2002 Fairchild Semiconductor Corporation
Rev. A2, September 2002
KSC181
5
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25
C unless otherwise noted
Electrical Characteristics
T
a
=25
C unless otherwise noted
h
FE
Classification
Symbol
Parameter
Value
Units
V
CBO
Collector-Base Voltage
60
V
V
CEO
Collector-Emitter Voltage
50
V
V
EBO
Emitter-Base Voltage
5
V
I
C
Collector Current
150
mA
I
B
Base Current
50
mA
P
C
Collector Power Dissipation
400
mW
T
J
Junction Temperature
125
C
T
STG
Storage Temperature
-55 ~ 150
C
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
I
CBO
Collector Cut-off Current
V
CB
=60V, I
E
=0
0.1
A
I
EBO
Emitter Cut-off Current
V
EB
=5V, I
C
=0
0.1
A
h
FE1
h
FE2
DC Current Gain
V
CE
=6V, I
C
=2mA
V
CE
=6V, I
C
=150mA
70
25
700
V
CE
(sat)
Collector-Emitter Saturation Voltage
I
C
=100mA, I
B
=10mA
0.1
0.25
V
V
BE
(sat)
Base-Emitter Saturation Voltage
I
C
=100mA, I
B
=10mA
1.0
V
f
T
Current Gain Bandwidth Product
V
CE
=10V, I
C
=1mA
80
MHz
C
ob
Output Capacitance
V
CB
=10V, I
E
=0,
f=1MHz
2.0
3.0
pF
NF
Noise Figure
V
CE
=6V, I
C
=0.1mA
R
S
=10k
,
f=1Hz
1.0
1.0
dB
Classification O
Y
GR
L
h
FE1
70 ~ 140
120 ~ 240
200 ~ 400
350 ~ 700
KSC1815
Audio Frequency Amplifier & High
Frequency OSC
Complement to KSA1015
Collector-Base Voltage : V
CBO
= 50V
1. Emitter 2. Collector 3. Base
TO-92
1
2002 Fairchild Semiconductor Corporation
KSC181
5
Rev. A2, September 2002
Typical Characteristics
Figure 1. Static Characteristic
Figure 2. Transfer Characteristic
Figure 3. DC current Gain
Figure 4. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 5. Output Capacitance
Figure 6. Current Gain Bandwidth Product
0
4
8
12
16
20
0
20
40
60
80
100
I
B
= 400
A
I
B
= 350
A
I
B
= 300
A
I
B
= 250
A
I
B
= 200
A
I
B
= 150
A
I
B
= 100
A
I
B
= 50
A
I
C
[
m
A
]
,
CO
L
L
E
C
T
O
R C
U
R
R
E
NT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0.1
1
10
100
V
CE
=6V
I
C
[m
A
], C
O
L
L
E
C
T
O
R C
URR
E
N
T
V
BE
[V], BASE-EMITTER VOLTAGE
1
10
100
1000
10
1000
V
CE
= 6V
h
FE
, DC
CUR
RENT
G
A
IN
I
C
[mA], COLLECTOR CURRENT
1
10
100
1000
10
100
1000
10000
I
C
=10I
B
V
CE
(sat)
V
BE
(sat)
V
BE
(s
a
t
), V
CE
(
s
a
t
)
[
m
V
]
,
SATURATI
O
N
VO
L
T
AG
E
I
C
[mA], COLLECTOR CURRENT
1
10
100
1000
1
10
100
f=1MHz
I
E
=0
C
ob
[p
F
], C
APAC
IT
AN
C
E
V
CB
[V], COLLECTOR-BASE VOLTAGE
0.1
1
10
100
1
10
100
1000
V
CE
=6V
f
T
[MH
z
],
CU
RRE
N
T
G
A
IN
-B
A
N
D
W
IDT
H
P
R
O
D
UCT
I
C
[mA], COLLECTOR CURRENT
2002 Fairchild Semiconductor Corporation
Rev. I1
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intended to be an exhaustive list of all such trademarks.
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PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
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CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
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Advance Information
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This datasheet contains the design specifications for
product development. Specifications may change in
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