EPA680A/EPA680AV
UPDATED
05/02/2006
High Efficiency Heterojunction Power FET
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 1 of 3
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
Revised May 2006
Chip Thickness: 45
15 microns
:
Via Hole
No Via Hole For EPA680A
All Dimensions In Micron
s
FEATURES
+36.5dBm TYPICAL OUTPUT POWER
6.5dB TYPICAL POWER GAIN FOR EPA680A
AND 8.0dB FOR EPA680AV AT 12GHz
0.4 X 6800 MICRON RECESSED "MUSHROOM" GATE
Si
3
N
4
PASSIVATION AND PLATED HEAT SINK
ADVANCED EPITAXIAL DOPING PROFILE PROVIDES
HIGH POWER EFFICIENCY AND RELIABILITY
Idss SORTED IN 160mA PER BIN RANGE
ELECTRICAL CHARACTERISTICS (T
a
= 25
O
C)
Caution! ESD sensitive device.
EPA680A EPA680AV
SYMBOLS PARAMETERS/TEST
CONDITIONS
MIN TYP MAX MIN TYP MAX
UNIT
P
1dB
Output Power at 1dB Compression f=12GHz
Vds=8V, Ids=50% Idss
35.5 36.5 35.5 36.5 dBm
G
1dB
Gain at 1dB Compression f=12GHz
Vds=8V, Ids=50% Idss
5.5 6.5 7 8 dB
PAE
Power Added Efficiency at 1dB Compression
Vds=8V, Ids=50% Idss
f=12GHz
33 36 %
Idss
Saturated Drain Current Vds=3V, Vgs=0V
1250 2050 2690 1250 2050 2690
mA
Gm
Transconductance
Vds=3V, Vgs=0V
1360 2150
1360 2150
mS
Vp
Pinch-off Voltage Vds=3V,Ids=20mA
-1.0 -2.5 -1.0 -2.5 V
BVgd
Drain Breakdown Voltage
Igd=6.8mA
-13
-15 -13
-15 V
BVgs
Source Breakdown Voltage Igs=6.8mA
-7
-14
-7
-14
V
Rth
Thermal Resistance (Au-Sn Eutectic Attach)
6
5.5
o
C/W
MAXIMUM RATINGS AT 25
O
C
EPA680A EPA680AV
SYMBOLS PARAMETERS
ABSOLUTE
1
CONTINUOUS
2
ABSOLUTE
1
CONTINUOUS
2
Vds
Drain-Source Voltage
12V
8V
12V
8V
Vgs
Gate-Source Voltage
-5V
-3V
-5V
-3V
Igsf
Forward Gate Current
30.6 mA
10.2 mA
30.6 mA
10.2 mA
Igsr
Reserve Gate Current
-5.1 mA
-1.7 mA
-5.1 mA
-1.7 mA
Pin
Input Power
33.5 dBm
@ 3dB Compression
33.5 dBm
@ 3dB Compression
Tch
Channel Temperature
175
o
C 175
o
C 175
o
C 175
o
C
Tstg
Storage Temperature
-65/175
o
C -65/175
o
C -65/175
o
C -65/175
o
C
Pt
Total Power Dissipation
23 W
23 W
25 W
25 W
Note:
1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
D
D
D
D
G
G
G
G
60
231
1320
40
135
201
50
100
48
440
EPA680A/EPA680AV
UPDATED
05/02/2006
High Efficiency Heterojunction Power FET
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 2 of 3
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
Revised May 2006
S-PARAMETERS
EPA680A 8V, 1/2 Idss
Freq S11
S21
S12
S22
(GHz) Mag Ang Mag Ang Mag Ang Mag Ang
1 0.943 -164.0 7.210 90.7 0.009 21.7 0.681 -174.6
2 0.944 -173.1 3.626 78.2 0.011 23.5 0.697 -174.5
3 0.945 -176.8 2.393 68.8 0.011 26.1 0.711 -173.2
4 0.942 -179.5 1.770 60.1 0.013 36.0 0.727 -172.8
5 0.941 178.9 1.441 52.6 0.014 41.6 0.745 -172.3
6 0.940 176.6 1.133 44.8 0.015 45.8 0.765 -172.6
7 0.944 174.7 0.921 38.3 0.016 48.4 0.798 -172.8
8 0.944 173.0 0.761 32.0 0.015 47.5 0.817 -173.6
9 0.942 171.1 0.638 25.9 0.016 53.6 0.840 -174.0
