On-State Current
16 Amp
FS16...H
STANDARD SCR
These series of Silicon Controlled
R ectifier use a high performance
PNPN technology.
These parts are intended for general
purpose high current applications where
moderate gate insensitivity is required.
Dec - 02
Absolute Maximum Ratings, according to IEC publication No. 134
On-state Current
Average On-state Current
Non-repetitive On-State Current
Non-repetitive On-State Current
Fusing Current
Peak Reverse Gate Voltage
Peak Gate Current
Peak Gate Dissipation
Gate Dissipation
Operating Temperature
Storage Temperature
Soldering Temperature
I
T(RMS)
PARAMETER
CONDITIONS
Min.
Max.
Unit
Gate Trigger Current
> 2 mA to < 40 mA
Off-State Voltage
200 V 600 V
SYMBOL
I
T(AV)
I
TSM
I
TSM
I
2
t
V
GRM
I
GM
P
GM
P
G(AV)
T
j
T
stg
T
sld
180 Conduction Angle, T
c
= 110 C
Half Cycle,
= 180 , T
C
= 110 C
Half Cycle, 60 Hz
Half Cycle, 50 Hz
t
p
= 10ms, Half Cycle
I
GR
= 10 A
20 s max.
20 s max.
20ms max.
10s max.
-40
-40
A
A
A
A
A
2
s
V
A
W
W
C
C
C
16
10
200
190
180
5
4
10
1
+125
+150
260
TO220-AB
K
A
G
Repetitive Peak Off State
Voltage
PARAMETER
CONDITIONS
VOLTAGE
Unit
SYMBOL
V
DRM
V
RRM
R
GK
= 1 K
B
200
V
D
400
M
600
FS16...H
STANDARD SCR
Dec - 02
Electrical Characteristics
Gate Trigger Current
Off-State Leakage Current
On-state Voltage
Gate Trigger Voltage
Gate Non Trigger Voltage
Holding Current
PARAMETER
CONDITIONS
SENSITIVITY
Unit
SYMBOL
I
GT
I
DRM
V
D
= 12 V
DC
, R
L
= 33
. T
j
= 25 C
mA
10
2
25
2
5
1.6
1.3
0.2
mA
A
V
V
V
MIN
MAX
MAX
MAX
MAX
MAX
MIN
50
60
MAX
/ I
RRM
V
TM
V
GT
V
GD
I
H
di / dt
R
th(j-a)
Critical Rate of Current Rise
Thermal Resistance
Junction-Amb
C/W
V
D
= V
DRM
, R
GK
= 220
T
j
= 125 C
T
j
= 25 C
V
R
= V
RRM
,
at I
T
= 32 Amp, tp = 380 s, T
j
= 25 C
I
T
= 500 mA
, Gate open,
PART NUMBER INFORMATION
V
D
= 12 V
DC
, R
L
= 33
, T
j
= 25 C
V
D
= V
DRM
, R
L
= 3.3K
T
j
= 125 C
mA
MIN
A/s
FAGOR
SCR
CURRENT
CASE
VOLTAGE
SENSITIVITY
F
S
16
10
B
H
00
FORMING
TU
PACKAGING
R
d
T
j
= 125 C
R
d
Dynamic resistance
MAX
23
m
14
4
40
40
MAX
I
L
mA
60
Latching Current
I
G
= 1.2 I
GT
V/s
dv / dt
Critical Rate of Voltage Rise
V
D
= 0.67 x V
DRM
, Gate open
MIN
500
1.1
R
th(j-c)
Thermal Resistance
Junction-Case for DC
C/W
V
t0
T
j
= 125 C
Threshold Voltage
MAX
0.77
V
Tr
100 ns, F = 60 Hz,
T
j
= 125 C
I
G
= 2 x I
GT
T
j
= 25 C
T
j
= 125 C
50
90
1000
Dec - 02
FS16...H
STANDARD SCR
1.0
K = [Zth(j-c) / Rth (j-c)]
Fig. 3: Relative variation of thermal impedance
junction to case versus pulse duration.
1E-3
1E-2
1E-1
1E+0
tp (s)
0.5
0.2
0.1
IT(av)(A)
Fig. 1: Maximum average power dissipation
versus average on-state current.
0
25
50
75
100
125
Fig. 2: Average and D.C. on-state current
versus case temperature.
P (W)
Tc (C)
IT(av)(A)
0
2
4
6
8
0
2
4
6
8
10
12
14
16
0
4
8
12
16
1
3
5
7
9
2
6
10
14
18
10
IGT, IH, IL (Tj) / IGR, IH, IL (Tj = 25 C)
Fig. 4: Relative variation of gate trigger
current , holding current and latching
current versus junction temperature.
Tj (C)
2.5
2.0
1.5
1.0
0.5
0.0
-40 -20
20
60
80 100
0
40
120 140
IGT
1
10
100
1000
Fig. 5: Surge peak on-state current versus
number of cycles.
200
150
100
50
0
I TSM (A)
Number of cycles
1000
ITSM(A). I
2
t (A
2
s)
Fig. 7: Non repetitive surge peak on-state
current for a sinusoidal pulse with width:
tp < 10 ms, and corresponding value of I
2
t.
tp(ms)
100
10
ITSM
I
2
t
Tj initial = 25 C
1
10
IH & IL
Dec - 02
FS16...H
STANDARD SCR
PACKAGE MECHANICAL DATA
TO-220AB
A
a1
a2
B
b1
b2
C
c1
c2
e
F
I
I4
L
I2
I3
M
REF.
DIMENSIONS
Milimeters
Min.
Nominal
Max.
15.20
13.00
10.00
0.61
1.23
4.40
0.49
2.40
2.40
6.20
3.75
15.80
2.65
1.14
1.14
3.75
16.40
2.60
15.90
14.00
10.40
0.88
1.32
4.60
0.70
2.72
2.70
6.60
3.85
16.80
2.95
1.70
1.70
14
a1
L
A
e
a2
b1
12
13
I
B
c
F
b2
c2
c1
M
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5
Fig. 8: On-state characteristics (maximum
values).
ITM(A)
4.0
1000
VTM(V)
4.5
100
10
1
5.0
Tj = 25 C
Tj = Tj max.
Tj max
Vto = 0.77 V
Rt = 23 m
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