EPA960CR-180F
ISSUED
02/06/2006
High Efficiency Heterojunction Power FET
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 1 of 2
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
Revised February 2006
FEATURES
Non-Hermetic 180mil Metal Flange Package
+38.5 dBm Typical Output Power
17.0 dB Typical Power Gain at 2GHz
0.4 x 9600 Micron Recessed "Mushroom" Gate
Si
3
N
4
Passivation
Advanced Epitaxial Heterojunction Profile
Provides Extra High Power Efficiency and
High Reliability
Caution! ESD sensitive device.
ELECTRICAL CHARACTERISTICS (T
a
= 25
C)
SYMBOL PARAMETERS/TEST
CONDITIONS
1
MIN
TYP
MAX
UNITS
37.0 38.5
P
1dB
Output Power at 1dB Compression f = 2GHz
V
DS
= 8 V, I
DS
50% I
DSS
f = 4GHz
38.5
dBm
15.5 17.0
G
1dB
Gain at 1dB Compression f = 2GHz
V
DS
= 8 V, I
DS
50% I
DSS
f = 4GHz
12.0
dB
PAE
Power Added Efficiency at 1dB Compression
V
DS
= 8 V, I
DS
50% I
DSS
f = 2GHz
50 %
I
DSS
Saturated Drain Current
V
DS
= 3 V, V
GS
= 0 V
1760
2880
3760
mA
G
M
Transconductance
V
DS
= 3 V, V
GS
= 0 V
1920
3120
mS
V
P
Pinch-off Voltage
V
DS
= 3 V, I
DS
= 28 mA
-1.0
-2.5
V
BV
GD
Drain Breakdown Voltage
I
GD
= 9.6 mA
-11
-15
V
BV
GS
Source Breakdown Voltage
I
GS
= 9.6 mA
-7
-14
V
R
TH
Thermal
Resistance
6*
o
C/W
* Overall Rth depends on case mounting.
MAXIMUM RATINGS AT 25
O
C
SYMBOLS PARAMETERS
ABSOLUTE
1
CONTINUOUS
2
Vds
Drain-Source Voltage
12V 8V
Vgs
Gate-Source Voltage
-8V -3V
Igsf
Forward Gate Current
86.4 mA
28.8 mA
Igsr
Reversed Gate Current
14.4 mA
4.8 mA
Pin
Input Power
36 dBm
@ 3dB Compression
Tch
Channel Temperature
175
o
C 175
o
C
Tstg
Storage Temperature
-65/175
o
C -65/175
o
C
Pt
Total Power Dissipation
25 W
25 W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
EPA960CR-180F
ISSUED
02/06/2006
High Efficiency Heterojunction Power FET
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 2 of 2
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
Revised February 2006
S-PARAMETERS
8V, 1/2 Idss
Freq S11 S11 S21 S21 S12 S12 S22 S22
GHz Mag Ang Mag Ang Mag Ang Mag Ang
0.5 0.973
-169.2
7.952 86.3 0.007 24.8 0.811 179.0
1.0 0.972 179.0 4.054 73.5 0.009 28.1 0.793 175.4
1.5 0.936 169.7 3.585 66.3 0.015 36.9 0.740 170.5
2.0 0.935 164.6 2.826 58.0 0.018 39.3 0.721 167.5
2.5 0.925 160.7 2.458 49.8 0.022 37.2 0.697 164.3
3.0 0.903 155.7 2.294 40.7 0.028 33.1 0.662 160.8
3.5 0.886 147.0 2.264 29.2 0.035 26.6 0.611 156.2
4.0 0.860 134.6 2.266 14.7 0.044 17.1 0.549 148.8
4.5 0.841 119.4 2.262 -1.4 0.052 4.8 0.484 137.5
5.0 0.826 103.2 2.238 -19.5 0.061 -9.0 0.442 120.4
5.5 0.813 86.7 2.189 -37.5 0.069 -23.2 0.411 101.6
6.0 0.804 69.3 2.138 -56.2 0.079 -38.6 0.397 82.6
6.5 0.802 48.9 2.082 -74.3 0.085 -53.8 0.359 65.4
7.0 0.796 26.3 2.051 -96.5 0.092 -72.4 0.364 41.8
7.5 0.816 0.7 1.903
-120.1 0.093 -91.8 0.397 13.8
8.0 0.848 -22.4 1.649 -142.9 0.086 -109.8 0.449 -15.3
8.5 0.882 -41.2 1.390 -161.8 0.081 -125.1 0.536 -38.4
9.0 0.892 -60.0 1.186 -179.4 0.072 -135.0 0.635 -49.6
9.5 0.882 -76.5 1.016 166.2 0.076 -151.1 0.653 -55.3
10.0 0.889 -94.0 0.934 151.0 0.073 -168.0 0.675 -64.0
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