10 0.945 169.2 0.550 20.4 0.017 54.5 0.857 -175.2
11 0.947 167.6 0.477 15.2 0.018 52.5 0.870 -175.8
12 0.946 166.5 0.422 10.5 0.020 52.9 0.885 -177.2
13 0.946
165.3
0.376 5.9 0.021 46.6 0.887
-178.3
14 0.948
165.0
0.339 1.6 0.023 53.1 0.904
-179.8
15 0.939
164.4
0.309 -2.1 0.024 47.6 0.900
179.5
16 0.945
164.5
0.285 -5.0 0.022 45.8 0.914
178.6
17 0.938
164.5
0.262 -9.1 0.024 45.2 0.920
177.4
18 0.931
164.8
0.240
-11.9 0.028 41.0 0.915
175.8
19 0.937
164.8
0.223
-14.8 0.028 40.1 0.926
175.8
20 0.931
165.3
0.211
-16.4 0.033 41.9 0.936
175.3
21 0.919
163.0
0.195
-20.6 0.036 39.0 0.948
175.1
22 0.924
161.1
0.185
-23.2 0.038 40.6 0.935
176.8
23 0.907
159.4
0.180
-26.0 0.043 35.9 0.949
175.1
24 0.908
156.4
0.173
-29.9 0.049 31.5 0.937
175.2
25 0.898
155.1
0.169
-33.5 0.056 29.0 0.944
173.6
26 0.888
152.3
0.168
-37.4 0.066 24.1 0.939
172.1
Note: The data included 0.7 mils diameter Au bonding wires: 4 gate wires, 15 mils each; 4 drain wires, 15 mils each;
10 source wires, 7 mils each.
EPA680A/EPA680AV
UPDATED
05/02/2006
High Efficiency Heterojunction Power FET
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 3 of 3
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
Revised May 2006
S-PARAMETERS
EPA680AV 8V, 1/2 Idss
Freq
S11 S21 S12 S22
(GHz) Mag Ang Mag Ang Mag Ang Mag Ang
1 0.962 -166.0 7.084 90.5 0.011 16.4 0.651 -175.5
2 0.965 -174.4 3.544 79.4 0.012 17.2 0.660 -175.8
3 0.968 -177.9 2.340 70.9 0.011 25.3 0.665 -175.1
4 0.971 180.0 1.727 62.9 0.013 32.7 0.683 -174.6
5 0.970 179.9 1.334 56.3 0.012 38.2 0.712 -176.1
6 0.974 178.3 1.089 49.5 0.013 43.4 0.733 -176.6
7 0.974 177.2 0.918 43.0 0.013 53.8 0.748 -177.4
8 0.976 175.6 0.785 37.5 0.015 55.3 0.768 -177.2
9 0.981 174.6 0.684 31.2 0.014 55.3 0.784 -178.6
10 0.978 173.2 0.598 25.1 0.013 58.5 0.808 178.6
11 0.975 171.9 0.523 20.9 0.018 62.1 0.835 178.2
12 0.984 170.5 0.463 15.4 0.016 62.8 0.853 176.4
13 0.984 170.9 0.407 10.7 0.017 59.7 0.848 174.3
14 0.980 169.1
0.349 6.4 0.019 62.2 0.860 173.8
15 0.991 169.7
0.320 3.4 0.017 58.8 0.869 172.0
16 0.973 168.6 0.281 -1.3 0.017 53.4 0.884 170.0
17 0.993 168.0 0.256 -5.1 0.017 59.0 0.888 168.5
18 0.981 167.8 0.226 -8.3 0.017 50.7 0.906 167.7
19 0.986 166.4 0.210 -11.8 0.018 51.7 0.911 166.2
20 0.989 165.4 0.196 -14.6 0.020 45.1 0.910 165.5
21 0.981 159.4 0.192 -18.9 0.022 42.2 0.920 165.7
22 0.986 159.1 0.172 -22.8 0.021 45.3 0.931 164.4
23 0.987 158.3 0.160 -25.4 0.022 50.5 0.932 162.3
24 0.988 158.7 0.142 -28.2 0.024 51.6 0.936 159.1
25 0.980 158.9 0.126 -28.7 0.022 50.1 0.911 158.1
26 0.961 159.2 0.114 -30.3 0.027 50.9 0.933 157.5
Note: The data included 0.7 mils diameter Au bonding wires: 4 gate wires, 15 mils each; 4 drain wires, 15 mils each;
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