 135.2 0.276 -64.6 0.029 -19.6 0.867 147.5
18.0 0.953 164.4 0.825 5.4 0.030 -9.5 0.653 -169.8 38.0 0.981 134.3 0.261 -70.0 0.034 -34.5 0.876 144.0
20.0 0.951 162.0 0.725 -2.5 0.030 -11.7 0.692 -173.6 40.0 0.979 134.0 0.243 -75.5 0.044 -55.2 0.877 141.6
Note: The data included 0.7 mils diameter Au bonding wires; 4gate wires, 15 mils each; 4 drain wires, 20 mils each;
10 source wires, 7 mils each; no source wires for EPA120EV.