On-State Current
8 Amp
FS08...D
SURFACE MOUNT SCR
These series of Silicon Controlled
R ectifier use a high performance
PNPN technology.
These parts are intended for general
purpose applications where high gate
sensitivity is required using surface
mount technology.
Dec - 02
Absolute Maximum Ratings, according to IEC publication No. 134
On-state Current
Average On-state Current
Non-repetitive On-State Current
Non-repetitive On-State Current
Fusing Current
Peak Reverse Gate Voltage
Peak Gate Current
Peak Gate Dissipation
Gate Dissipation
Operating Temperature
Storage Temperature
Soldering Temperature
I
T(RMS)
PARAMETER
CONDITIONS
Min.
Max.
Unit
DPAK
(Plastic)
Gate Trigger Current
0.5 to 15 mA
Off-State Voltage
200 V 600 V
SYMBOL
I
T(AV)
I
TSM
I
TSM
I
2
t
V
GRM
I
GM
P
GM
P
G(AV)
T
j
T
stg
T
sld
180 Conduction Angle, T
c
= 110 C
Half Cycle,
= 180 , T
C
= 110 C
Half Cycle, 60 Hz
Half Cycle, 50 Hz
t
p
= 10ms, Half Cycle
I
GR
= 10 A
20 s max.
20 s max.
20ms max.
10s max.
-40
-40
A
A
A
A
A
2
s
V
A
W
W
C
C
C
8
5
73
70
24.5
5
4
5
1
+125
+150
260
K
A
G
A
Repetitive Peak Off State
Voltage
PARAMETER
CONDITIONS
VOLTAGE
Unit
SYMBOL
V
DRM
V
RRM
R
GK
= 1 K
B
200
V
D
400
M
600
FS08...D
SURFACE MOUNT SCR
Dec - 02
FAGOR
SCR
CURRENT
CASE
VOLTAGE
SENSITIVITY
F
S
08
08
B
D
00
FORMING
TR
PACKAGING
Electrical Characteristics
Gate Trigger Current
Off-State Leakage Current
On-state Voltage
Gate Trigger Voltage
Gate Non Trigger Voltage
Holding Current
PARAMETER
CONDITIONS
SENSITIVITY
Unit
SYMBOL
I
GT
I
DRM
V
D
= 12 V
DC
, R
L
= 33
. T
j
= 25 C
mA
09
2
15
2
5
1.6
1.3
0.2
mA
A
V
V
V
MIN
MAX
MAX
MAX
MAX
MAX
MIN
50
70
MAX
/ I
RRM
V
TM
V
GT
V
GD
I
H
di / dt
R
th(j-a)
Critical Rate of Current Rise
Thermal Resistance
Junction-Amb for DC
C/W
V
D
= V
DRM
,
T
j
= 125 C
T
j
= 25 C
V
R
= V
RRM
,
at I
T
= 16 Amp, tp = 380 s, T
j
= 25 C
I
T
= 100 mA
, Gate open
Tr
100 ns, F = 60 Hz,
T
j
= 125 C
V
D
= 12 V
DC
, R
L
= 33
, T
j
= 25 C
V
D
= V
DRM
, R
L
= 3.3K
,
T
j
= 125 C
mA
MIN
A/s
R
d
T
j
= 125 C
R
d
Dynamic resistance
MAX
46
m
08
0.5
5
40
25
MAX
I
L
mA
50
30
Latching Current
I
G
= 1.2 I
GT
V/s
dv / dt
Critical Rate of Voltage Rise
V
D
= 0.67 x V
DRM
, Gate open
MIN
150
50
20
R
th(j-c)
Thermal Resistance
Junction-Case for DC
C/W
V
t0
T
j
= 125 C
Threshold Voltage
MAX
0.85
V
T
j
= 25 C
I
G
= 2 x I
GT
S = Cooper surface under tab
S = 0.5 cm
2
Dec - 02
Fig. 1: Maximum average power dissipation
versus average on-state current.
FS08...D
SURFACE MOUNT SCR
0
2
10
8
6
4
2
0
4
6
P (W)
IT(av)(A)
1
3
5
7
1.0
K = [Zth(j-c) / Rth (j-c)]
Fig. 3: Relative variation of thermal impedance
junction to case versus pulse duration.
1E-3
1E-2
1E-1
1E+0
tp (s)
0.5
0.2
0.1
360
Fig. 2: Average and D.C. on-state current
versus case temperature.
I T(av) (A)
T case (C)
10
8
6
4
2
0
0
25
50
75
100
125
= 180
D.C.
IGT, IH (Tj) / IGT, IH (Tj = 25 C)
Fig. 4: Relative variation of gate trigger
current, holding and latching current versus
junction temperature.
Tj (C)
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-40 -20
20
60
80 100
0
40
120 140
IGT
IH & IL
1
10
100
1000
Fig. 5: Non repetitive surge peak on-state
current versus number of cycles.
80
70
60
50
40
30
20
10
0
I TSM (A)
Number of
cycles
Tj initial = 25 C
F = 50 Hz
300
1
10
ITSM(A). I
2
t (A
2
s)
Fig. 6: Non repetitive surge peak on-state
current for a sinusoidal pulse with width:
tp < 10 ms, and corresponding value of I
2
t.
tp(ms)
2
5
100
10
ITSM
20
50
I
2
t
Tj initial = 25 C
Dec - 02
FS08...D
SURFACE MOUNT SCR
PACKAGE MECHANICAL DATA
DPAK TO 252-AA
A
A1
b
c
c1
c2
D
D1
E
E1
e
H
L
L1
L2
L3
L4
REF.
DIMENSIONS
Milimeters
Min.
Nominal
Max.
2.18
0
0.64
0.46
0.46
5.97
5.21
6.35
5.20
9.40
1.40
2.55
0.46
0.89
0.64
2.30.18
0.12
0.750.1
0.80.013
6.10.1
6.580.14
5.360.1
2.28BSC
9.900.15
2.60.05
0.50.013
1.200.05
0.830.1
2.39
0.127
0.89
0.61
0.56
6.22
5.52
6.73
5.46
10.41
1.78
2.74
0.58
1.27
1.02
Marking: type number
Weight: 0.2 g
8
2
E
L3
D
b
e
4.57 Typ.
1x0.15
H
1.6
L4
A
c2
8
2
8
2
8
2
8
2
L
L2
A1
1.067
0.013
E1
D1
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5
Fig. 8: On-state characteristics (maximum
values).
ITM(A)
4.0
100.0
VTM(V)
4.5
10.0
1.0
0.1
5.0
Tj = Tj max.
Tj = 25 C
Tj max
Vto = 0.85 V
Rt = 46 m
FOOT PRINT
6.7
6.7
3
1.6
2.3
2.3
1.6
3
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